Wide Bandgap Semiconductor Materials and Devices
A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".
Deadline for manuscript submissions: closed (1 December 2021) | Viewed by 40373
Special Issue Editors
Interests: molecular beam epitaxy; semiconductor device physics; epitaxial growth; optoelectronics; thin films and nanotechnology; gallium nitride (GaN) epilayers and LEDs; III–V semiconductors; MOCVD; semiconductor lasers; power electronics
Special Issues, Collections and Topics in MDPI journals
Interests: electronic; magnetic and photonic materials; energy materials; processing nanomaterials and nanotechnology
Interests: wide bandgap semiconductors includes gallium oxides and gallium nitrides based power electronics including MOSFET, SBD as well as solar-blind/x-ray detectors, device fabrication and test
Interests: The physics, design, simulation, fabrication, characterization, reliability, robustess, packaging, and circuit applications of WBG and UWBG devices for electronic as well as photonic applications
Interests: wide bandgap semiconductor-based materials and devices; 2D materials and devices
Interests: MOCVD epitaxial growth of GaN based semiconductors; explore new physics of impurity/defects in III-nitrides; new physics and new functionality of electronic materials and devices for III-nitrides
Interests: wide bandgap semiconductor III-nitride materials and devices for both power electronics and optoelectronics
Special Issue Information
Dear Colleagues,
Wide bandgap semiconductors (WBGS) comprise those materials with bandgaps greater than 3.0 eV and exhibit many attractive properties far beyond the capabilities of Si and GaAs, including gallium nitride (GaN), aluminum gallium nitride (AlGaN), silicon carbide (SiC), gallium oxide (Ga2O3), aluminum gallium oxide (AlGaO), diamond, boron nitride and perovskite oxides (alkaline earth stannates) etc. The WBGS’s extraordinary physical and electrical properties make the materials a natural for meeting the performance demands of optoelectronic and power electronic device applications, thus the material- and device-related research based on these WBGSs is one of the hottest topics in the semiconductor community.
We invite researchers to contribute to the Special Issue titled “Wide Bandgap Semiconductor Materials and Devices”; potential topics include but are not limited to:
- WBGS thin film growth, doping and defects, processing, and theory;
- WBGS low dimensional and nanostructure (quantum dot, quantum well, and quantum wire) synthesis, processing, and theory;
- WBGS electronic and optoelectronic properties and characterization;
- WBGS optoelectronic devices (LED, lasers, and detectors) and characterizations;
- WBGS power electronic devices and characterizations.
Prof. Dr. Haiding Sun
Prof. Dr. Bharat Jalan
Prof. Dr. Yuhao Zhang
Prof. Dr. Shibing Long
Prof. Dr. Rajendra Singh
Dr. Xuelin Yang
Prof. Dr. Yuji Zhao
Prof. Dr. Bin Liu
Guest Editors
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Keywords
- wide bandgap semiconductors
- crystal growth
- optoelectronic devices
- power electronic devices
- nanostructures
- doping
- defects
- MBE
- CVD/MOCVD
- HVPE
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