Advances in Thin Film Transistors: Properties and Applications, 2nd Edition

Dear Colleagues,

Following the successful first edition, we would like to invite you to submit your work to this Special Issue, “Advances in Thin Film Transistors: Properties and Applications Volume II”. Recently, transparent oxide semiconductors (TOSs) have been the object of extensive research in various connected fields. Owing to their advantages of high mobility, good transparency, and ideal uniformity, TOSs are more suitable for the application of thin-film transistors (TFTs) than conventional Si TFTs. In addition, the features of a low-temperature process and their compatibility with flexible electronics enable TOSs to become the mainstream channel materials in next-generation flat panel displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light-emitting diodes (AMOLEDs). Both In₂O₃ (~3.7 eV) and Ga₂O₃ (~4.9 eV) with wide energy band gaps possess excellent transparency. By adjusting to each stoichiometry, indium-based transparent conducting oxide materials have been widely used in flat panel displays and optoelectronic devices, among other applications. Thin-film transistors (TFTs) have been in extensive use as on/off switch and current driving devices for various applications, ever since the concept of TFTs was reported. This Special Issue of Coatings, “Advances in Thin Film Transistors: Properties and Applications Volume II”, aims to cover recent advances in TFT technologies.

Dr. Sheng-Po Chang
Dr. Kuan-Jen Chen
Dr. Chih-Chiang Yang
Dr. Ke-Jing Lee
Guest Editors

Manuscript Submission Information

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