GaN Technology’s Role in Next Generation Electronics Circuits and Power Applications

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Circuit and Signal Processing".

Deadline for manuscript submissions: 17 June 2025 | Viewed by 429

Special Issue Editors


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Guest Editor
Dipartimento di Ingegneria Elettrica Elettronica e Informatica (DIEEI), Università di Catania, 95125 Catania, Italy
Interests: radio frequency (RF) and millimeter wave (mm-wave) integrated circuits/systems for wireless communication systems
Special Issues, Collections and Topics in MDPI journals

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Guest Editor
Dipartimento di Ingegneria Elettrica Elettronica e Informatica (DIEEI), Università di Catania, 95125 Catania, Italy
Interests: silicon and GaN analog circuits: compensation techniques; voltage regulators; bandgap voltage references; low-voltage circuits and device modeling

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Guest Editor
Dipartimento di Ingegneria Elettrica Elettronica e Informatica (DIEEI), Università di Catania, 95125 Catania, Italy
Interests: electrical machines; drives and power converters for e-mobility (silicon, GaN and SiC technologies)
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

This Special Issue will address advances in GaN technology and its applications in different fields of power electronics. In particular, the aim is to present the latest achievements in developing advanced power electronic technology and materials and GaN solutions for power converters. 

This Special Issue will include (but is not limited to) the following topics:

  1. GaN-based materials and heterostructures growth and characterization;
  2. Device processing steps (contacts, dielectrics, etching, etc.);
  3. GaN-based devices (advanced lateral HEMTs for power and RF applications, vertical GaN-based devices and  packaging, etc.);
  4. Devices characterization, modeling and reliability;
  5. GaN systems: modeling, testing and reliability;
  6. Intelligent and integrated GaN solutions (systems in package and monolithic formats); 
  7. Advanced topologies and control strategies for GaN-based power converters (automotive, renewable energy, industrial and consumer electronics, etc.).

A selection of the best contributions will be invited to present the work at the "International Workshop of the EU Project GaN4AP" that the University of Catania is organizing in February 2025 in Catania. The workshop will be a unique opportunity for bringing together leading specialists working in different areas of gallium nitride (GaN) technology, both from universities, research centers and industries. 

Dr. Egidio Ragonese
Prof. Dr. Gianluca Giustolisi
Prof. Dr. Giacomo Scelba
Guest Editors

Manuscript Submission Information

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Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • GaN Systems
  • GaN technology
  • power electronic technology and materials
  • GaN solutions for power converters

Published Papers

This special issue is now open for submission.
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