Next Article in Journal
InAlGaN/GaN HEMTs at Cryogenic Temperatures
Previous Article in Journal
Understanding the Performance of Low Power Raspberry Pi Cloud for Big Data
Previous Article in Special Issue
Graphene and Two-Dimensional Materials for Optoelectronic Applications
 
 
Font Type:
Arial Georgia Verdana
Font Size:
Aa Aa Aa
Line Spacing:
Column Width:
Background:
Editorial

Two-Dimensional Electronics — Prospects and Challenges

Institut für Mikro- und Nanoelektronik, Technische Universität Ilmenau, PF 100565, 98684 Ilmenau, Germany
Electronics 2016, 5(2), 30; https://doi.org/10.3390/electronics5020030
Submission received: 2 June 2016 / Accepted: 2 June 2016 / Published: 7 June 2016
(This article belongs to the Special Issue Two-Dimensional Electronics - Prospects and Challenges)

1. Introduction

For about a decade, 2D (two-dimensional) materials have represented one of the hottest directions in solid-state research. The rise of 2D materials began in 2004, when the Novoselov–Geim group from the University of Manchester and the group of Berger and de Heer from Georgia Tech published their pioneering papers on graphene, a 2D material consisting of a single layer of carbon atoms arranged in a honeycomb lattice [1,2]. Since graphene shows outstanding properties, e.g., very high carrier mobilities, excellent heat conductivity, and superior mechanical strength, researchers from various communities including physicists, chemists, material scientists, electronics engineers, etc., became fascinated by this new material. An impression on the unabatedly strong interest in graphene can be obtained by counting the papers listed in the database Web of Science [3] under the search term “graphene”. For 2004, one finds 183 entries compared to over 7000 for 2010 and more than 34,300 for the year 2015, which exceeds the number for 2014 by more than 5000.

2. From Graphene to Beyond Graphene

Many of the early papers on graphene envisaged its use in electronics as most promising [2,4]. This has spurred expectations that graphene could become the perfect material for transistors and possibly replace the conventional semiconductors. Consequently, many groups worldwide started working on graphene transistors, and the first graphene MOSFET (metal-semiconductor field-effect transistor) was demonstrated in 2007 by Lemme [5], one of the authors of the present Special Issue, and integrated graphene circuits have been successfully fabricated [6]. Meanwhile, however, the prospects for graphene for electronic applications, in particular for transistors, are assessed less optimistically. The main problem is that graphene does not possess a bandgap. As a consequence, graphene MOSFETs cannot be switched off (note that switch-off is mandatory for transistors to be used in digital logic) and their RF (radio frequency) performance is degraded [7,8]. However, research on graphene transistors is still underway, and the use of graphene transistors for specific applications is still on the agenda.
Possibly even more important than the work on graphene transistors is the fact that the advances in graphene research have motivated scientists to extend their work to 2D materials beyond graphene. A milestone in this direction was the demonstration of the first MOSFETs with single-layer MoS2 channels by the Kis group in 2011 [9]. Meanwhile, hundreds of 2D materials beyond graphene have been discovered—many of them possess sizeable bandgaps and, therefore, are potentially useful for electronics [10,11,12,13]. This has led to intensive research on the application of 2D materials beyond graphene in the More Moore domain of semiconductor electronics, i.e., digital complementary MOS, and in the More Than Moore domain.

