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Novel Semiconductor Devices and Nanomaterials for Energy, Power and High-Frequency...
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Novel Semiconductor Devices and Nanomaterials for Energy, Power and High-Frequency Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Energy Materials".

Deadline for manuscript submissions: closed (20 June 2024) | Viewed by 4025

Special Issue Editors

Prof. Dr. Helmut Baumgart

E-Mail Website
Guest Editor
Electrical and Computer Engineering, Old Dominion University, Norfolk, UV 23529, USA
Interests: nanoelectronics; sensors; wafer bonding; thermoelectronics; atomic layer deposition of semiconducting films
Dr. Qiliang Li

E-Mail Website
Guest Editor
College of Engineering and Computing, George Mason University, Fairfax, VA 22030, USA
Interests: wide-bandgap semiconductor; sensors; nanoelectronics; artificial intelligence
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

There is a continuous quest in novel semiconductors and nanomaterials to address the current challenges in energy efficient, high-power, and high-frequency devices. The integration of new semiconductor materials into conventional devices and circuits offers unique advantages, which often lead to significant breakthroughs.  The objective of this Special Issue of Materials is to report the novel electronics concepts and device designs based on new semiconductors and nanomaterials. Topics of interest include, but are not limited to, the following:

  • Semiconductor materials for renewable energy;
  • Device designs for energy efficient electronics;
  • New wide-bandgap semiconductors for high power;
  • Integration of nanomaterials for electronics and photonics;
  • New device concepts for energy harvesting;
  • Nanoscale semiconductor field effect transistors;
  • Semiconductor and nanomaterials for THz electronics;
  • Diamond-based electronics;
  • Ga2O3 and GaN devices for high-power and high-frequency applications;
  • Semiconducting Telluride and Selenide films for thermoelectric applications;
  • Metal–organic frameworks as semiconductors.

Prof. Dr. Helmut Baumgart
Dr. Qiliang Li
Guest Editors

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Keywords

  • wide-bandgap semiconductors
  • power electronics
  • two-dimensional materials
  • energy conversion
  • solar cells
  • sustainable electronics
  • RF electronics
  • rectifier diodes
  • field effect transistors

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Published Papers (2 papers)

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Research

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13 pages, 9090 KiB  
Article
Design and Simulation of Tunneling Diodes with 2D Insulators for Rectenna Switches
by Evelyn Li, Parameswari Raju and Erhai Zhao
Materials 2024, 17(4), 953; https://doi.org/10.3390/ma17040953 - 19 Feb 2024
Cited by 1 | Viewed by 1562
Abstract
Rectenna is the key component in radio-frequency circuits for receiving and converting electromagnetic waves into direct current. However, it is very challenging for the conventional semiconductor diode switches to rectify high-frequency signals for 6G telecommunication (>100 GHz), medical detection (>THz), and rectenna solar [...] Read more.
Rectenna is the key component in radio-frequency circuits for receiving and converting electromagnetic waves into direct current. However, it is very challenging for the conventional semiconductor diode switches to rectify high-frequency signals for 6G telecommunication (>100 GHz), medical detection (>THz), and rectenna solar cells (optical frequencies). Such a major challenge can be resolved by replacing the conventional semiconductor diodes with tunneling diodes as the rectenna switches. In this work, metal–insulator–metal (MIM) tunneling diodes based on 2D insulating materials were designed, and their performance was evaluated using a comprehensive simulation approach which includes a density-function theory simulation of 2D insulator materials, the modeling of the electrical characteristics of tunneling diodes, and circuit simulation for rectifiers. It is found that novel 2D insulators such as monolayer TiO2 can be obtained by oxidizing sulfur-metal layered materials. The MIM diodes based on such insulators exhibit fast tunneling and excellent current rectifying properties. Such tunneling diodes effectively convert the received high-frequency electromagnetic waves into direct current. Full article
(This article belongs to the Special Issue Novel Semiconductor Devices and Nanomaterials for Energy, Power and High-Frequency Applications)
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Review

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43 pages, 24810 KiB  
Review
A Review of Diamond Materials and Applications in Power Semiconductor Devices
by Feiyang Zhao, Yongjie He, Bin Huang, Tianyi Zhang and Hao Zhu
Materials 2024, 17(14), 3437; https://doi.org/10.3390/ma17143437 - 11 Jul 2024
Viewed by 2018
Abstract
Diamond is known as the ultimate semiconductor material for electric devices with excellent properties such as an ultra-wide bandgap (5.47 eV), high carrier mobility (electron mobility 4000 cm2/V·s, hole mobility 3800 cm2/V·s), high critical breakdown electric field (20 MV/cm), [...] Read more.
Diamond is known as the ultimate semiconductor material for electric devices with excellent properties such as an ultra-wide bandgap (5.47 eV), high carrier mobility (electron mobility 4000 cm2/V·s, hole mobility 3800 cm2/V·s), high critical breakdown electric field (20 MV/cm), and high thermal conductivity (22 W/cm·K), showing good prospects in high-power applications. The lack of n-type diamonds limits the development of bipolar devices; most of the research focuses on p-type Schottky barrier diodes (SBDs) and unipolar field-effect transistors (FETs) based on terminal technology. In recent years, breakthroughs have been made through the introduction of new structures, dielectric materials, heterogeneous epitaxy, etc. Currently, diamond devices have shown promising applications in high-power applications, with a BV of 10 kV, a BFOM of 874.6 MW/cm2, and a current density of 60 kA/cm2 already realized. This review summarizes the research progress of diamond materials, devices, and specific applications, with a particular focus on the development of SBDs and FETs and their use in high-power applications, aiming to provide researchers with the relevant intuitive parametric comparisons. Finally, the paper provides an outlook on the parameters and development directions of diamond power devices. Full article
(This article belongs to the Special Issue Novel Semiconductor Devices and Nanomaterials for Energy, Power and High-Frequency Applications)
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