Effects of Equivalent-Oxide-Thickness and Fin-Width Scaling on In0.53Ga0.47As Tri-Gate Metal-Oxide-Semiconductor-Field-Effect-Transistors with Al2O3/HfO2 for Low-Power Logic Applications
Round 1
Reviewer 1 Report
According to the Reviewer’s opinion, this study focuses on a timely and relevant topic. I therefore recommend it for publication.
In the Introduction, the Author should mention about the FinFET technology (e.g., “A comprehensive review on microwave FinFET modeling for progressing beyond the state of art” SSE 2013) and make clear the difference(s) between the FinFET structure and the proposed one.
It would be nice to report the scattering parameter measurements and to calculate the cut-off frequency.
It would be nice to analyze the scaling of the device performance versus the gate length.
In the Introduction, a few references might be provided on the MOSFET gate-length scaling (“Effects of gate-length scaling on microwave MOSFET performance,” Electronics 2017).
Please replace “sec” with “s”, which is the symbol of second.
Author Response
Dear A Reviewer,
Thanks for your constructive comments. It will be improving my manuscript a lot.
I am happy to accept your suggestion as below.
In the Introduction, the Author should mention about the FinFET technology (e.g., “A comprehensive review on microwave FinFET modeling for progressing beyond the state of art” SSE 2013) and make clear the difference(s) between the FinFET structure and the proposed one.
==> I have added above reference in our revised manuscript as # 18.
It would be nice to report the scattering parameter measurements and to calculate the cut-off frequency.
==> Unfortunately, my main purpose is to see the DC characteristic for logic application. I don't have GSG type contact pad for S-parameter measurement. In the near future, I will be happy to share if we can measure it.
It would be nice to analyze the scaling of the device performance versus the gate length.
==> Unlikely, I don't have enough Lg device for this study. but some of my previous report in reference #17, you can find some of information but I will be happy to share any updates in near future.
In the Introduction, a few references might be provided on the MOSFET gate-length scaling (“Effects of gate-length scaling on microwave MOSFET performance,” Electronics 2017).
==> I have included this reference as #18.
Please replace “sec” with “s”, which is the symbol of second.
==> I have changed it from "sec" to "s" in revised manuscript.
Reviewer 2 Report
The author of the reviewed paper ”Effects of Equivalent-Oxide-Thickness and Fin-Width Scaling on In0.53Ga0.47As Tri-Gate Metal-Oxide-Semiconductor-Field-Effect-Transistors wit Al2O3/HfO2 for Low-Power Logic Applications” carried out experimental investigations, in which the effect of equivalent-oxide-thickness and fin-width on the electrostatic integrity of tri-gate InGaAs MOSFETs was analysed.
The paper is very interesting and the issues raised are presented at a high scientific level with adequate graphics and characteristic taken from results from experiments. The introduction is well prepared with a good selection of relevant literature sources. The experimental part is short, but quite well documented with the results of the experiments with an exhaustive description. In my opinion author should consider the expanding of conclusions as well as improved a few minor mistakes listed below:
Page: 1, Line: 42: Please eliminate the conjunction hanging at the end of the line – move "a" to the next line. Page: 2-3, Figure: 1a and 1b: Please consider reducing the size of both figures and placing them on one page with caption. Page: 4, Line: 123/124/125/128: Value and unit should be in one line. The author use many symbols and acronyms. I suggest considering inserting their explanation in the Nomenclature at the end of the work (after the Conflicts of Interest).
Comments for author File: 
Comments.pdf
Author Response
Dear A reviewer,
Thanks for you valuable input on my manuscript. It will be helpful to improve my manuscript a lots.
My answers on your suggestion is below.
Page: 1, Line: 42: Please eliminate the conjunction hanging at the end of the line – move "a" to the next line.
==> I have changed this in revised manuscripts.
2. Page: 2-3, Figure: 1a and 1b: Please consider reducing the size of both figures and placing them on one page with caption.
==> I have rearranged the figure requested as you suggested.
3. Page: 4, Line: 123/124/125/128: Value and unit should be in one line.
==> I have edited statement to show value and unit in one line.
4. The author use many symbols and acronyms. I suggest considering inserting their explanation in the Nomenclature at the end of the work (after the Conflicts of Interest).
==> Thanks for your input, I have already use full name at the beginning of explanation in my manuscript. For example, MOSFET is standing out line #25 like Metal-Oxide-Semiconductor Field-Effect-Transistor. After that I have using it with MOSFET like that.
