An Operation Guide of Si-MOS Quantum Dots for Spin Qubits
, Rong-Long Ma 1,2,†, Ming Ni 1,2, Xin Zhang 1,2, Yuan Zhou 1,2, Ke Wang 1,2, Gang Luo 1,2, Gang Cao 1,2, Zhen-Zhen Kong 3, Gui-Lei Wang 3,*, Hai-Ou Li 1,2,* and Guo-Ping Guo 1,2,4Round 1
Reviewer 1 Report
The article by Rui-Zi Hu, Rong-Long Ma and coworkers gives a detailed guide on making and measuring single electron transistors (SETs) which is highly enlightening and well written. There are a few minor typographical errors:
- Line 3: "long-rang" -> "long-range"
- Figure 3 caption: "vlotage" -> "voltage"
- Line 220: "method" -> "methods"
I have no other major reservations about the paper and would support publication of the article with the minor spelling changes as noted.
Author Response
Please see the attachment.
Author Response File: 
Author Response.pdf
Reviewer 2 Report
In this article the authors traced a line guide for SI-MOF quantum dots for spin qubits, mainly by showing the basic properties and the commonly method for spin-to-charge conversion. I found the paper pretty complete and it would be a reference for scientific community involved in this topic. I would recommend acceptance after minor revisions:
Line 140: “the forth line decreases” or should be "increases"?
The tendency in Figure 4 are not completely explained or at least correlated with the level arms. Further discussion is needed
From Figure 5d is not clear how t off and t on are extrapolated. Maybe the author want to explain this step.
Author Response
Please see the attachment.
Author Response File: Author Response.pdf
