Electronics, Volume 5, Issue 2

We report on the electron transport properties of two-dimensional electron gas confined in a quaternary barrier InAlGaN/AlN/GaN heterostructure down to cryogenic temperatures for the first time. A state-of-the-art electron mobility of 7340 cm²·V⁻¹·s⁻...

For about a decade, 2D (two-dimensional) materials have represented one of the hottest directions in solid-state research.[...]

Nowadays, Internet-of-Things (IoT) devices generate data at high speed and large volume. Often the data require real-time processing to support high system responsiveness which can be supported by localised Cloud and/or Fog computing paradigms. Howev...

This paper reports the successful fabrication of a GaN-on-Si high electron mobility transistor (HEMT) with a 1702 V breakdown voltage (BV) and low current collapse. The strain and threading dislocation density were well-controlled by 100 pairs of AlN...

Gallium nitride integrated technology is very promising not only for wireless applications at mobile frequencies (below 6 GHz) but also for network backhaul radiolink deployment, now under deep revision for the incoming 5G generation of mobile commun...

This paper reports the design of a photovoltaic energy harvesting device used as a telemetry node in wireless sensor networks. The device draws power from the small solar cell, stores it into the primary energy buffer and backup supercapacitor, colle...

In a digital modem design, the integration of the Analog to Digital Converters (ADC) and Digital to Analog Converters (DAC) with the core processor is usually a major issue for the designer. In this paper an FPGA scalable Software Defined Radio platf...

The development of Smart Grid systems has proven to be a challenging task. Besides the inherent technical complexity, the involvement of different stakeholders from different disciplines is a major challenge. In order to maintain the strict security...

The present study highlights the interdependence of ambient humidity levels on the electrical parameters of organic-inorganic hybrid composite based humidity sensor at varied AC frequencies of input signal. Starting from the bottom, the layer stack o...

Transaction level models of systems-on-chip in SystemC are commonly used in the industry to provide an early simulation environment. The SystemC standard imposes coroutine semantics for the scheduling of simulated processes, to ensure determinism and...

Network on Chip (NoC) architectures have emerged in recent years as scalable communication fabrics to enable high bandwidth data transfers in chip multiprocessors (CMPs). These interconnection architectures still need to conquer many challenges, e.g....

Trapping effects on two AlGaN/GaN Schottky diodes with a different composition of the AlGaN barrier layer were analyzed by current transient spectroscopy. The current transients were measured at a constant bias and at six different temperatures betwe...

Driving with too short of a safety distance is a common problem in road traffic, often with traffic accidents as a consequence. Research has identified a lack of vehicle-mountable devices for alerting the drivers of trailing vehicles about keeping a...

The reliability of power electronic devices and components is very important to manufacturers. In recent years, many researchers have conducted reliability assessments of power electronic devices, yet the reliability of numerous circuits used widely...

This paper presents a method for designing linear, quadratic and cubic interpolators that compute elementary functions using truncated multipliers, squarers and cubers. Initial coefficient values are obtained using a Chebyshev series approximation. A...

Motion planning deals with finding a collision-free trajectory for a robot from the current position to the desired goal. For a high-dimensional space, sampling-based algorithms are widely used. Different sampling algorithms are used in different env...

Vertical structured Gallium nitride (GaN) p-n junction diodes with improved breakdown properties have been demonstrated using high-k dielectric passivation underneath the field plate. Simulation results at a reverse voltage of 1 kV showed that the ma...

This paper reports on an extensive investigation of the gate stability of GaN-based High Electron Mobility Transistors with p-type gate submitted to forward gate stress. Based on combined electrical and electroluminescence measurements, we demonstrat...