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Optimal Design of Power Converters II
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Optimal Design of Power Converters II

A special issue of Energies (ISSN 1996-1073). This special issue belongs to the section "F3: Power Electronics".

Deadline for manuscript submissions: closed (21 March 2023) | Viewed by 2237

Special Issue Editor

Prof. Dr. Byoung Kuk Lee

E-Mail Website
Guest Editor
Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of Korea
Interests: onboard chargers and wireless power transfer chargers for electric vehicles; BMS algorithms; energy storage systems; hybrid renewable energy systems; induction heating systems for home appliances and industry applications; modeling and simulation; power electronics
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Topologies and control algorithms for power converters have been actively developed and regarded as the core technology in various industry applications such as telecommunication, mobiles, electric vehicles, railway and high-speed trains, home appliances, induction heating systems, plasma generators, renewable energies, energy storage systems, robots, drones, and so on.

With the help of wide bandgap (WBG) power semiconductor switching devices such as SiC and GaN devices in recent times, the dramatic enhancement of power density and efficiency of power converters has become the main issue, resulting in the opening a new era of its applications. In order to meet this recent requirement, the stable operation of WBG devices is being actively researched, and the design of heat dissipation systems and system integration along with passive components are also main research issues. In particular, in order to meet the high power density requirement, conventional high-frequency transformers (HFTRs) and inductors are replaced by planar typed ones, and studies of the design of planar type HFTRs and inductors considering stray capacitance are being reported.

Therefore, this Special Issue focuses on the emerging technologies to meet the recent requirements of power converters for various industry applications, including the following nonexclusive topics:

  • Topologies and control algorithms for high efficiency
  • Design approaches for high power density
  • Design of gate drive circuits, including short circuit protection for WBG devices
  • Design procedures of planar typed transformers and inductors
  • Heat dissipation systems and system integration, including modeling and simulation techniques

Prof. Dr. Byoung Kuk Lee
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Energies is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • high efficiency and high power density
  • topology and control algorithm
  • wide bandgap devices
  • gate drive circuit
  • planar typed transformer and inductor
  • heat dissipation
  • system integration
  • modeling and simulation

Published Papers (2 papers)

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Research

28 pages, 10156 KiB  
Article
A Turn-Ratio-Changing Half-Bridge CLLC DC–DC Bidirectional Battery Charger Using a GaN HEMT
by Yueh-Tsung Shieh, Chih-Chiang Wu, Shyr-Long Jeng, Ching-Yao Liu, Shiang-Yu Hsieh, Chi-Chun Haung, Wen-Yuh Shieh, Wei-Hua Chieng and Edward-Yi Chang
Energies 2023, 16(16), 5928; https://doi.org/10.3390/en16165928 - 10 Aug 2023
Cited by 1 | Viewed by 980
Abstract
This paper presents a 250 kHz bidirectional battery charger circuit using a GaN HEMT. The charger is subjected to a high-/low-side constant voltage at 200 V/20 V. The charger circuit is a hybrid of the LLC and flyback circuit topologies. Both the power [...] Read more.
This paper presents a 250 kHz bidirectional battery charger circuit using a GaN HEMT. The charger is subjected to a high-/low-side constant voltage at 200 V/20 V. The charger circuit is a hybrid of the LLC and flyback circuit topologies. Both the power output analysis and efficiency control of this circuit are simplified when the magnetization current is minimized using the low-resistance GaN HEMT. The switching frequency is controlled to match the series resonance in a way that is analogous to conventional LLC circuit controls, while the duty ratio that determines the power output and the dead time, which determines the zero voltage switching, is controlled in an analogous manner to the flyback circuit control. The charging and discharging modes were altered by applying a double-throw relay that changes the transformer turn ratio, which is different from conventional LLC designs using the switching frequency adjustment. A nominal turn ratio with Np = 35 and Ns = 3.5 for a 200 V/20 V converter can only produce an internal series resonance with no current flowing in any charging direction. The proposed circuit using a transformer with multiple windings (Np = 35, Ns,F = 4, and Ns,R = 3) was fabricated to deliver 125 W output power from the power grid battery to the vehicle battery in the forward (charging) mode and 90 W in the reverse (discharging) mode. The conversion efficiency was calculated to be as high as 97% in the forward mode and 95% in the reverse mode. The high conversion efficiency is due to the characteristics of the GaN HEMT, including low resistive and switching losses. The equations derived in this paper associate these losses with the series resonant frequency and power conversion rate, which highlight the advantages of using a GaN HEMT in this CLLC design. Full article
(This article belongs to the Special Issue Optimal Design of Power Converters II)
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21 pages, 6742 KiB  
Article
Influence of Parasitic Elements and Operating Conditions of Semiconductor Switches on Power Losses and the Junction Temperature of These Switches
by Krzysztof Górecki
Energies 2023, 16(15), 5803; https://doi.org/10.3390/en16155803 - 4 Aug 2023
Viewed by 951
Abstract
This article presents the results of computer analysis of selected switching networks. In these analyses, the influence of selected parasitic components of electronic switches on the total and active power losses in these switches is considered. Analyses are performed using the SPICE software [...] Read more.
This article presents the results of computer analysis of selected switching networks. In these analyses, the influence of selected parasitic components of electronic switches on the total and active power losses in these switches is considered. Analyses are performed using the SPICE software for two models of semiconductor switches: an ideal switch with RC parasitic components and the SPICE model of an IGBT. The influence of parasitic capacitances and resistances of these devices operating with the control signal of different parameters values on the total and active power dissipated in these switches is analyzed. On the basis of the obtained computations the average and peak-to-peak values of the junction temperature of electronic switches at the steady state are calculated using a compact thermal model. It is shown that parasitic elements visibly influence waveforms of the active and total power. It is proved that the simplified model using the total power in computations of the junction temperature makes it possible to obtain a high accuracy of computations only in a situation when the transistor operates with a resistive load. For an inductive load, such simplification can cause an unacceptably high computation error exceeding even 30%. Such an error is a result of big differences between the active and total powers during switching-on and switching-off processes. Full article
(This article belongs to the Special Issue Optimal Design of Power Converters II)
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