3. The Present Special Issue

This Special Issue comprises a total of 12 papers (four review papers and eight contributed articles) and spans a wide range of topics, which extend from first principle band structure calculations [14] and molecular dynamics simulations of the thermal properties [15] of 2D materials, over numerical simulations and compact modeling of 2D transistors [16,17,18] and other 2D devices [19,20], 2D material growth [21,22] and processing issues [22,23,24], up to experimental 2D devices and their applications [22,23,25]. Regarding the materials, the papers of the Special Issue deal with graphene and graphene nanoribbons [16,17,18,19,20,22,23,25], TMDs (transition metal dichalcogenide) [14,21,22,24,25], phosphorene, which frequently is called 2D black phosphorus [24,25], and 2D metal oxides [25]. Finally, the papers discuss More Moore electronics and transistors [16,17,18], as well as applications belonging to the More Than Moore domain of semiconductor electronics, including optoelectronics [22], RF electronics [16,23], sensors [20,25], and field emitters [19].
Li and Östling provide an excellent overview of the status of 2D material synthesis [21] and put special emphasis on the scalability of the discussed techniques and the attainable 2D material quality. Yogeesh and coauthors review their recent progress on flexible graphene devices and demonstrate a flexible graphene-based radio frequency receiver operating at 2.4 GHz [23]. Bablich, Kataria, and Lemme present a thorough overview on the application of 2D materials in optoelectronics [22], and, in the last review paper, Varghese and coauthors comprehensively discuss the use of 2D materials for gas sensors [25].
Kuc and Heine investigate the stability and electronic structure of monolayer TMD alloys [14]. Khan and coauthors study the thermal conductivity of graphene nanoribbons using molecular dynamics simulations [15]. Rubio-Bollinger and coworkers experimentally investigate the visibility of exfoliated TMD and black phosphorus flakes on different substrates, and show that, compared to the most frequently used SiO2/Si substrates, Si3N4 on Si provides a significantly increased optical contrast, which makes the identification of 2D flakes much easier [24].
The next three papers are devoted to the simulation of advanced graphene-based transistors. Banadaki and Srivastava investigate the effects of band-to-band tunneling and edge roughness on the behavior of graphene nanoribbon MOSFETs [18]. Nanmeni Bondja and coworkers study the steady-state and RF performance of graphene nanoribbon transistors by numerical device simulations [16]. Finally, in the third transistor paper, Fregonese and coauthors describe a compact modeling approach for a novel graphene-based transistor type called graphene base transistor [17]. Finally, two papers discuss several aspects of the application of graphene in non-transistor devices. Natsuki analyzes graphene nanomechanical mass sensors [20] and Fursey and coworkers discuss graphene-based field emitters [19].

4. Outlook

Compared to conventional semiconductors, such as Si and III-V compounds, the group of the 2D materials is still in its infancy, and many problems have still to be solved for these materials to be used in commercial electronic devices and circuits. This makes it currently difficult to identify the most promising applications for 2D materials. On the other hand, within only a few years, substantial progress has been achieved. This makes me confident that 2D materials will find their applications, in particular, given the fact that electronics comprise much more than transistors. A few examples are given below.
Two-dimensional materials are bendable and, therefore, ideally suited for the emerging field of flexible transistors and circuits [26]. Applications for the 2D materials beyond transistors are, for example, touch screens and batteries. In November 2013, the Chinese smartphone maker AWIT announced the shipment of 2000 AT26 equipped with a graphene touch screen [27] and in March 2015, a consortium of two Chinese companies, the graphene maker Moxi and the tablet maker Galapad, announced the shipment of 30,000 of the Android Settler α smartphones, which use graphene for the screen, battery, and heat conduction [28]. Additionally, Samsung, one of the big players in the smartphone business, is working intensively on the application of graphene in mobile phones.
Research on 2D materials, both graphene and beyond graphene, will remain an exciting field for many years to come. According to Kroemer’s Lemma of New Technology [29], which reads as “The principal applications of any sufficiently new and innovative technology always have been—and will continue to be—applications created by that technology”, we should be prepared to see a great many of new applications for 2D materials, which, at least in part, have not yet been envisaged.

Acknowledgments

First of all, I would like to thank all authors of this Special Issue for their excellent contributions. I also would like to thank the reviewers who spent a lot of time in the reviewing process and who made extremely valuable suggestions to improve the quality of the submitted papers. I am very grateful to Mostafa Bassiouni, the Editor-in-Chief, for giving me the opportunity to Guest-Edit the Special Issue, for his continuous encouragement and support, and for his patience when I missed deadlines. I also would like to thank the staff of the Editorial Office of Electronics for the pleasant collaboration. Finally, I acknowledge financial support of my own work on 2D materials by Technische Universität Ilmenau in the frame of several Excellence Research Grants and by DFG under contract number SCHW 729/16-1.

