Atomic Layer Deposition of Oxide Thin Films

A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Thin Films".

Deadline for manuscript submissions: closed (31 December 2023) | Viewed by 2270

Special Issue Editors


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Guest Editor
Department of Material Science and Technology, Peter the Great St. Petersburg Polytechnic University, Polytechnicheskayast. 29, Saint-Petersburg 195251, Russia
Interests: atomic layer deposition; coatings and thin films; lithium-ion batteries; thin-film and solid-state batteries; materials science, synthesis and characterization; electrochemistry
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Guest Editor
Ioffe Institute, Politekhnicheskaya 26, Saint-Petersburg 194021, Russia
Interests: atomic layer deposition, molecular layering, lithium-ion batteries, lithium-ion technology, solid-state chemistry

Special Issue Information

Dear Colleagues,

Atomic layer deposition (ALD) is a promising method since it allows the synthesis of uniform films of various materials on flat, high aspect ratio and 3D surfaces. Furthermore, it is possible to control the thickness of the deposited coatings with high precision. ALD can be applied in wide range of applications, from creation of the individual functional coatings to full thin-film devises fabrication.

The aim of the Special issue is to acquaint scientific community with the main achievements in the field of oxide film formation using the ALD method for various applications.

In this Special Issue, original research articles and reviews are welcome. Research areas may include (but not limited to) the following:

  • Thermal and Plasma-assisted atomic layer deposition;
  • Precursors for oxide films deposition;
  • Multilayered structures, nanolaminates;
  • Effect of ALD conditions on growth rate, chemical and phase composition of deposited films and coatings;
  • Surface functionalization;
  • Study of functional properties (dielectric, semiconductor, electrochemical, passivation, catalytic etc.) of deposited films;
  • Oxide films for microelectronics, electrochromic devices, photovoltaic, Li-ion and Na-ion batteries, solid-state batteries and other applications.

Dr. Maxim Yu. Maximov
Dr. Yury Koshtyal
Guest Editors

Manuscript Submission Information

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Keywords

  • oxide films
  • atomic layer deposition
  • catalysis
  • electrochromic properties
  • lithium-ion batteries
  • microelectronics
  • photovoltaic devices
  • solid-state batteries

Published Papers (2 papers)

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Research

13 pages, 4176 KiB  
Article
Atomic Layer Deposition of La2O3 Film with Precursor La(thd)3-DMEA
by Wenyong Zhao, Jie Jiang, Yawen Luo, Jiahao Li and Yuqiang Ding
Coatings 2023, 13(5), 870; https://doi.org/10.3390/coatings13050870 - 5 May 2023
Cited by 3 | Viewed by 1946
Abstract
In this paper, a new precursor La(thd)3-DMEA (thd = 2,2,6,6-tetramethyl-3,5-heptanedione, DMEA = N,N′-dimethylethylenediamine) was synthesized and characterized with 1H-NMR and X-ray single crystal diffraction. The thermal properties of La(thd)3-DMEA were checked by thermogravimetric analysis (TGA), which confirmed that [...] Read more.
In this paper, a new precursor La(thd)3-DMEA (thd = 2,2,6,6-tetramethyl-3,5-heptanedione, DMEA = N,N′-dimethylethylenediamine) was synthesized and characterized with 1H-NMR and X-ray single crystal diffraction. The thermal properties of La(thd)3-DMEA were checked by thermogravimetric analysis (TGA), which confirmed that the volatility and suitability of La(thd)3-DMEA are suitable for atomic layer deposition (ALD). We studied the atomic layer deposition of La2O3 films on a SiO2 surface with La(thd)3-DMEA and O3 as precursors. Self-limiting deposition behaviors were found for the prepared films. The purity and surface morphology of the as-grown La2O3 films, which possessed a constant growth rate of ~0.4 Å/cycle at 250–280 °C, were confirmed by XPS, SEM, and AFM. The results show that La(thd)3-DMEA is a suitable precursor for the atomic layer deposition of La2O3 film. Full article
(This article belongs to the Special Issue Atomic Layer Deposition of Oxide Thin Films)
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13 pages, 3911 KiB  
Article
The Array of Si Nanowires Covered with Ag Nanoparticles by ALD: Fabrication Process and Optical Properties
by Kristina Prigoda, Anna Ermina, Vladimir Bolshakov, Denis Nazarov, Ilya Ezhov, Oleksiy Lutakov, Maxim Maximov, Vladimir Tolmachev and Yuliya Zharova
Coatings 2022, 12(11), 1748; https://doi.org/10.3390/coatings12111748 - 15 Nov 2022
Cited by 2 | Viewed by 1719
Abstract
In this work, we proposed a method for creating an Ag/Si composite structure consisting of an array of vertical silicon nanowires (SiNWs) decorated with silver nanoparticles (AgNPs). A two-stage metal-assisted chemical etching of Si was used to obtain the SiNW array, and atomic [...] Read more.
In this work, we proposed a method for creating an Ag/Si composite structure consisting of an array of vertical silicon nanowires (SiNWs) decorated with silver nanoparticles (AgNPs). A two-stage metal-assisted chemical etching of Si was used to obtain the SiNW array, and atomic layer deposition was used to fabricate the AgNPs. A uniform distribution of AgNPs along the SiNW height was achieved. The measured characteristics by spectroscopic ellipsometry directly established the presence of AgNPs deposited on the SiNWs. The height of the sublayers and the fractions of Si and Ag in them were determined using the multilayer model and the effective Bruggeman medium approximation in the interpretation of the experimental data. For AgNP layers deposited on an Si wafer surface, the thickness (from 2.3 to 7.8 nm) and complex dielectric functions were verified within the framework of the Drude–Lorentz model. The optical properties of Ag/SiNW structures with complex spatial geometry were simulated in the COMSOL Multiphysics software. The expected localization of the electric field on the surface and near the AgNP was observed as a result of the plasmon resonance excitation. The calculated enhancement factor reached 1010, which indicates the possibility of using such structures as substrates for surface-enhanced Raman scattering. Full article
(This article belongs to the Special Issue Atomic Layer Deposition of Oxide Thin Films)
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