Advanced Materials for Intelligent Electronics

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: 15 October 2024 | Viewed by 1420

Special Issue Editor


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Guest Editor
Department of Semiconductor Systems Engineering, Sejong University, Gwangjin-gu, Seoul 05006, Republic of Korea
Interests: next-generation non-volatile memory device; cross-bar array and artificial synaptic device; field effect transistors; synthesis of nano materials

Special Issue Information

Dear Colleagues,

Over the past few years, there has been considerable interest from both academia and industry in advanced materials for intelligent electronics.

Advanced materials hold great significance in the fields of intelligent electronics, such as nanoelectronics and nanophotonics, primarily due to their exceptional properties. These unique characteristics make smart materials well-suited for various advanced technologies.

With their remarkable properties, advanced materials have emerged as a cutting-edge research area, paving the way for numerous applications in diverse fields such as energy, environment, sensors, and biomedicine. These materials have brought about new possibilities and opportunities in these areas.

This Topic will focus on recent advancements in a novel category of advanced materials. These materials comprise nanoparticles, such as semiconductor nanoparticles/quantum dots, metal nanoparticles, metal oxide nanoparticles, carbon nanotubes, and two-dimensional nanostructured materials, such as graphene, hexagonal boron nitride, MXene, transition metal dichalcogenides, and perovskites. We encourage the submission of high-quality original research and review articles in this field.

The topics of interest encompass a wide range and are not limited to the following:

  • Novel synthesis and fabrication techniques of functional materials.
  • Characterization and evaluation of chemical and physical properties of materials.
  • Applications of the materials in energy-related technologies (e.g., solar cells, batteries).
  • The advanced materials for environmental remediation and pollution control.
  • The advanced materials for sensing and detection applications.
  • Biomedical applications of nanocomposite materials.
  • The materials for advanced electronic and optoelectronic devices.
  • Multifunctional nanocomposites for diverse applications.
  • Theoretical modeling and simulation studies of advanced materials.
  • Advances in nanocomposite coatings and surface modifications.
  • The advanced materials for additive manufacturing and 3D printing.
  • Challenges and future perspectives in the field of advanced materials for intelligent electronics.

These topics serve as a general guideline, and contributions related to other relevant aspects of advanced materials for intelligent electronics are also welcome.

Dr. Hyojung Kim
Guest Editor

Manuscript Submission Information

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Keywords

  • advanced materials
  • novel synthesis and fabrication techniques
  • characterization of materials
  • multifunctional nanocomposites
  • advanced electronic and optoelectronic devices
  • theoretical modeling and simulation
  • additive manufacturing and 3D printing

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Published Papers (2 papers)

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Research

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15 pages, 13354 KiB  
Article
Designing Multifunctional Multiferroic Composites for Advanced Electronic Applications
by Lilian Nunes Pereira, Julio Cesar Agreira Pastoril, Gustavo Sanguino Dias, Ivair Aparecido dos Santos, Ruyan Guo, Amar S. Bhalla and Luiz Fernando Cotica
Electronics 2024, 13(12), 2266; https://doi.org/10.3390/electronics13122266 - 9 Jun 2024
Viewed by 565
Abstract
This paper presents a novel approach for the fabrication of magnetoelectric composites aimed at enhancing cross-coupling between electrical and magnetic phases for potential applications in intelligent sensors and electronic components. Unlike previous methodologies known for their complexity and expense, our method offers a [...] Read more.
This paper presents a novel approach for the fabrication of magnetoelectric composites aimed at enhancing cross-coupling between electrical and magnetic phases for potential applications in intelligent sensors and electronic components. Unlike previous methodologies known for their complexity and expense, our method offers a simple and cost-effective assembly process conducted at room temperature, preserving the original properties of the components and avoiding undesired phases. The composites, composed of PZT fibers, cobalt (CoFe2O4), and a polymeric resin, demonstrate the uniform distribution of PZT-5A fibers within the cobalt matrix, as demonstrated by scanning electron microscopy. Detailed morphological analyses reveal the interface characteristics crucial for determining overall performance. Dielectric measurements indicate stable behaviors, particularly when PZT-5A fibers are properly poled, showcasing potential applications in sensors or medical devices. Furthermore, H-dependence studies illustrate strong magnetoelectric interactions, suggesting promising avenues for enhancing coupling efficiency. Overall, this study lays the basic work for future optimization of composite composition and exploration of its long-term stability, offering valuable insights into the potential applications of magnetoelectric composites in various technological domains. Full article
(This article belongs to the Special Issue Advanced Materials for Intelligent Electronics)
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Review

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23 pages, 7018 KiB  
Review
2D and Quasi-2D Halide Perovskite-Based Resistive Switching Memory Systems
by Hyojung Kim, Daijoon Hyun, Muhammad Hilal, Zhicheng Cai and Cheon Woo Moon
Electronics 2024, 13(17), 3572; https://doi.org/10.3390/electronics13173572 - 8 Sep 2024
Viewed by 514
Abstract
Resistive switching (RS) memory devices are gaining recognition as data storage devices due to the significant interest in their switching material, Halide perovskite (HP). The electrical characteristics include hysteresis in its current–voltage (IV) relationship. It can be attributed to [...] Read more.
Resistive switching (RS) memory devices are gaining recognition as data storage devices due to the significant interest in their switching material, Halide perovskite (HP). The electrical characteristics include hysteresis in its current–voltage (IV) relationship. It can be attributed to the production and migration of defects. This property allows HPs to be used as RS materials in memory devices. However, 3D HPs are vulnerable to moisture and the surrounding environment, making their devices more susceptible to deterioration. The potential of two-dimensional (2D)/quasi-2D HPs for optoelectronic applications has been recognized, making them a viable alternative to address current restrictions. Two-dimensional/quasi-2D HPs are created by including extended organic cations into the ABX3 frameworks. By adjusting the number of HP layers, it is possible to control the optoelectronic properties to achieve specific features for certain applications. This article presents an overview of 2D/quasi-2D HPs, including their structures, binding energies, and charge transport, compared to 3D HPs. Next, we discuss the operational principles, RS modes (bipolar and unipolar switching), in RS memory devices. Finally, there have been notable and recent breakthroughs in developing RS memory systems using 2D/quasi-2D HPs. Full article
(This article belongs to the Special Issue Advanced Materials for Intelligent Electronics)
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