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Electronics
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10th Anniversary of Electronics: Recent Advances in Semiconductor Devices
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10th Anniversary of Electronics: Recent Advances in Semiconductor Devices

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: closed (31 December 2021) | Viewed by 10848

Special Issue Editors

Prof. Dr. Tae-Yeon Seong

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Guest Editor
Department of Materials Science and Engineering/Department of Nanophotonics, Korea University, Seoul 02841, Korea
Interests: Integration of HEMT (TFT) and µ-LEDs; LEDs: Contact Technology, Device processing, and Packaging, Reliability; Transparent conducting oxides; Nano-materials and device applications; Characterization of semiconducting and electronic materials and devices
Prof. Dr. Slawomir Sujecki

E-Mail Website
Guest Editor
Department of Telecommunications and Teleinformatics, Wroclaw University of Technology, Wybrzeze, Wyspianskiego 27, 50-370 Wroclaw, Poland
Interests: mid infrared photonics; light sources; modelling and design of photonic devices; DWDM systems
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Dong-Seon Lee

E-Mail Website
Guest Editor
Solid State Lighting Lab, School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
Interests: LEDs and µ-LEDs; Compound semiconductor device fabrication; Growth and fabrication of III-Nitrides; Optical and Structural Properties of Nitride Materials; Compound-semiconductor-based thin film solar cells
Prof. Dr. Noel Rodriguez

E-Mail Website
Guest Editor
Department of Electronics and Computer Technology, University of Granada, 18071 Granada, Spain
Interests: nanotechnology; sensors; electrical characterization; nanoelectronics; laser-induced nanomaterials; energy harvesting; energy conversion; flexible electronics; memristive devices
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Changhwan Shin

E-Mail Website
Guest Editor
School of Electrical Engineering, College of Engineering, Korea University, Seoul, Korea
Interests: silicon semiconductor devices; cache memory design; ultra-low-voltage device design; SRAM yield enhancement
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

It has now been ten years since the first paper was published in Electronics back in 2011. With many highs and many lows, we went through a rock road, and we are proud to have reached this very important milestone of the 10th anniversary of the journal. To celebrate this momentous occasion, a Special Issue is being prepared which invites both members of the Editorial Board and outstanding renowned authors, including past editors and authors, to submit their high-quality works on the topic of “Recent Advances in Semiconductor Devices".

Topics of interest include but are not limited to the following:

- Semiconductor device applications
- Fabrication processing
- Simulation (theory)
- Quantum devices
- Hybrid electronic and semiconductor devices
- Semiconductor devices for energy
- Flexible devices
- Semiconductor material and device physics
- 2D materials for devices
- New technology for semiconductor devices
- Semiconductor optoelectronic and photonic devices and processing

Prof. Dr. Tae-Yeon Seong
Prof. Slawomir Sujecki
Prof. Dr. Dong-Seon Lee
Prof. Dr. Noel Rodriguez
Prof. Dr. Changhwan Shin
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Published Papers (4 papers)

