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Applied Sciences
Volume 13
Issue 6
10.3390/app13063388
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Communication
Peer-Review Record

Analysis of Channel Potential Recovery According to the Back Pattern in 3D NAND Flash Memory

Appl. Sci. 2023, 13(6), 3388; https://doi.org/10.3390/app13063388
by Gyunseok Ryu, Hyunju Kim, Jihwan Lee and Myounggon Kang *
Reviewer 2: Anonymous
Reviewer 3: Anonymous
Appl. Sci. 2023, 13(6), 3388; https://doi.org/10.3390/app13063388
Submission received: 27 January 2023 / Revised: 21 February 2023 / Accepted: 23 February 2023 / Published: 7 March 2023
(This article belongs to the Section Materials Science and Engineering)

Round 1

Reviewer 1 Report

The authors investigated the recovery of channel potential according to the program states of adjacent cells. The work is good and can be accepted after minor revisions.

1. The methodology as well as the numerical method are not well designed.

2. The author should provide a comparative table where the novelty of their work compared to the others should be presented.

3. The perspective of a future work has to be considered in the conclusion.

 

4- Careful reading of manuscript is needed for correction of typos

Author Response

Please see the attachment

Author Response File: Author Response.docx

Reviewer 2 Report

Please see the file.

Comments for author File: Comments.pdf

Author Response

Please see the attachment

Author Response File: Author Response.docx

Reviewer 3 Report

The paper deals with the reduced channel potential caused by the down-coupling phenomenon in 3D flash memories and the recovery from it, depending on the setting of the write lines.

The structure of the article corresponds to what is expected from a scientific paper. Its length is shorter than usual, but this does not affect the quality of the paper, which is of a high standard. The language, wording and Englishness of the article is fine. (Perhaps the seven "NAND flash memory" in the first paragraph of the introduction could be less.)

The figures in the article are good, contain the necessary information and are understandable.

The introduction, like the rest of the article, is concise but covers the necessary literature. 

The second section presents the 3D NAND structure under consideration to the extent necessary for understanding.

Section 3 summarizes the results of the study.

The paper contains no substantial errors and I recommend its publication unchanged.

Author Response

Please see the attachment

Author Response File: Author Response.docx

Round 2

Reviewer 2 Report

Authors have incorporated the suggestions in the revised manuscript.

The paper may be published In Applied Sciences Journal.

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