Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
2.8
3.1
Journals
Inorganics
Special Issues
Advanced Inorganic Semiconductor Materials, 2nd Edition
share announcement

Advanced Inorganic Semiconductor Materials, 2nd Edition

A special issue of Inorganics (ISSN 2304-6740). This special issue belongs to the section "Inorganic Materials".

Deadline for manuscript submissions: 30 November 2024 | Viewed by 4930

Special Issue Editors

Dr. Sake Wang

E-Mail Website
Guest Editor
College of Science, Jinling Institute of Technology, Nanjing 211169, China
Interests: 2D materials; environment; valleytronics; spintronics; topological insulators; electron transport; optoelectronics; photocatalyst
Special Issues, Collections and Topics in MDPI journals
Dr. Minglei Sun

E-Mail Website
Guest Editor
Department of Physics and NANOlab Center of Excellence, University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp, Belgium
Interests: nanomaterials; energy; photocatalyst; battery; first-principles calculations
Special Issues, Collections and Topics in MDPI journals
Dr. Nguyen Tuan Hung

E-Mail Website
Guest Editor
Frontier Research Institute for Interdisciplinary Sciences, Tohoku University, Sendai 980-0845, Miyagi, Japan
Interests: thermoelectricity; artificial muscles; nanomechanics; first-principles calculations
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The information technology revolution has been based decisively on the development and application of inorganic semiconductors. Conventional devices utilize bulk semiconductors in which charge carriers are free to move in all three spatial directions. For example, silicon forms the basis of most electronic devices, whilst compound semiconductors such as gallium arsenide (GaAs) are used for many optoelectronic applications. Recently, with the global boom in graphene research, more and more atomically thin two-dimensional (2D) inorganic materials have gained significant interest. Besides their promising applications in various ultrathin, transparent and flexible nanodevices, 2D materials could also serve as ideal models for establishing clear structure−property relationships in the field of solid-state physics and nanochemistry.

Despite the significant advances in the previous decade, opportunities and challenges remain in this field. This Special Issue aims to highlight the most current research and ideas in inorganic semiconductors, especially semiconductors based on 2D materials. In this Special Issue, original research articles and reviews are welcome. Research areas include, but are not limited to, the experimental fabrication and characterization, as well as the electronic, electrical, magnetic, optoelectronic and thermal properties of inorganic semiconductors.

As will be seen in this Special Issue, inorganic semiconductors exhibit a wide range of new and unusual properties, which can be employed to fabricate improved and novel electronic and electro-optical devices. We look forward to receiving your contributions.

Dr. Sake Wang
Dr. Minglei Sun
Dr. Nguyen Tuan Hung
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Inorganics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2700 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • information technology
  • inorganic semiconductors
  • two-dimensional materials
  • graphene
  • transition-metal dichalcogenides
  • fabrication
  • characterization
  • electronic properties
  • optoelectronic properties
  • thermal properties

Benefits of Publishing in a Special Issue

  • Ease of navigation: Grouping papers by topic helps scholars navigate broad scope journals more efficiently.
  • Greater discoverability: Special Issues support the reach and impact of scientific research. Articles in Special Issues are more discoverable and cited more frequently.
  • Expansion of research network: Special Issues facilitate connections among authors, fostering scientific collaborations.
  • External promotion: Articles in Special Issues are often promoted through the journal's social media, increasing their visibility.
  • e-Book format: Special Issues with more than 10 articles can be published as dedicated e-books, ensuring wide and rapid dissemination.

Further information on MDPI's Special Issue polices can be found here.

Related Special Issue

Published Papers (5 papers)

Download All Papers
Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:

