Article Versions Notes

Cui T, Zhu L, Chen D, Fan Y, Liu J, Li X. Independent Effects of Dopant, Oxygen Vacancy, and Specific Surface Area on Crystal Phase of HfO₂ Thin Films towards General Parameters to Engineer the Ferroelectricity. Electronics. 2022; 11(15):2369. https://doi.org/10.3390/electronics11152369

Cui, Tianning, Liping Zhu, Danyang Chen, Yuyan Fan, Jingquan Liu, and Xiuyan Li. 2022. "Independent Effects of Dopant, Oxygen Vacancy, and Specific Surface Area on Crystal Phase of HfO₂ Thin Films towards General Parameters to Engineer the Ferroelectricity" Electronics 11, no. 15: 2369. https://doi.org/10.3390/electronics11152369

Cui, T., Zhu, L., Chen, D., Fan, Y., Liu, J., & Li, X. (2022). Independent Effects of Dopant, Oxygen Vacancy, and Specific Surface Area on Crystal Phase of HfO₂ Thin Films towards General Parameters to Engineer the Ferroelectricity. Electronics, 11(15), 2369. https://doi.org/10.3390/electronics11152369