Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
5.3
2.5
Journals
Applied Sciences
Special Issues
Advanced Compound Semiconductor
applsci-logo
Submit to Applied Sciences Review for Applied Sciences Propose a Special Issue

Journal Menu

► Journal Menu

Journal Browser

► Journal Browser
share announcement

Advanced Compound Semiconductor

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Materials Science and Engineering".

Deadline for manuscript submissions: closed (20 November 2022) | Viewed by 10712

Special Issue Editor

Prof. Dr. Jinsub Park

E-Mail Website
Guest Editor
Department of Electronic Engineering, Hanyang University, Seoul 04763, Korea
Interests: metal-oxide nanomaterials; compound semiconductors; optoelectronic devices; optical sensor; energy harvesting; 2D/spheres nanomaterials and applications
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Compound semiconductors consisting of Group III-V elements and Group II-VI elements have drawn a great deal of attention because of the versatility of their application in industrial fields such as LEDs, solar cells, detectors, sensors, and energy harvesting. Until now, the utilization of compound semiconductors has been limited in terms of optoelectronic devices. We want to expand this field of research to various applications using emerging nanomaterials to satisfy the demand for advanced display and electronic devices. The Journal Applied Sciences will publish a Special Issue providing an overview of compound semiconductor materials, devices, and related cutting-edge technologies. Topics of interest include, but are not limited to: new materials and characterization, LEDs and LDs, solar cells, photodetectors, photocatalyst, power devices, electrical and optical properties, energy harvesting, theory and simulation, emerging nanomaterials and nanostructures; hybrid structures, quantum dots and applications.

Prof. Dr. Jinsub Park
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Applied Sciences is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • compound semiconductors
  • optoelectronics
  • sensors
  • power devices
  • nanomaterials
  • energy harvesting
  • quantum dots(QDs)

Published Papers (4 papers)

Download All Papers
Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:

Research

Jump to: Other

11 pages, 4131 KiB  
Article
Enhancement-Mode Heterojunction Vertical β-Ga2O3 MOSFET with a P-Type Oxide Current-Blocking Layer
by Yuwen Huang, Xiaoping Xie, Zeyulin Zhang, Peng Dong, Zhe Li, Dazheng Chen, Weidong Zhu, Shenglei Zhao, Qian Feng, Jincheng Zhang, Chunfu Zhang and Yue Hao
Appl. Sci. 2022, 12(3), 1757; https://doi.org/10.3390/app12031757 - 8 Feb 2022
Cited by 6 | Viewed by 3055
Abstract
The vertical heterojunction Ga2O3 MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the p-type oxide as the current-blocking layer (CBL) is investigated for the first time using SILVACO simulation software. The results show that the threshold voltage of the device is easily positive, [...] Read more.
The vertical heterojunction Ga2O3 MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the p-type oxide as the current-blocking layer (CBL) is investigated for the first time using SILVACO simulation software. The results show that the threshold voltage of the device is easily positive, which means that the device works in the enhancement mode. By adjusting the doping concentration (from 2 × 1017 cm−3 to 2 × 1018 cm−3) and thickness (from 0.4 um to 2 um) of p-SnO CBL, the threshold voltage is around from 2.4 V to 2.8 V and the breakdown voltage of the device can be increased from 361 V to 518 V. Compared with the original homojunction Ga2O3 vertical MOSFET with CBL, the p-SnO CBL can greatly improve the performance of the device. Other p-type oxides are also investigated as the CBL and show promising performances. This work has a certain guiding significance for the design of a vertical enhanced current-blocking layer MOSFET device and for the development of a Ga2O3 heterojunction power device. Full article
(This article belongs to the Special Issue Advanced Compound Semiconductor)
►▼ Show Figures

Figure 1

10 pages, 3224 KiB  
Article
Improvement of Heat Transfer Properties through TiO2 Nanosphere Monolayer Embedded Polymers as Thermal Interface Materials
by Jinuk Moon, Uijin Jung, Bomseumin Jung and Jinsub Park
Appl. Sci. 2022, 12(3), 1348; https://doi.org/10.3390/app12031348 - 27 Jan 2022
Cited by 2 | Viewed by 2008
Abstract
A thermal interface material (TIM) is a substance that reduces the thermal resistance between a heat source and heat sink, which facilitates heat conduction towards the outside. In this study, a TiO2 nanosphere (NS)-filler based TIM was fabricated via facile processes such [...] Read more.
A thermal interface material (TIM) is a substance that reduces the thermal resistance between a heat source and heat sink, which facilitates heat conduction towards the outside. In this study, a TiO2 nanosphere (NS)-filler based TIM was fabricated via facile processes such as spin-coating and icing methods. Thermal conductivity of the fabricated TiO2 NS-based TIM was enhanced by increasing the loading contents of the TiO2 NS-filler and successfully cooling down the GPU chipset temperature from 62 °C to 50 °C. Moreover, the TIM with the TiO2 NS-monolayer additionally lowered the GPU temperature by 1–7 °C. The COMSOL simulation results show that the TiO2 NS-monolayer, which was in contact with the heat source, boosts the heat transfer characteristics from the heat source toward the inside of the TIM. The suggested metal oxide monolayer-based TIM is an effective structure that reduces the temperature of the device without an additional filler loading, and it is expected to have a wide range of applications for the thermal management of advanced devices. Full article
(This article belongs to the Special Issue Advanced Compound Semiconductor)
►▼ Show Figures

