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Advances in Photoelectric Materials: Preparation, Properties, and Applications
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Advances in Photoelectric Materials: Preparation, Properties, and Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".

Deadline for manuscript submissions: closed (20 November 2024) | Viewed by 5842

Special Issue Editors

Dr. Anna Starczewska

E-Mail Website
Guest Editor
Institute of Physics – Centre for Science and Education, Silesian University of Technology, Krasińskiego 8, 40-019 Katowice, Poland
Interests: photonic crystals; energy harvesting; impedance spectroscopy; nanomaterials; supercapacitors
Dr. Mirosława Kȩpińska

E-Mail Website
Guest Editor
Institute of Physics – Centre for Science and Education, Silesian University of Technology, Krasińskiego 8, 40-019 Katowice, Poland
Interests: photonic crystals; nanomaterials; semiconductors; optical spectroscopy; spectrogoniometry; optical parameters
Prof. Dr. Marian Nowak

E-Mail Website
Guest Editor
Division of Solid State Physics, Institute of Physics—Centre for Science and Education at the Silesian University of Technology, Gliwice, Poland
Interests: nanotechnology; physics

Special Issue Information

Dear Colleagues,

The field of photoelectric materials has witnessed tremendous progress in recent years, revolutionizing various technologies and applications ranging from renewable energy to information storage and sensing platforms.

This Special Issue seeks to showcase the latest advancements in photoelectric materials, highlighting the innovative strategies employed in material synthesis, functionalization, and characterization. Contributions addressing the fundamental properties of photoelectric materials, especially optical, electrical, and structural properties, are particularly encouraged. Furthermore, studies on novel materials and their potential utilization in areas including photovoltaics, photoelectrochemical devices, optical sensing, and optoelectronics are also welcomed.

Dr. Anna Starczewska
Dr. Mirosława Kȩpińska
Prof. Dr. Marian Nowak
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • photoelectric materials
  • optoelectronics
  • photodetectors
  • light sources
  • optical sensors
  • solar cells

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Published Papers (4 papers)

