Thin Films by Atomic Layer Deposition: Properties and Applications
A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Surface Characterization, Deposition and Modification".
Deadline for manuscript submissions: closed (31 August 2021) | Viewed by 6720
Special Issue Editors
Interests: semiconductor device physics; electronic/optoelectronic devices; energy harvesting devices; thin film growth mechanism
Special Issue Information
Dear Colleagues,
The strong demand for faster computing speed and lower power consumption have led to the continuous scaling down of complementary metal oxide semiconductor (CMOS) devices, including smaller transistor feature sizes and thinner gate oxides with complicated three-dimensional structure, such as Fin-FET or gate-all-around (GAA) structures. Vertically stacked devices are of great importance in Flash and new nonvolatile memory applications. Despite the progress in such devices, rapid advances in device performance has been limited by the presence of high interface density and other nonstoichiometric defects, which inevitably increase the leakage current and significantly threaten the long-term reliability of the device. As a method to improve the film quality, atomic layer deposition (ALD), favored for its low-temperature self-limiting growth mechanism, has been employed especially in nanoscale devices. It can offer high uniformity, superior conformality (step coverage), and accurate thickness control. While characterizing device performance, the parasitic resistance, leakage current, and band alignment between gate dielectric and semiconductor layers are important factors. In addition, a thorough understanding of the properties of ALD-grown thin films is fundamental to designing devices using both mature and emergent ALD-grown materials.
The topics of this Special Issue include, but are not limited to:
- Thin films by atomic layer deposition;
- Material characterization techniques (SEM, TEM, XPS, AFM, XRD etc.);
- Optical/electrical characterization techniques (PL, Raman, IV, CV, Hall, DLTS, etc.);
- Surface passivation and coatings using ALD thin films;
- Fundamental and functional properties of surface and interfaces;
- Device fabrication, characterization and reliability using ALD thin films.
Prof. Hogyoung Kim
Prof. Byung Joon Choi
Guest Editors
Manuscript Submission Information
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Keywords
- Atomic layer deposition
- High-k dielectric gate oxide
- Surface passivation
- Emerging electronic thin film materials
- Device fabrication and characterization