Conflicts of Interest

The authors declare no conflict of interest.

References

  1. Novoselov, K.S.; Geim, A.K.; Morozov, S.V.; Jiang, D.; Zhang, Y.; Dubonos, S.V.; Grigorieva, I.V.; Firsov, A. Electric field effect in atomically thin carbon films. Science 2004, 306, 666–669. [Google Scholar] [CrossRef] [PubMed]
  2. Berger, C.; Song, Z.; Li, T.; Li, X.; Ogbazghi, A.Y.; Feng, R.; Dai, Z.; Marchenkov, A.N.; Conrad, E.H.; First, P.N.; et al. Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics. J. Phys. Chem. B 2004, 108, 19912–19916. [Google Scholar] [CrossRef]
  3. Web of Science. Available online: http://apps.webofknowledge.com/ (accessed on 2 June 2016).
  4. Geim, A.K.; Novoselov, K.S. The rise of graphene. Nat. Mater. 2007, 6, 183–191. [Google Scholar] [CrossRef] [PubMed]
  5. Lemme, M.C.; Echtermeyer, T.J.; Baus, M.; Kurz, H. A graphene field-effect device. IEEE Electron Device Lett. 2007, 28, 282–284. [Google Scholar] [CrossRef]
  6. Han, S.-J.; Valdes-Garcia, A.; Bol, A.A.; Franklin, A.D.; Farmer, D.; Kratschmer, E.; Jenkins, K.A.; Haensch, W. Graphene technology with inverted-T gate and RF passives on 200 mm platform. Tech. Dig. IEDM 2011, 19–22. [Google Scholar]
  7. Schwierz, F. Graphene Transistors: Status, Prospects, and Problems. Proc. IEEE 2013, 101, 1567–1584. [Google Scholar] [CrossRef]
  8. Lemme, M.C.; Li, L.; Palacios, T.; Schwierz, F. Two-dimensional materials for electronic applications. MRS Bull. 2014, 39, 711–718. [Google Scholar] [CrossRef]
  9. Radisavljevic, B.; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 2011, 6, 147–150. [Google Scholar] [CrossRef] [PubMed]
  10. Wang, Q.H.; Kalantar-Zadeh, K.; Kis, A.; Coleman, J.N.; Strano, M.S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 2012, 7, 699–712. [Google Scholar] [CrossRef] [PubMed]
  11. Butler, S.Z.; Hollen, S.M.; Cao, L.; Gupta, J.A.; Gutierrez, H.R.; Heinz, T.F.; Hong, S.S.; Huang, J.; Ismach, A.F.; Johnston-Halperin, E.; et al. Progress, challenges, and opportunities in two-dimensional materials beyond graphene. ACS Nano 2013, 7, 2898–2926. [Google Scholar] [CrossRef] [PubMed]
  12. Miro, P.; Audiffred, M.; Heine, T. An atlas of two-dimensional materials. Chem. Soc. Rev. 2014, 43, 6537–6554. [Google Scholar] [CrossRef] [PubMed]
  13. Schwierz, F.; Pezoldt, J.; Granzner, R. Two-dimensional materials and their prospects in transistor electronics. Nanoscale 2015, 7, 8261–8283. [Google Scholar] [CrossRef] [PubMed]
  14. Kuc, A.; Heine, T. On the stability and electronic structure of transition-metal dichalcogenide monolayer alloys Mo1-xXxS2-ySey with X = W, Nb. Electronics 2016, 5, 1. [Google Scholar] [CrossRef]
  15. Khan, A.I.; Navid, I.A.; Noshin, M.; Uddin, H.M.A.; Hossain, F.F.; Subrina, S. Equilibrium molecular dynamics (MD) simulation study of thermal conductivity of graphene nanoribbon: A comparative study on MD potentials. Electronics 2015, 4, 1109–1124. [Google Scholar] [CrossRef]
  16. Nanmeni Bondja, C.; Geng, Z.; Granzner, R.; Pezoldt, J.; Schwierz, F. Simulation of 50-nm gate graphene nanoribbon transistors. Electronics 2016, 5, 3. [Google Scholar] [CrossRef]