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Research

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14 pages, 3430 KiB  
Article
Ambient Stability of Sodium-Doped Copper Oxide Obtained through Thermal Oxidation
by Katarzyna Gawlińska-Nęcek, Robert P. Socha, Zbigniew Starowicz, Łukasz Major and Piotr Panek
Materials 2024, 17(19), 4823; https://doi.org/10.3390/ma17194823 - 30 Sep 2024
Viewed by 450
Abstract
The ambient stability of copper oxide layers produced through thermal oxidation is a critical factor for their application in advanced photovoltaic devices. This study investigates the long-term stability of thermally grown sodium-doped copper oxides fabricated at 300 °C, 500 °C, and 700 °C. [...] Read more.
The ambient stability of copper oxide layers produced through thermal oxidation is a critical factor for their application in advanced photovoltaic devices. This study investigates the long-term stability of thermally grown sodium-doped copper oxides fabricated at 300 °C, 500 °C, and 700 °C. The structural, optical, and electronic properties of these oxide layers were examined after a 30-day period to understand how thermal oxidation temperature and sodium doping influence the durability and properties of copper oxide films. The results indicate that the stability of thermal copper oxide increases with oxidation temperature. The film produced at 700 °C maintained consistent optical properties, work function value, and structural integrity over time, demonstrating their robustness against environmental degradation. In contrast, the layers produced at lower temperatures (300 °C and 500 °C) showed more significant changes due to continued oxidation and adsorption from ambient. Full article
(This article belongs to the Special Issue Advances in Photoelectric Materials: Preparation, Properties, and Applications)
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12 pages, 2403 KiB  
Article
High Efficiency Flat-Type GaN-Based Light-Emitting Diodes with Multiple Local Breakdown Conductive Channels
by Dae-Choul Choi, Seung Hun Lee and Sung-Nam Lee
Materials 2024, 17(11), 2700; https://doi.org/10.3390/ma17112700 - 3 Jun 2024
Viewed by 662
Abstract
We investigated a flat-type p*-p LED composed of a p*-electrode with a local breakdown conductive channel (LBCC) formed in the p-type electrode region by applying reverse bias. By locally connecting the p*-electrode to the n-type layer via an LBCC, a flat-type LED structure [...] Read more.
We investigated a flat-type p*-p LED composed of a p*-electrode with a local breakdown conductive channel (LBCC) formed in the p-type electrode region by applying reverse bias. By locally connecting the p*-electrode to the n-type layer via an LBCC, a flat-type LED structure is applied that can replace the n-type electrode without a mesa-etching process. Flat-type p*-p LEDs, devoid of the mesa process, demonstrate outstanding characteristics, boasting comparable light output power to conventional mesa-type n-p LEDs at the same injection current. However, they incur higher operating voltages, attributed to the smaller size of the p* region used as the n-type electrode compared to conventional n-p LEDs. Therefore, despite having comparable external quantum efficiency stemming from similar light output, flat-type p*-p LEDs exhibit diminished wall-plug efficiency (WPE) and voltage efficiency (VE) owing to elevated operating voltages. To address this, our study aimed to mitigate the series resistance of flat-type p*-p LEDs by augmenting the number of LBCCs to enhance the contact area, thereby reducing overall resistance. This structure holds promise for elevating WPE and VE by aligning the operating voltage more closely with that of mesa-type n-p LEDs. Consequently, rectifying the issue of high operating voltages in planar p*-p LEDs enables the creation of efficient LEDs devoid of crystal defects resulting from mesa-etching processes. Full article
(This article belongs to the Special Issue Advances in Photoelectric Materials: Preparation, Properties, and Applications)
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8 pages, 2325 KiB  
Article
Photoluminescence Spectra Correlations with Structural Distortion in Eu3+- and Ce3+-Doped Y3Al5-2x(Mg,Ge)xO12 (x = 0, 1, 2) Garnet Phosphors
by Heonji Ha, Sungjun Yang and Sangmoon Park
Materials 2024, 17(10), 2445; https://doi.org/10.3390/ma17102445 - 19 May 2024
Viewed by 922
Abstract
Garnet-type materials consisting of Y3Al5-2x(Mg,Ge)xO12 (x = 0, 1, 2), combined with Eu3+ or Ce3+ activator ions, were prepared by a solid-state method to determine the structural and optical correlations. The structure [...] Read more.
Garnet-type materials consisting of Y3Al5-2x(Mg,Ge)xO12 (x = 0, 1, 2), combined with Eu3+ or Ce3+ activator ions, were prepared by a solid-state method to determine the structural and optical correlations. The structure of Y3Al5-2x(Mg,Ge)xO12 (x = 1, 2) was determined to be a cubic unit cell (Ia-3d), which contains an 8-coordinated Y3+ site with octahedral (Mg,Al)O6 and tetrahedral (Al,Ge)O4 polyhedra, using synchrotron powder X-ray diffraction. When Eu3+ or Ce3+ ions were substituted for the Y3+ site in the Y3Al5-2x(Mg,Ge)xO12 host lattices, the emission spectra showed a decrease in the magnetic dipole f-f Eu3+ transition and a redshift of the d-f Ce3+ transition, related to centrosymmetry and crystal field splitting, respectively. These changes were monitored according to the increase in Mg2+ and Ge4+ contents. The dodecahedral and octahedral edge sharing was identified as a key distortion factor for the structure-correlated luminescence in the Eu3+/Ce3+-doped Y3Al5-2x(Mg,Ge)xO12 garnet phosphors. Full article
(This article belongs to the Special Issue Advances in Photoelectric Materials: Preparation, Properties, and Applications)
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Review

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28 pages, 9843 KiB  
Review
Photonic Crystal Structures for Photovoltaic Applications
by Anna Starczewska and Mirosława Kępińska
Materials 2024, 17(5), 1196; https://doi.org/10.3390/ma17051196 - 4 Mar 2024
Cited by 4 | Viewed by 2879
Abstract
Photonic crystals are artificial structures with a spatial periodicity of dielectric permittivity on the wavelength scale. This feature results in a spectral region over which no light can propagate within such a material, known as the photonic band gap (PBG). It leads to [...] Read more.
Photonic crystals are artificial structures with a spatial periodicity of dielectric permittivity on the wavelength scale. This feature results in a spectral region over which no light can propagate within such a material, known as the photonic band gap (PBG). It leads to a unique interaction between light and matter. A photonic crystal can redirect, concentrate, or even trap incident light. Different materials (dielectrics, semiconductors, metals, polymers, etc.) and 1D, 2D, and 3D architectures (layers, inverse opal, woodpile, etc.) of photonic crystals enable great flexibility in designing the optical response of the material. This opens an extensive range of applications, including photovoltaics. Photonic crystals can be used as anti-reflective and light-trapping surfaces, back reflectors, spectrum splitters, absorption enhancers, radiation coolers, or electron transport layers. This paper presents an overview of the developments and trends in designing photonic structures for different photovoltaic applications. Full article
(This article belongs to the Special Issue Advances in Photoelectric Materials: Preparation, Properties, and Applications)
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