Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
4.2
2.4
Journals
Crystals
Special Issues
Advanced Materials and Devices for Photodetection
share announcement

Advanced Materials and Devices for Photodetection

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Materials for Energy Applications".

Deadline for manuscript submissions: closed (10 April 2022) | Viewed by 6681

Special Issue Editors

Prof. Dr. Daohua Zhang

E-Mail Website
Guest Editor
School of Electrical and Electronic Engineering, Nanyang Technology of University, Singapore 63978, Singapore
Interests: semiconductor materials and devices; nanophotonics
Prof. Dr. Dawei Zhang

E-Mail Website
Guest Editor
Engineering Research Center of Optical Instrument and System, the Ministry of Education, Shanghai Key Laboratory of Modern Optical System, University of Shanghai for Science and Technology, Shanghai 200093, China
Interests: optical films and materials
Special Issues, Collections and Topics in MDPI journals
Dr. Jinchao Tong

E-Mail Website
Guest Editor
School of Electrical and Electronic Engineering, Nanyang Technology of University, Singapore 63978, Singapore
Interests: semiconductor materials and devices
Dr. Fei Suo

E-Mail Website
Guest Editor
School of Electrical and Electronic Engineering, Nanyang Technology of University, Singapore 63978, Singapore
Interests: semiconductor materials and devices

Special Issue Information

Dear Colleagues,

Photodetection has always been a hot research topic as it is crucial not only for the advancement of science but also for a wide range of applications in optical communications, biomedical imaging, security, night vision, gas sensing, and motion detection. In recent years, there has been significant improvement in photodetector performance due to the associated progress in developing novel materials and nanostructures. This Special Issue will present a collection of articles detailing recent research in materials, devices, and nanostructures that can be used for improving photodetection performance in different wavelength ranges. The topics covered include but are not limited to:

  • Semiconductors for near- and mid-infrared waves
  • Materials for terahertz and millimeter waves
  • Photodetectors
  • Nanostructure for photodetection
  • Plasmonic structure for enhancement
  • Design and simulation of photodetectors
  • Theoretical research on light–matter interaction
  • One- and two-dimensional detector array
  • Photodetector applications
  • Imaging system

Prof. Dr. Daohua Zhang
Prof. Dr. Dawei Zhang
Dr. Jinchao Tong
Dr. Fei Suo
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • semiconductors for near- and mid-infrared waves
  • materials for terahertz and millimeter waves
  • photodetectors
  • nanostructure for photodetection
  • photodetector applications
  • imaging system

Benefits of Publishing in a Special Issue

  • Ease of navigation: Grouping papers by topic helps scholars navigate broad scope journals more efficiently.
  • Greater discoverability: Special Issues support the reach and impact of scientific research. Articles in Special Issues are more discoverable and cited more frequently.
  • Expansion of research network: Special Issues facilitate connections among authors, fostering scientific collaborations.
  • External promotion: Articles in Special Issues are often promoted through the journal's social media, increasing their visibility.
  • e-Book format: Special Issues with more than 10 articles can be published as dedicated e-books, ensuring wide and rapid dissemination.

Further information on MDPI's Special Issue polices can be found here.

Published Papers (2 papers)

Download All Papers
Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:

Research

23 pages, 10281 KiB  
Article
Analysis of the Radiation Attenuation Parameters of Cu2HgI4, Ag2HgI4, and (Cu/Ag/Hg I) Semiconductor Compounds
by Heba Y. Zahran, El Sayed Yousef, Mohammed S. Alqahtani, Manuela Reben, Hamed Algarni, Ahmad Umar, Hasan B. Albargi, Ibrahim S. Yahia and Nehal Sabry
Crystals 2022, 12(2), 276; https://doi.org/10.3390/cryst12020276 - 17 Feb 2022
Cited by 9 | Viewed by 2283
Abstract
This analysis aims to determine photon attenuation for five different ternary and binary iodide compounds using Phy-X/PSD software. For a broad range of photon energies between 0.015 and 15 MeV, the mass attenuation coefficient (MAC), linear attenuation coefficient (LAC), half-value layer (HVL), tenth-value [...] Read more.
This analysis aims to determine photon attenuation for five different ternary and binary iodide compounds using Phy-X/PSD software. For a broad range of photon energies between 0.015 and 15 MeV, the mass attenuation coefficient (MAC), linear attenuation coefficient (LAC), half-value layer (HVL), tenth-value layer (TVL), and mean free path (MFP) for the samples of Cu2HgI4, Ag2HgI4, CuI, AgI, and HgI were calculated. For illustration, the following values of TVL apply at 1 MeV: S1: 6.062 cm, S2: 6.209 cm, S3: 6.929 cm, S4: 6.897 cm, and S5: 4.568 cm. Some important parameters, such as total atomic cross-sections (ACS), electronic cross-sections (ECS), the effective atomic numbers (Zeff), effective electron density (Neff), and effective conductivity (Ceff) of the samples were also calculated. Additionally, exposure buildup factors (EBF) and energy-absorption buildup factor (EABF) were estimated. These data on the radiation characteristics of our samples could be useful for gamma attenuation. The HgI sample has the highest FNRCS values (0.0892) relative to the other tested samples showing good neutron attenuation features. The CuI sample shows low gamma attenuation features; in contrast, it shows high neutron attenuation features. Full article
(This article belongs to the Special Issue Advanced Materials and Devices for Photodetection)
►▼ Show Figures

Figure 1

11 pages, 2771 KiB  
Article
Enhanced Properties of Extended Wavelength InGaAs on Compositionally Undulating Step-Graded InAsP Buffers Grown by Molecular Beam Epitaxy
by Xuefei Li, Jianming Xu, Tieshi Wei, Wenxian Yang, Shan Jin, Yuanyuan Wu and Shulong Lu
Crystals 2021, 11(12), 1590; https://doi.org/10.3390/cryst11121590 - 20 Dec 2021
Cited by 7 | Viewed by 3352
Abstract
The extended wavelength InGaAs material (2.3 μm) was prepared by introducing compositionally undulating step-graded InAsyP1−y buffers with unequal layer thickness grown by solid-source molecular beam epitaxy (MBE). The properties of the extended wavelength InGaAs layer were investigated. The surface showed [...] Read more.
The extended wavelength InGaAs material (2.3 μm) was prepared by introducing compositionally undulating step-graded InAsyP1−y buffers with unequal layer thickness grown by solid-source molecular beam epitaxy (MBE). The properties of the extended wavelength InGaAs layer were investigated. The surface showed ordered crosshatch morphology and a low roughness of 1.38 nm. Full relaxation, steep interface and less than one threading dislocation in the InGaAs layer were demonstrated by taking advantage of the strain compensation mechanism. Room temperature photoluminescence (PL) exhibited remarkable intensity attributed to the lower density of deep non-radiative centers. The emission peak energy with varied temperatures was in good agreement with Varshni’s empirical equation, implying high crystal quality without inhomogeneity-induced localized states. Therefore, our work shows that compositionally undulating step-graded InAsP buffers with a thinner bottom modulation layer, grown by molecular beam epitaxy, is an effective approach to prepare InGaAs materials with wavelengths longer than 2.0 μm and to break the lattice limitation on the materials with even larger mismatch. Full article
(This article belongs to the Special Issue Advanced Materials and Devices for Photodetection)
►▼ Show Figures

Figure 1

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-2
Back to TopTop