  17. Frégonèse, S.; Venica, S.; Driussi, F.; Zimmer, T. Electrical compact modeling of graphene base transistors. Electronics 2015, 4, 969–978. [Google Scholar] [CrossRef]
  18. Banadaki, Y.M.; Srivastava, A. Effect of edge roughness on static characteristics of graphene nanoribbon field effect transistor. Electronics 2016, 5, 11. [Google Scholar] [CrossRef]
  19. Fursey, G.; Konorov, P.; Yafyasov, A. Dimensional quantization and the resonance concept of the low-threshold field emission. Electronics 2015, 4, 1101–1108. [Google Scholar] [CrossRef]
  20. Natsuki, T. Theoretical analysis of vibration frequency of graphene sheets used as nanomechanical mass sensor. Electronics 2015, 4, 723–738. [Google Scholar] [CrossRef]
  21. Li, J.; Östling, M. Scalable fabrication of 2D semiconducting crystals for future electronics. Electronics 2015, 4, 1033–1061. [Google Scholar] [CrossRef]
  22. Bablich, A.; Kataria, S.; Lemme, M.C. Graphene and two-dimensional materials for optoelectronic applications. Electronics 2016, 5, 13. [Google Scholar] [CrossRef]
  23. Yogeesh, M.N.; Parrish, K.N.; Lee, J.; Park, S.; Tao, L.; Akinwande, D. Towards the realization of graphene based flexible radio frequency receiver. Electronics 2015, 4, 933–946. [Google Scholar] [CrossRef]
  24. Rubio-Bollinger, G.; Guerrero, R.; Perez de Lara, D.; Quereda, J.; Vaquero-Garzon, L.; Agrait, N.; Bratschitsch, R.; Castellanos-Gomez, A. Enhanced visibility of MoS2, MoSe2, WSe2 and black-phosphorus: Making optical identification of 2D semiconductors easier. Electronics 2015, 4, 847–856. [Google Scholar] [CrossRef]
  25. Varghese, S.S.; Varghese, S.H.; Swaminathan, S.; Singh, K.K.; Mittal, V. Two-dimensional materials for sensing: Graphene and beyond. Electronics 2015, 4, 651–687. [Google Scholar] [CrossRef]
  26. Akinwande, D.; Petrone, N.; Hone, J. Two-dimensional flexible nanoelectronics. Nat. Commun. 2014, 5, 5678. [Google Scholar] [CrossRef] [PubMed]
  27. China’s Rising Forte: Graphene. Available online: http://www.samaterials.com/content/27-chinas-rising-forte-graphene (accessed on 2 June 2016).
  28. Graphene-based Chinese smartphone technology could ‘boost battery life by 50 percent’. Available online: http://www.scmp.com/lifestyle/technology/article/1730067/graphene-based-chinese-smartphone-technology-could-boost (accessed on 2 June 2016).
  29. Kroemer, H. Nano-whatever: Do we really know where we are heading? Phys. Status Solidi (a) 2005, 202, 957–964. [Google Scholar] [CrossRef]

Share and Cite

MDPI and ACS Style

Schwierz, F. Two-Dimensional Electronics — Prospects and Challenges. Electronics 2016, 5, 30. https://doi.org/10.3390/electronics5020030

AMA Style

Schwierz F. Two-Dimensional Electronics — Prospects and Challenges. Electronics. 2016; 5(2):30. https://doi.org/10.3390/electronics5020030

Chicago/Turabian Style

Schwierz, Frank. 2016. "Two-Dimensional Electronics — Prospects and Challenges" Electronics 5, no. 2: 30. https://doi.org/10.3390/electronics5020030

APA Style

Schwierz, F. (2016). Two-Dimensional Electronics — Prospects and Challenges. Electronics, 5(2), 30. https://doi.org/10.3390/electronics5020030

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

Article Metrics

Back to TopTop