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Electronics
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Young Investigators in Electronics
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Young Investigators in Electronics

A special issue of Electronics (ISSN 2079-9292).

Deadline for manuscript submissions: closed (15 September 2024) | Viewed by 4254

Special Issue Editors

Dr. Houqiang Fu

E-Mail Website
Guest Editor
School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287, USA
Interests: III-nitrides/oxides; power electronics; optoelectronics; integrated photonics; MOCVD
Special Issues, Collections and Topics in MDPI journals
Dr. Kai Fu

E-Mail Website
Guest Editor
Department of Electrical and Computer Engineering, The University of Utah, Salt Lake City, UT 84112, USA
Interests: GaN; power electronics
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

This year marks the 75th Anniversary of the Transistor, which paved the way for modern-day electronics. Electronics have revolutionized how we live, work, and connect with the world, from communication, transportation, energy, computing, and healthcare to education. Young scientists and researchers have significantly contributed to the advancement of electronics.

To celebrate and highlight the accomplishments of young investigators in the electronics field, this Special Issue provides a platform for young scientists and researchers to publish their latest experimental and theoretical findings. The Special Issue covers a broad range of topics in electronics, from physics, material science, and devices to integrated circuits, packaging, and system design. The Special Issue aims to offer insights into the latest research and developments in electronics by young scientists and researchers and encourage and promote their scientific contributions and interdisciplinary collaborations.

The “Electronics 2024 Young Investigator Award” is related to this Special Issue. This prize will be given to one young investigator in recognition of their excellence in the field of electronics. All nominations will be assessed by an Award Evaluation Committee. The winner will receive a certificate, an award of 2000 CHF, and an opportunity to publish one paper as a corresponding author free of charge in Electronics in 2025 following peer review.

Dr. Houqiang Fu
Dr. Kai Fu
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

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Further information on MDPI's Special Issue polices can be found here.

Published Papers (2 papers)

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12 pages, 5501 KiB  
Article
Towards a State of Health Definition of Lithium Batteries through Electrochemical Impedance Spectroscopy
by Gabriele Patrizi, Fabio Canzanella, Lorenzo Ciani and Marcantonio Catelani
Electronics 2024, 13(8), 1438; https://doi.org/10.3390/electronics13081438 - 11 Apr 2024
Cited by 1 | Viewed by 1079
Abstract
In the era of Industry 4.0, achieving optimization in production and minimizing environmental impact has become vital. Energy management, particularly in the context of smart grids, plays a crucial role in ensuring sustainability and efficiency. Lithium-ion batteries have emerged as a leading technology [...] Read more.
In the era of Industry 4.0, achieving optimization in production and minimizing environmental impact has become vital. Energy management, particularly in the context of smart grids, plays a crucial role in ensuring sustainability and efficiency. Lithium-ion batteries have emerged as a leading technology for energy storage due to their versatility and performances. However, accurately assessing their State of Health (SOH) is essential for maintaining grid reliability. While discharge capacity and internal resistance (IR) are commonly used SOH indicators, battery impedance also offers valuable insights into aging degradation. This article explores the use of Electrochemical Impedance Spectroscopy (EIS) to define the SOH of lithium batteries. By analyzing impedance spectra at different frequencies, a comprehensive understanding of battery degradation is obtained. A life cycle analysis is conducted on cylindrical Li–Mn batteries under various discharge conditions, utilizing EIS measurements and an Equivalent Circuit Model (ECM). This study highlights the differential effects of aging on battery characteristics, emphasizing the variations at different life stages and the behavior changes on each region of the impedance spectrum. Furthermore, it demonstrates the efficacy of EIS and the advantages of this technique compared to the solely IR measurements used in tracking SOH over time. This research contributes to advancing the understanding of lithium battery degradation and underscores the importance of EIS in defining their State of Health for Smart Grids applications. Full article
(This article belongs to the Special Issue Young Investigators in Electronics)
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Review

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28 pages, 14874 KiB  
Review
β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances
by Dinusha Herath Mudiyanselage, Bingcheng Da, Jayashree Adivarahan, Dawei Wang, Ziyi He, Kai Fu, Yuji Zhao and Houqiang Fu
Electronics 2024, 13(7), 1234; https://doi.org/10.3390/electronics13071234 - 27 Mar 2024
Cited by 1 | Viewed by 2522
Abstract
During the past decade, Gallium Oxide (Ga2O3) has attracted intensive research interest as an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such as a large bandgap of 4.5–4.9 eV, a high critical electric field of ~8 MV/cm, and [...] Read more.
During the past decade, Gallium Oxide (Ga2O3) has attracted intensive research interest as an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such as a large bandgap of 4.5–4.9 eV, a high critical electric field of ~8 MV/cm, and a high Baliga’s figure of merit (BFOM). Unipolar β-Ga2O3 devices such as Schottky barrier diodes (SBDs) and field-effect transistors (FETs) have been demonstrated. Recently, there has been growing attention toward developing β-Ga2O3-based heterostructures and heterojunctions, which is mainly driven by the lack of p-type doping and the exploration of multidimensional device architectures to enhance power electronics’ performance. This paper will review the most recent advances in β-Ga2O3 heterostructures and heterojunctions for power electronics, including NiOx/β-Ga2O3, β-(AlxGa1−x)2O3/β-Ga2O3, and β-Ga2O3 heterojunctions/heterostructures with other wide- and ultra-wide-bandgap materials and the integration of two-dimensional (2D) materials with β-Ga2O3. Discussions of the deposition, fabrication, and operating principles of these heterostructures and heterojunctions and the associated device performance will be provided. This comprehensive review will serve as a critical reference for researchers engaged in materials science, wide- and ultra-wide-bandgap semiconductors, and power electronics and benefits the future study and development of β-Ga2O3-based heterostructures and heterojunctions and associated power electronics. Full article
(This article belongs to the Special Issue Young Investigators in Electronics)
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