Steep-Switching Devices

Dear Colleagues,

The continuous scaling of transistors has significantly improved the device performance and density, but it has resulted in soaring-up power density in integrated circuits. To realize the hyper-connected society (smart cities), ultra-low-power devices for implementing all the infrastructures in smart cities are desperately needed. From this perspective, steep-switching devices such as tunnel FET, negative-capacitance FET, phase transition FET, NEM relays, and feedback FET have drawn a great deal of attention as the saviors for IC chips with ever-increasing power consumption. These devices can be implemented by changing the mechanism for current flow (e.g., band-to-band tunneling), or by exploiting exotic phenomena (e.g., negative capacitance effect). Furthermore, these devices bring with them infinite opportunities to change the world because the steep-switching concept can be applied not only to silicon transistors but also other devices like 2-D material devices for neuromorphic applications.

The main objective of this Special Issue is to accumulate prominent papers which unveil/propose various properties of steep-switching devices and alleviate critical issues from the devices. The interests of this Special Issue include, but are not limited to, the proposal of new materials and structures for these devices, circuit operation using these devices, and analysis/improvement of the performance and fabrication of these devices.

Prof. Dr. Changhwan Shin
Guest Editor

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