Nanoelectronic Materials, Devices and Modeling

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Microelectronics".

Deadline for manuscript submissions: closed (31 October 2018) | Viewed by 137963

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Special Issue Editors

College of Engineering and Computing, George Mason University, Fairfax, VA 22030, USA
Interests: wide-bandgap semiconductor; sensors; nanoelectronics; artificial intelligence
Special Issues, Collections and Topics in MDPI journals
School of Microelectronics, Fudan University, 220 Handan Rd, Shanghai 200433, China
Interests: 2D chalcogenide materials; nanowire devices; topological insulator; non-volatile memory; molecular electronics

Special Issue Information

Dear Colleagues,

CMOS scaling is approaching the fundamental physical limits. This Special Issue aims to present scholarly papers that address the need for new nanoelectronic materials and devices to extend and/or replace current electronic devices and circuitry. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics and renewable energy. With the emerging need for various wearable and portable electronics, flexible devices and smart circuits with multiple functions and interdisciplinary aspects are welcome in this issue. In addition, the integration and application of new electronic devices in a stand-alone system will be one of the important topics. This Special Issue aims to solicit original research papers, as well as review articles, with a focus on theoretical approaches, numerical simulations and experimental studies on nanoelectronic materials and devices for various novel applications.

Potential topics include, but are not limited to, the following:

  • Synthesis of functional materials
  • Design and fabrication of nanoelectronic devices
  • Advanced transistor technologies
  • Photonics, optoelectronic sensors, light emitting devices
  • Chemical sensors, gas sensors, biosensors
  • Renewable energy, energy harvesting, energy storage
  • Two-dimensional materials, such as MoS2, WSe2 and so on.
  • Graphene, double-layer graphene and graphene oxides
  • Nanowires and Nanotubes
  • III-V semiconductors and Ge materials and devices
  • Reliability of advanced nanoelectronic devices
  • Device modeling and numerical simulation
  • First-principle calculation of novel materials and devices
  • Progress in modeling methodology and approaches
  • Application of electronic devices in a system, such as wearable electronics and unmanned aerial/ground vehicles.

Prof. Qiliang Li
Prof. Hao Zhu
Guest Editors

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Synthesis of functional materials
  • Design and fabrication of nanoelectronic devices
  • Advanced transistor technologies
  • Photonics, optoelectronic sensors, light emitting devices
  • Chemical sensors, gas sensors, biosensors
  • Renewable energy, energy harvesting, energy storage
  • Two-dimensional materials, such as MoS2, WSe2 and so on.
  • Graphene, double-layer graphene and graphene oxides
  • Nanowires and Nanotubes
  • III-V semiconductors and Ge materials and devices
  • Reliability of advanced nanoelectronic devices
  • Device modeling and numerical simulation
  • First-principle calculation of novel materials and devices
  • Progress in modeling methodology and approaches
  • Application of electronic devices in a system, such as wearable electronics and unmanned aerial/ground vehicles

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Published Papers (20 papers)

