Memristors beyond the Limitations: Novel Methods and Materials
A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Electronic Materials".
Deadline for manuscript submissions: 15 November 2024 | Viewed by 1355
Special Issue Editors
Interests: mmWave radar systems; RF sensing techniques and wireless sensor networks; 5G networks; signal processing; data analysis; machine learning; memristors
Interests: microwave circuits; microwave filters; frequency-selective surfaces; memristive systems; circuit theory
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Special Issue Information
Dear Colleagues,
By reaching the end of the Moore era, a novel approach superior to existing computing systems is required and various types of non-volatile memories (NVMs) have been developed. Among all of the current memory technologies, memristor has emerged as a new generation of NVMs. The most exciting advantages of memristor are its fast operation, high storage density, application in brain-inspired computing, and compatibility with semiconductor technology. It is also scalable to several nanometres via the development of nanotechnology methods; therefore, it is a suitable alternative for logic operations, neuromorphic computing and high frequency systems.
The goal of this research topic is to address the challenges and opportunities presented by memristive technology. We aim to evaluate new physical methods and innovative material design, and assess novel computing methods. The scope of this research topic is to discuss different memristors from redox-based devices and electrochemical memories to thermochemical devices, interfacial metal oxide, and nano ionic-based memories. The main focus of this SI is on conduction mechanisms, the reliability of memristors, scaling down beyond nanotechnology limitations, fabrication methods, artificial synapses, neuromorphic and RF/mmWave applications.
Original research articles, review articles, perspective articles, and short reviews addressing novel challenges and opportunities are welcomed. The research areas of the submitted papers should fall into the following categories:
- Theory, simulation, and modelling of memristors;
- Novel fabrication methods (bottom-up and top-down methods) and physical phenomena;
- Memristive technology for high frequency applications.
- Structural and electrical characterisations;
- Materials including 2D materials, phase change materials, ferroelectric materials, perovskites, and metal oxides;
- Novel artificial synapses and memristive devices;
- Conduction mechanism in memristors including dynamic evolution of conductive filaments;
- Organic materials and carbon-based memristors and synapses;
- Effect of moisture and device size (dimension) on physical properties;
- Applications of memristors in neuromorphic computing and artificial intelligence.
- Applications of memristive components in high frequency systems and circuits, spanning telecommunications, radar, etc.
The scope of this Special Issue is to attract research outcomes on various memristive systems for future storage and computing including materials, device processes, cell and array structures, circuits, and architecture. Contributions related to challenges on nanofabrication, empirical models, and neuromorphic applications are welcomed as well.
We look forward to receiving your contributions.
Dr. Ivo Marković
Prof. Dr. Milka Potrebic
Guest Editors
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Keywords
- memristor
- neuromorphic computing
- artificial synapse
- nanoelectronic device
- flexible memristor
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