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CVD Deposition and Characterization of Multilayers and Thin Films
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CVD Deposition and Characterization of Multilayers and Thin Films

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Thin Films and Interfaces".

Deadline for manuscript submissions: closed (31 July 2022) | Viewed by 10084

Special Issue Editor

Dr. Victor Ralchenko

E-Mail Website
Guest Editor
General Physics Institute, Russian Academy of Sciences, 38 Vavilova St., Moscow 119991, Russia
Interests: thin films; CVD diamond; carbon materials; carbon photonics; thermal conductivity; laser treatment; diamond radiation detectors
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Science and technology of thin films produced by CVD techniques, despite being a matured research field, demonstrates a continuous progress due to the synthesis of new materials, adapting deposition parameters to demands of particular applications, better in situ control of reaction gas chemistry, and sophisticated methods for material characterization. CVD films are indispensable for the fabrication of electronic and photonic devices, surface coatings with special properties such as high hardness, wear and chemical resistance, low friction, superhydrophobicity, dielectric/conductive layers, bioactivity, and many others. The use of complex (multilayer) structures may greatly improve film functionality, allowing to obtain heterostructures with tuned electronic properties, metamaterials, adherent superhard coatings on tools with reduced stress, and optical coatings for specific spectral ranges. The control of interface structures both for single layers and multilayers plays a very important role in achieving the full potential of the deposited material.

This Special Issue will be devoted to all aspects related to CVD films: growth, characterization and applications, to present the state-of-the-art in this rapidly developing field, with a special focus on multilayer structures and interface phenomena. Original research papers and review articles related to these areas are cordially invited.

The topics of interest include but are not limited to:

  • Multilayers and gradient films for stress, adhesion, and surface roughness control;
  • Ultrathin films;
  • Composite films;
  • Bilayers and multilayers for electronic applications;
  • Defects formation on interfaces;
  • Structure of interfaces on atomic and nanoscale;
  • Optical, electronic, thermal, and mechanical properties of thin films;
  • Diamond multilayer films with modulation of grain size, isotope composition, doping level;
  • Protocols of CVD processes for film growth;
  • In situ control of multilayer film deposition;
  • Methods for the characterization of thin films;
  • Spectroscopic gas (plasma) diagnostics in CVD processes;
  • Simulation of multilayers with a focus on interface structure.

Dr. Victor Ralchenko
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • CVD
  • thin films
  • interface
  • multilayers
  • stress
  • structure
  • defects
  • doping
  • in situ diagnostics

Published Papers (5 papers)