Research

Jump to: Review

12 pages, 5416 KiB  
Article
Tunable Electronic and Magnetic Properties of 3d Transition Metal Atom-Intercalated Transition Metal Dichalcogenides: A Density Functional Theory Study
by Yujie Liu, Guang Yang, Zhiwen He, Yanbiao Wang, Xianghong Niu, Sake Wang, Yongjun Liu and Xiuyun Zhang
Inorganics 2024, 12(9), 237; https://doi.org/10.3390/inorganics12090237 - 29 Aug 2024
Viewed by 547
Abstract
Currently, intercalation has become an effective way to modify the fundamental properties of two-dimensional (2D) van der Waals (vdW) materials. Using density functional theory, we systematically investigated the structures and electronic and magnetic properties of bilayer transition metal dichalcogenides (TMDs) intercalated with 3 [...] Read more.
Currently, intercalation has become an effective way to modify the fundamental properties of two-dimensional (2D) van der Waals (vdW) materials. Using density functional theory, we systematically investigated the structures and electronic and magnetic properties of bilayer transition metal dichalcogenides (TMDs) intercalated with 3d TM atoms (TM = Sc–Ni), TM@BL_MS2 (M = Mo, V). Our results demonstrate that all the studied TM@BL_MS2s are of high stability, with large binding energies and high diffusion barriers of TM atoms. Interestingly, most TM@BL_MoS2s and TM@BL_VS2s are found to be stable ferromagnets. Among them, TM@BL_MoS2s (TM = Sc, Ti, Fe, Co) are ferromagnetic metals, TM@BL_MoS2 (TM = V, Cr) and TM@BL_VS2 (TM = Sc, V) are ferromagnetic half-metals, and the remaining systems are found to be ferromagnetic semiconductors. Exceptions are found for Ni@BL_MoS2 and Cr@BL_VS2, which are nonmagnetic semiconductors and ferrimagnetic half-metals, respectively. Further investigations reveal that the electromagnetic properties of TM@BL_MoS2 are significantly influenced by the concentration of intercalated TM atoms. Our study demonstrates that TM atom intercalation is an effective approach for manipulating the electromagnetic properties of two-dimensional materials, facilitating their potential applications in spintronic devices. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials, 2nd Edition)
►▼ Show Figures

Figure 1

10 pages, 3745 KiB  
Article
Polysilane–Barium Titanate Polymeric Composite Obtained through Ultrasonication
by Răzvan Rotaru, Maria Emiliana Fortună, Elena Ungureanu and Liviu Sacarescu
Inorganics 2024, 12(8), 213; https://doi.org/10.3390/inorganics12080213 - 7 Aug 2024
Viewed by 668
Abstract
This work describes the synthesis of a polysilane (PSH)–barium titanate (BT) ferroelectric polymer composite that keeps stable in the presence of ultraviolet light (UV). To evaluate the stability in the presence of UV radiation and the mechanism of interaction between the PSH matrix [...] Read more.
This work describes the synthesis of a polysilane (PSH)–barium titanate (BT) ferroelectric polymer composite that keeps stable in the presence of ultraviolet light (UV). To evaluate the stability in the presence of UV radiation and the mechanism of interaction between the PSH matrix and BT, FTIR measurements were carried out. The UV/VIS absorption measurement reveals that PSH absorbs strongly in the ultraviolet range, while the composite behaves similarly to BT. Although PSH is a semiconductor, the dielectric spectrometry analysis determined that BT is a ferroelectric material due to its high dielectric constant and low dielectric losses. In contrast to the polymer matrix, the composite polymer has a greater dielectric constant and a lower loss permittivity. PSH is a semiconductor, as indicated by its electrical conductivity of 10−5 S/cm; nevertheless, the UV-irradiated polymer has antistatic properties (10−8 S/cm). Irradiated or not, the polymer composite is a semiconductor, with conductivity of 10−6 S/cm, significantly lower than that of PSH. The interaction with electromagnetic radiation indicates electromagnetic shielding behavior for both BT (highest absorption magnitude of −57 dB) and the polymer composite (maximum absorption magnitudes range from 8.4 to −15.2 dB). Based on these research results, the novel composite with specific characteristics may be used in electronic applications in UV-irradiated conditions. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials, 2nd Edition)
►▼ Show Figures

Graphical abstract

14 pages, 4575 KiB  
Article
Synthesis and Characterization of Broccoli-like Ag/Cu2O Nanostructures on ZnO Nanowires Using the Plasma–Liquid Interaction Method
by Phung Thi Thu, Ta Ngoc Bach, Le Thi Hong Phong, Do Hoang Tung, Vu Hong Ky, Do Khanh Tung, Vu Dinh Lam, Do Hung Manh, Nguyen Huy Dan, Trinh Xuan Anh and Ngo Thi Hong Le
Inorganics 2024, 12(3), 80; https://doi.org/10.3390/inorganics12030080 - 6 Mar 2024
Cited by 1 | Viewed by 1545
Abstract
We have designed an excellent visible-light-driven and high-performance photocatalyst with a Ag-Cu2O-ZnO nanowire heterostructure in our work by combining the hydrothermal approach with plasma–liquid technology. The structural and morphological characteristics and optical properties of the samples were evaluated using X-ray diffraction, [...] Read more.
We have designed an excellent visible-light-driven and high-performance photocatalyst with a Ag-Cu2O-ZnO nanowire heterostructure in our work by combining the hydrothermal approach with plasma–liquid technology. The structural and morphological characteristics and optical properties of the samples were evaluated using X-ray diffraction, field-emission scanning electron microscopy, and spectrophotometry, respectively. The results show that the Ag nanoparticles are mainly positioned on the Cu2O nanoclusters compared with the ZnO nanowire surface, forming broccoli-like Ag-Cu2O nanoclusters during the Ar gas plasma treatment process in an aqueous solution. The diameter of the Ag/Cu2O nanoclusters ranges from 150 to 180 nm. The Ag-Cu2O-ZnO nanowires exhibited improved photocatalytic performance, decomposing approximately 98% methyl orange dye in 30 min. This is a consequence of the synergistic interactions between the p-n heterojunction formed at the Cu2O-ZnO interfaces and the localized surface plasmon resonance (LSPR) effect of the Ag nanoparticles, which broaden the visible light absorption range and effectively separate the photogenerated charge carriers. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials, 2nd Edition)
►▼ Show Figures

