Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering Technique
Abstract
:1. Introduction
2. Device Structure and Fabrication Process
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Passivation Scheme | Stress-Free SiNx Passivation | Compressive SiNx Passivation | |
---|---|---|---|
First-layer SiNx passivation | 10 nm high-frequency SiNx protective layer (tLF/20 = 0) | ||
Second-layer SiNx passivation | Thickness | 180 nm | 180 nm |
LF duty cycle | tLF/20 = 45% | tLF/20 = 95% |
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Deng, C.; Wang, P.; Tang, C.; Hu, Q.; Du, F.; Jiang, Y.; Zhang, Y.; Li, M.; Xiong, Z.; Wang, X.; et al. Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering Technique. Nanomaterials 2024, 14, 1471. https://doi.org/10.3390/nano14181471
Deng C, Wang P, Tang C, Hu Q, Du F, Jiang Y, Zhang Y, Li M, Xiong Z, Wang X, et al. Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering Technique. Nanomaterials. 2024; 14(18):1471. https://doi.org/10.3390/nano14181471
Chicago/Turabian StyleDeng, Chenkai, Peiran Wang, Chuying Tang, Qiaoyu Hu, Fangzhou Du, Yang Jiang, Yi Zhang, Mujun Li, Zilong Xiong, Xiaohui Wang, and et al. 2024. "Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering Technique" Nanomaterials 14, no. 18: 1471. https://doi.org/10.3390/nano14181471