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Research

15 pages, 4044 KiB  
Article
Optimization of Self-Heating Driven Leakage Current Properties of Gate-All-Around Field-Effect Transistors Using Neural Network Modeling and Genetic Algorithm
by Chuntaek Park and Ilgu Yun
Electronics 2021, 10(21), 2570; https://doi.org/10.3390/electronics10212570 - 21 Oct 2021
Cited by 1 | Viewed by 1959
Abstract
As the technology nodes of semiconductor devices have become finer and more complex, progressive scaling down has been implemented to achieve higher densities for electronic devices. Thus, three-dimensional (3D) channel field-effect transistors (FETs), such as fin-shaped FETs (FinFETs) and gate-all-around FETs (GAAFETs), have [...] Read more.
As the technology nodes of semiconductor devices have become finer and more complex, progressive scaling down has been implemented to achieve higher densities for electronic devices. Thus, three-dimensional (3D) channel field-effect transistors (FETs), such as fin-shaped FETs (FinFETs) and gate-all-around FETs (GAAFETs), have become popular as they have increased effective surface areas for the channels (Weff), owing to the scaling down strategy. These 3D channel FETs, which have completely covered channel structures with gate oxide and metal, are prone to the self-heating effect (SHE). The SHE is generally known to degrade the on-state drain current; however, when AC pulsed inputs are applied to these devices, the SHE also degrades the off-state leakage current during the off-phase of the pulse. In this study, an optimization methodology to minimize leakage current generation by the SHE is examined. Full article
(This article belongs to the Special Issue 10th Anniversary of Electronics: Recent Advances in Semiconductor Devices)
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9 pages, 3361 KiB  
Article
An Efficient 4H-SiC Photodiode for UV Sensing Applications
by Mohamed L. Megherbi, Hichem Bencherif, Lakhdar Dehimi, Elisa D. Mallemace, Sandro Rao, Fortunato Pezzimenti and Francesco G. Della Corte
Electronics 2021, 10(20), 2517; https://doi.org/10.3390/electronics10202517 - 15 Oct 2021
Cited by 8 | Viewed by 2252
Abstract
In this paper, we report experimental findings on a 4H-SiC-based p-i-n photodiode. The fabricated device has a p-type region formed by ion-implantation of aluminum (Al) in a nitrogen doped n-type layer. The dark reverse current density reaches 38.6 nA/cm2 at −10 V, [...] Read more.
In this paper, we report experimental findings on a 4H-SiC-based p-i-n photodiode. The fabricated device has a p-type region formed by ion-implantation of aluminum (Al) in a nitrogen doped n-type layer. The dark reverse current density reaches 38.6 nA/cm2 at −10 V, while the photocurrent density rises to 6.36 µA/cm2 at the same bias under λ = 315 nm ultraviolet (UV) radiation with an incident optical power density of 29.83 μW/cm2. At the wavelength of λ = 285 nm, the responsivity is maximum, 0.168 A/W at 0 V, and 0.204 A/W at −30 V, leading to an external quantum efficiency of 72.7 and 88.3%, respectively. Moreover, the long-term stability of the photodiode performances has been examined after exposing the device under test to several cycles of thermal stress, from 150 up to 350 °C and vice versa. The achieved results prove that the examined high-efficiency UV photodiode also has a stable responsivity if subjected to high temperature variations. The proposed device is fully compatible with the conventional production process of 4H-SiC components. Full article
(This article belongs to the Special Issue 10th Anniversary of Electronics: Recent Advances in Semiconductor Devices)
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8 pages, 2171 KiB  
Article
Improving Emission Uniformity of InGaN/GaN-Based Vertical LEDs by Using Reflective ITO/Ag n-Contact
by Woong-Sun Yum, Ji-Hyun Koo, Dae-Hee Lee, Young-Hoon Kim, Young-Kyu Jeong, Se-Yeon Jung, Sang-Youl Lee, Hwan-Hee Jeong and Tae-Yeon Seong
Electronics 2021, 10(8), 975; https://doi.org/10.3390/electronics10080975 - 19 Apr 2021
Cited by 1 | Viewed by 2057
Abstract
We investigated the effect of Ti/Al and ITO/Ag n-type contacts on the emission uniformity and light output of different chip-size vertical-geometry light-emitting diodes (VLEDs) for vehicle headlamp application. The forward voltage of the Ti/Al-based reference VLEDs decreased from 3.38 to 3.20 V at [...] Read more.
We investigated the effect of Ti/Al and ITO/Ag n-type contacts on the emission uniformity and light output of different chip-size vertical-geometry light-emitting diodes (VLEDs) for vehicle headlamp application. The forward voltage of the Ti/Al-based reference VLEDs decreased from 3.38 to 3.20 V at 1500 mA with increasing chip size from (1280 × 1000 µm2) to (1700 × 1700 µm2), whereas that of the ITO/Ag-based samples changed from 3.37 to 3.15 V. Regardless of chip size, the ITO/Ag-based samples revealed higher light output power than the reference samples. For example, the ITO/Ag-based samples (chip size of 1700 × 1700 µm2) exhibited 3.4% higher light output power at 1500 mA than the reference samples. The ITO/Ag samples underwent less degradation in the Wall-plug efficiency (WPE) than the reference sample. For instance, the ITO/Ag-based samples (1700 × 1700 µm2) gave 4.8% higher WPE at 1500 mA than the reference samples. The ITO/Ag-based samples illustrated more uniform emission than the Ti/Al-based sample. Both the reference and ITO/Ag-based samples underwent no degradation when operated at 1500 mA for 1000 h. Full article
(This article belongs to the Special Issue 10th Anniversary of Electronics: Recent Advances in Semiconductor Devices)
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14 pages, 686 KiB  
Article
Study of Quantized Hardware Deep Neural Networks Based on Resistive Switching Devices, Conventional versus Convolutional Approaches
by Rocío Romero-Zaliz, Eduardo Pérez, Francisco Jiménez-Molinos, Christian Wenger and Juan B. Roldán
Electronics 2021, 10(3), 346; https://doi.org/10.3390/electronics10030346 - 1 Feb 2021
Cited by 21 | Viewed by 3295
Abstract
A comprehensive analysis of two types of artificial neural networks (ANN) is performed to assess the influence of quantization on the synaptic weights. Conventional multilayer-perceptron (MLP) and convolutional neural networks (CNN) have been considered by changing their features in the training and inference [...] Read more.
A comprehensive analysis of two types of artificial neural networks (ANN) is performed to assess the influence of quantization on the synaptic weights. Conventional multilayer-perceptron (MLP) and convolutional neural networks (CNN) have been considered by changing their features in the training and inference contexts, such as number of levels in the quantization process, the number of hidden layers on the network topology, the number of neurons per hidden layer, the image databases, the number of convolutional layers, etc. A reference technology based on 1T1R structures with bipolar memristors including HfO2 dielectrics was employed, accounting for different multilevel schemes and the corresponding conductance quantization algorithms. The accuracy of the image recognition processes was studied in depth. This type of studies are essential prior to hardware implementation of neural networks. The obtained results support the use of CNNs for image domains. This is linked to the role played by convolutional layers at extracting image features and reducing the data complexity. In this case, the number of synaptic weights can be reduced in comparison to MLPs. Full article
(This article belongs to the Special Issue 10th Anniversary of Electronics: Recent Advances in Semiconductor Devices)
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