Figure 1

Review

Jump to: Research

27 pages, 5416 KiB  
Review
Recent Advances in Aluminum Nitride (AlN) Growth by Magnetron Sputtering Techniques and Its Applications
by Nabeel Ahmad Khan Jadoon, Vaigunthan Puvanenthiram, Mayada Ahmed Hassan Mosa, Ashutosh Sharma and Kaiying Wang
Inorganics 2024, 12(10), 264; https://doi.org/10.3390/inorganics12100264 - 7 Oct 2024
Viewed by 902
Abstract
This review explores the processes involved in enhancing AlN film quality through various magnetron sputtering techniques, crucial for optimizing performance and expanding their application scope. It presents recent advancements in growing AlN thin films via magnetron sputtering, elucidating the mechanisms of AlN growth [...] Read more.
This review explores the processes involved in enhancing AlN film quality through various magnetron sputtering techniques, crucial for optimizing performance and expanding their application scope. It presents recent advancements in growing AlN thin films via magnetron sputtering, elucidating the mechanisms of AlN growth and navigating the complexities of thin-film fabrication. Emphasis is placed on different sputtering methods such as DC, RF, pulsed DC, and high-power impulse DC, highlighting how tailored sputtering conditions enhance film characteristics in each method. Additionally, the review discusses recent research findings showcasing the dynamic potential of these techniques. The practical applications of AlN thin films, including wave resonators, energy harvesting devices, and thermal management solutions, are outlined, demonstrating their relevance in addressing real-world engineering challenges. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials, 2nd Edition)
►▼ Show Figures

Figure 1

16 pages, 1471 KiB  
Review
Synthesis and Study of Correlated Phase Transitions of CrN Nanoparticles
by Khan Alam
Inorganics 2024, 12(9), 247; https://doi.org/10.3390/inorganics12090247 - 11 Sep 2024
Viewed by 477
Abstract
Chromium nitride is an important transition metal nitride for studying fundamental properties and for advanced technological applications. It is considered a model system for exploring structural, electronic, and magnetic transitions. These transitions occur at 275 ± 10 K and appear to be coupled; [...] Read more.
Chromium nitride is an important transition metal nitride for studying fundamental properties and for advanced technological applications. It is considered a model system for exploring structural, electronic, and magnetic transitions. These transitions occur at 275 ± 10 K and appear to be coupled; however, many discrepant studies on these transitions can be found in the published literature. The underlying reasons for these controversies are suspected to be the CrN nanoparticles preparation methods, strains, impurities, stoichiometry, nanoparticle size, characterization methods, and ambient conditions for characterizing them. This article is focused on the review of the nanoparticle synthesis methods and the use of these nanoparticles for studying structural, electronic, and magnetic transitions. The focus is mainly on the experimental methods, while theoretical simulations are briefly reviewed at the end of the article. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials, 2nd Edition)
►▼ Show Figures

Graphical abstract

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-5

Planned Papers

The below list represents only planned manuscripts. Some of these manuscripts have not been received by the Editorial Office yet. Papers submitted to MDPI journals are subject to peer-review.

Title: Synthesis and Study of Correlated Phase Transitions of CrN Nanoparticles
Authors: Khan Alam
Affiliation: King Fahd University of Petroleum and Minerals
Abstract: Chromium nitride is an important transition metal nitride for studying fundamental properties and using it for advanced technological applications. It is considered a model system for exploring structural, electronic, and magnetic transitions. These transitions occur at 275±10 K and appear to be coupled; however, many discrepant studies have been published. The underlying reasons for these controversies are suspected to be the CrN nanoparticles preparation methods, strains, impurities, stoichiometry, nanoparticle size, characterization methods, and ambient conditions for characterizing them. This article is focused on the review of the nanoparticle synthesis methods and the use of these nanoparticles for studying a phase transition. The focus remains mainly on the experimental methods, while theoretical simulations are briefly reviewed at the end of this article.

Back to TopTop