Radiation Effects in Carbon Nanoelectronics
Abstract
:1. Introduction
2. Experimental Section
2.1. Back-Gated Device Structures
2.2. SiO2 Local Etching
2.3. Si3N4 Plasma Enhanced Chemical Vapor Deposition (PECVD)
2.4. Al2O3 Atomic Layer Deposition (ALD)
3. Results and Discussion
3.1. Characterizing Air Sensitivity of Carbon Electronics
3.2. SiON and Al2O3 Gate Dielectrics with the Locally Etched Back-Gated Structure (SWCNT-TFTs)
4. Conclusions
Acknowledgments
References
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Cress, C.D.; McMorrow, J.J.; Robinson, J.T.; Landi, B.J.; Hubbard, S.M.; Messenger, S.R. Radiation Effects in Carbon Nanoelectronics. Electronics 2012, 1, 23-31. https://doi.org/10.3390/electronics1010023
Cress CD, McMorrow JJ, Robinson JT, Landi BJ, Hubbard SM, Messenger SR. Radiation Effects in Carbon Nanoelectronics. Electronics. 2012; 1(1):23-31. https://doi.org/10.3390/electronics1010023
Chicago/Turabian StyleCress, Cory D., Julian J. McMorrow, Jeremy T. Robinson, Brian J. Landi, Seth M. Hubbard, and Scott R. Messenger. 2012. "Radiation Effects in Carbon Nanoelectronics" Electronics 1, no. 1: 23-31. https://doi.org/10.3390/electronics1010023