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3 pages, 144 KB  
Editorial
Nanoelectronic Materials, Devices and Modeling: Current Research Trends
Electronics 2019, 8(5), 564; https://doi.org/10.3390/electronics8050564 - 22 May 2019
13 pages, 3852 KB  
Article
Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure
Electronics 2019, 8(2), 241; https://doi.org/10.3390/electronics8020241 - 20 Feb 2019
8 pages, 1652 KB  
Article
Electron Affinity and Bandgap Optimization of Zinc Oxide for Improved Performance of ZnO/Si Heterojunction Solar Cell Using PC1D Simulations
Electronics 2019, 8(2), 238; https://doi.org/10.3390/electronics8020238 - 20 Feb 2019
8 pages, 3075 KB  
Article
Nano-Particle VO2 Insulator-Metal Transition Field-Effect Switch with 42 mV/decade Sub-Threshold Slope
Electronics 2019, 8(2), 151; https://doi.org/10.3390/electronics8020151 - 1 Feb 2019
15 pages, 4816 KB  
Article
A 2.5-GHz 1-V High Efficiency CMOS Power Amplifier IC with a Dual-Switching Transistor and Third Harmonic Tuning Technique
Electronics 2019, 8(1), 69; https://doi.org/10.3390/electronics8010069 - 8 Jan 2019
14 pages, 771 KB  
Article
Determination of Complex Conductivity of Thin Strips with a Transmission Method
Electronics 2019, 8(1), 21; https://doi.org/10.3390/electronics8010021 - 24 Dec 2018
6 pages, 3441 KB  
Article
Partial Isolation Type Saddle-FinFET(Pi-FinFET) for Sub-30 nm DRAM Cell Transistors
Electronics 2019, 8(1), 8; https://doi.org/10.3390/electronics8010008 - 21 Dec 2018
11 pages, 2965 KB  
Article
AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer
Electronics 2018, 7(12), 416; https://doi.org/10.3390/electronics7120416 - 10 Dec 2018
12 pages, 2342 KB  
Article
Modeling of 2DEG characteristics of InxAl1−xN/AlN/GaN-Based HEMT Considering Polarization and Quantum Mechanical Effect
Electronics 2018, 7(12), 410; https://doi.org/10.3390/electronics7120410 - 8 Dec 2018
20 pages, 3130 KB  
Review
A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability
Electronics 2018, 7(12), 377; https://doi.org/10.3390/electronics7120377 - 3 Dec 2018
11 pages, 2983 KB  
Article
Optimization of Line-Tunneling Type L-Shaped Tunnel Field-Effect-Transistor for Steep Subthreshold Slope
Electronics 2018, 7(11), 275; https://doi.org/10.3390/electronics7110275 - 24 Oct 2018
17 pages, 3761 KB  
Article
A New Method of the Pattern Storage and Recognition in Oscillatory Neural Networks Based on Resistive Switches
Electronics 2018, 7(10), 266; https://doi.org/10.3390/electronics7100266 - 22 Oct 2018
8 pages, 1547 KB  
Article
Ultraviolet Irradiation Effects on luminescent Centres in Bismuth-Doped and Bismuth-Erbium Co-Doped Optical Fibers via Atomic Layer Deposition
Electronics 2018, 7(10), 259; https://doi.org/10.3390/electronics7100259 - 18 Oct 2018
11 pages, 3066 KB  
Article
High Performance Graphene-Based Electrochemical Double Layer Capacitors Using 1-Butyl-1-methylpyrrolidinium tris (pentafluoroethyl) trifluorophosphate Ionic Liquid as an Electrolyte
Electronics 2018, 7(10), 229; https://doi.org/10.3390/electronics7100229 - 2 Oct 2018
9 pages, 11341 KB  
Article
Simulation Analysis in Sub-0.1 μm for Partial Isolation Field-Effect Transistors
Electronics 2018, 7(10), 227; https://doi.org/10.3390/electronics7100227 - 2 Oct 2018
24 pages, 5718 KB  
Review
Device Applications of Synthetic Topological Insulator Nanostructures
Electronics 2018, 7(10), 225; https://doi.org/10.3390/electronics7100225 - 1 Oct 2018
10 pages, 1579 KB  
Article
Multichannel and Multistate All-Optical Switch Using Quantum-Dot and Sample-Grating Semiconductor Optical Amplifier
Electronics 2018, 7(9), 166; https://doi.org/10.3390/electronics7090166 - 29 Aug 2018
9 pages, 1783 KB  
Article
Analog Memristive Characteristics and Conditioned Reflex Study Based on Au/ZnO/ITO Devices
Electronics 2018, 7(8), 141; https://doi.org/10.3390/electronics7080141 - 8 Aug 2018
9 pages, 2380 KB  
Article
CMOS Compatible Bio-Realistic Implementation with Ag/HfO2-Based Synaptic Nanoelectronics for Artificial Neuromorphic System
Electronics 2018, 7(6), 80; https://doi.org/10.3390/electronics7060080 - 25 May 2018
14 pages, 4386 KB  
Article
A Hierarchical Vision-Based UAV Localization for an Open Landing
Electronics 2018, 7(5), 68; https://doi.org/10.3390/electronics7050068 - 11 May 2018
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