Figure 1

15 pages, 5657 KiB  
Article
Design and Implementation of New Coplanar FA Circuits without NOT Gate and Based on Quantum-Dot Cellular Automata Technology
by Mohsen Vahabi, Pavel Lyakhov, Ali Newaz Bahar and Khan A. Wahid
Appl. Sci. 2021, 11(24), 12157; https://doi.org/10.3390/app112412157 - 20 Dec 2021
Cited by 8 | Viewed by 3181
Abstract
The miniaturization of electronic devices and the inefficiency of CMOS technology due to the development of integrated circuits and its lack of responsiveness at the nanoscale have led to the acquisition of nanoscale technologies. Among these technologies, quantum-dot cellular automata (QCA) is considered [...] Read more.
The miniaturization of electronic devices and the inefficiency of CMOS technology due to the development of integrated circuits and its lack of responsiveness at the nanoscale have led to the acquisition of nanoscale technologies. Among these technologies, quantum-dot cellular automata (QCA) is considered one of the possible replacements for CMOS technology because of its extraordinary advantages, such as higher speed, smaller area, and ultra-low power consumption. In arithmetic and comparative circuits, XOR logic is widely used. The construction of arithmetic logic circuits using AND, OR, and NOT logic gates has a higher design complexity. However, XOR gate design has a lower design complexity. Hence, the efficient and optimized XOR logic gate is very important. In this article, we proposed a new XOR gate based on cell-level methodology, with the expected output achieved by the influence of the cells on each other; this design method caused less delay. However, this design was implemented without the use of inverter gates and crossovers, as well as rotating cells. Using the proposed XOR gate, two new full adder (FA) circuits were designed. The simulation results indicate the advantage of the proposed designs compared with previous structures. Full article
(This article belongs to the Special Issue Advanced Compound Semiconductor)
►▼ Show Figures

Figure 1

Other

Jump to: Research

10 pages, 5187 KiB  
Brief Report
Arrays of TiO2 Nanosphere Monolayers on GaN-Based LEDs for the Improvement of Light Extraction
by Dohyun Kim, UiJin Jung, Wonjun Heo, Navneet Kumar and Jinsub Park
Appl. Sci. 2023, 13(5), 3042; https://doi.org/10.3390/app13053042 - 27 Feb 2023
Cited by 1 | Viewed by 1420
Abstract
We report on the fabrication of TiO2 nanosphere (NS) monolayer arrays for the enhancement of light extraction quantum efficiency of GaN-based light-emitting diodes (LEDs). The fabricated TiO2 NSs monolayer arrays were composed of different phases of anatase (An-) and amorphous (Am-) [...] Read more.
We report on the fabrication of TiO2 nanosphere (NS) monolayer arrays for the enhancement of light extraction quantum efficiency of GaN-based light-emitting diodes (LEDs). The fabricated TiO2 NSs monolayer arrays were composed of different phases of anatase (An-) and amorphous (Am-) TiO2. The arrays were transferred onto the topmost layer of LED chips via the facile icing transfer method. The LED chips covered with Am-TiO2 NS monolayer arrays showed 3.0- times enhanced light output power intensity compared with reference LED chips at a fixed injection current of 100 mA. The enhanced light extraction of LED chips by an Am-TiO2 NS monolayer can be attributed to a high transmittance (91.1%) in visible and increased light extraction probability of photons generated in LEDs, resulting from the enhanced light coupling efficiency by reduced total internal reflection (TIR). Finite-difference time-domain (FDTD) simulation results also agreed well with the experimentally observed results. Based on the experimental and theoretical results, our suggested Am- and An-TiO2 NS arrays can be considered a very facile and effective method to improve the device performance of various visible LED chips. Full article
(This article belongs to the Special Issue Advanced Compound Semiconductor)
►▼ Show Figures

Figure 1

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-4
Back to TopTop