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Research

14 pages, 2703 KiB  
Article
Electrochemical Improvement of the MWCNT/Al Electrodes for Supercapacitors
by Arkady N. Redkin, Alena A. Mitina, Eugene E. Yakimov and Evgeny N. Kabachkov
Materials 2021, 14(24), 7612; https://doi.org/10.3390/ma14247612 - 10 Dec 2021
Cited by 3 | Viewed by 1902
Abstract
An original technique of chemical deposition (CVD) by catalytic pyrolysis of ethanol vapor was used to directly grow multiwall carbon nanotubes (MWCNTs) layers on aluminum foil. The grown nanotubes had excellent adhesion and direct electrical contact to the aluminum substrate. This material was [...] Read more.
An original technique of chemical deposition (CVD) by catalytic pyrolysis of ethanol vapor was used to directly grow multiwall carbon nanotubes (MWCNTs) layers on aluminum foil. The grown nanotubes had excellent adhesion and direct electrical contact to the aluminum substrate. This material was perfect for use in electrochemical supercapacitors. In this work, the possibility of a significant increase in the specific capacity of MWCNTs by simple electrochemical oxidation was investigated. The optimal conditions for improving the characteristics of the MWCNT/Al electrodes were found. Electrochemical treatment of MWCNT/Al electrodes in a 0.005 M Na2SO4 solution at a potential of 4–5 V for 20–30 min increased the specific capacity of MWCNTs from 30 F/g to 140 F/g. The properties of modified nanotubes were investigated by X-ray photoelectron spectroscopy, cyclic voltammetry (CV), and impedance spectroscopy. A significant increase in the concentration of oxygen-containing functional groups on the surface of MWCNTs was found as a result of electrochemical oxidation. The modified MWCNT/Al electrodes maintained excellent stability to multiple charge–discharge cycles. After 20,000 CVs, the capacity loss was less than 5%. Thus, the results obtained significantly expanded the possibilities of using MWCNT/Al composite materials obtained by the method of direct deposition of carbon nanotubes on aluminum foil as electrodes for supercapacitors. Full article
(This article belongs to the Special Issue CVD Deposition and Characterization of Multilayers and Thin Films)
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10 pages, 2986 KiB  
Article
Boron Doped Diamond for Real-Time Wireless Cutting Temperature Monitoring of Diamond Coated Carbide Tools
by Sérgio Pratas, Eduardo L. Silva, Miguel A. Neto, Cristina M. Fernandes, António J. S. Fernandes, Daniel Figueiredo and Rui F. Silva
Materials 2021, 14(23), 7334; https://doi.org/10.3390/ma14237334 - 30 Nov 2021
Cited by 5 | Viewed by 1957
Abstract
Among the unique opportunities and developments that are currently being triggered by the fourth industrial revolution, developments in cutting tools have been following the trend of an ever more holistic control of manufacturing processes. Sustainable manufacturing is at the forefront of tools development, [...] Read more.
Among the unique opportunities and developments that are currently being triggered by the fourth industrial revolution, developments in cutting tools have been following the trend of an ever more holistic control of manufacturing processes. Sustainable manufacturing is at the forefront of tools development, encompassing environmental, economic, and technological goals. The integrated use of sensors, data processing, and smart algorithms for fast optimization or real time adjustment of cutting processes can lead to a significant impact on productivity and energy uptake, as well as less usage of cutting fluids. Diamond is the material of choice for machining of non-ferrous alloys, composites, and ultrahard materials. While the extreme hardness, thermal conductivity, and wear resistance of CVD diamond coatings are well-known, these also exhibit highly auspicious sensing properties through doping with boron and other elements. The present study focuses on the thermal response of boron-doped diamond (BDD) coatings. BDD coatings have been shown to have a negative temperature coefficient (NTC). Several approaches have been adopted for monitoring cutting temperature, including thin film thermocouples and infrared thermography. Although these are good solutions, they can be costly and become impractical for certain finishing cutting operations, tool geometries such as rotary tools, as well as during material removal in intricate spaces. In the scope of this study, diamond/WC-Co substrates were coated with BDD by hot filament chemical vapor deposition (HFCVD). Scanning electron microscopy, Raman spectroscopy, and the van der Pauw method were used for morphological, structural, and electrical characterization, respectively. The thermal response of the thin diamond thermistors was characterized in the temperature interval of 20–400 °C. Compared to state-of-the-art temperature monitoring solutions, this is a one-step approach that improves the wear properties and heat dissipation of carbide tools while providing real-time and in-situ temperature monitoring. Full article
(This article belongs to the Special Issue CVD Deposition and Characterization of Multilayers and Thin Films)
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12 pages, 3071 KiB  
Article
Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF4 Based Process Conditions
by Mario Moreno, Arturo Ponce, Arturo Galindo, Eduardo Ortega, Alfredo Morales, Javier Flores, Roberto Ambrosio, Alfonso Torres, Luis Hernandez, Hector Vazquez-Leal, Gilles Patriarche and Pere Roca i Cabarrocas
Materials 2021, 14(22), 6947; https://doi.org/10.3390/ma14226947 - 17 Nov 2021
Cited by 2 | Viewed by 1611
Abstract
Hydrogenated microcrystalline silicon (µc-Si:H) and epitaxial silicon (epi-Si) films have been produced from SiF4, H2 and Ar mixtures by plasma enhanced chemical vapor deposition (PECVD) at 200 °C. Here, both films were produced using identical deposition conditions, to determine if [...] Read more.
Hydrogenated microcrystalline silicon (µc-Si:H) and epitaxial silicon (epi-Si) films have been produced from SiF4, H2 and Ar mixtures by plasma enhanced chemical vapor deposition (PECVD) at 200 °C. Here, both films were produced using identical deposition conditions, to determine if the conditions for producing µc-Si with the largest crystalline fraction (XC), will also result in epi-Si films that encompass the best quality and largest crystalline silicon (c-Si) fraction. Both characteristics are of importance for the development of thin film transistors (TFTs), thin film solar cells and novel 3D devices since epi-Si films can be grown or etched in a selective manner. Therefore, we have distinguished that the H2/SiF4 ratio affects the XC of µc-Si, the c-Si fraction in epi-Si films, and the structure of the epi-Si/c-Si interface. Raman and UV-Vis ellipsometry were used to evaluate the crystalline volume fraction (Xc) and composition of the deposited layers, while the structure of the films were inspected by high resolution transmission electron microscopy (HRTEM). Notably, the conditions for producing µc-Si with the largest XC are different in comparison to the fabrication conditions of epi-Si films with the best quality and largest c-Si fraction. Full article
(This article belongs to the Special Issue CVD Deposition and Characterization of Multilayers and Thin Films)
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11 pages, 3747 KiB  
Article
Effect of the Graded Silicon Content in SRN/SRO Multilayer Structures on the Si Nanocrystals and Si Nanopyramids Formation and Their Photoluminescence Response
by José Juan Avilés Bravo, Santiago Antonio Cabañas Tay, Liliana Palacios Huerta, Karla Esther González Flores, Javier Flores Méndez, Mario Moreno Moreno and Alfredo Morales Sánchez
Materials 2021, 14(21), 6582; https://doi.org/10.3390/ma14216582 - 2 Nov 2021
Cited by 1 | Viewed by 1545
Abstract
Two multilayer (ML) structures, composed of five layers of silicon-rich oxide (SRO) with different Si contents and a sixth layer of silicon-rich nitride (SRN), were deposited by low pressure chemical vapor deposition. These SRN/SRO MLs were thermally annealed at 1100 °C for 180 [...] Read more.
Two multilayer (ML) structures, composed of five layers of silicon-rich oxide (SRO) with different Si contents and a sixth layer of silicon-rich nitride (SRN), were deposited by low pressure chemical vapor deposition. These SRN/SRO MLs were thermally annealed at 1100 °C for 180 min in ambient N2 to induce the formation of Si nanostructures. For the first ML structure (MLA), the excess Si in each SRO layer was about 10.7 ± 0.6, 9.1 ± 0.4, 8.0 ± 0.2, 9.1 ± 0.3 and 9.7 ± 0.4 at.%, respectively. For the second ML structure (MLB), the excess Si was about 8.3 ± 0.2, 10.8 ± 0.4, 13.6 ± 1.2, 9.8 ± 0.4 and 8.7 ± 0.1 at.%, respectively. Si nanopyramids (Si-NPs) were formed in the SRO/Si substrate interface when the SRO layer with the highest excess silicon (10.7 at.%) was deposited next to the MLA substrate. The height, base and density of the Si-NPs was about 2–8 nm, 8–26 nm and ~6 × 1011 cm−2, respectively. In addition, Si nanocrystals (Si-ncs) with a mean size of between 3.95 ± 0.20 nm and 2.86 ± 0.81 nm were observed for the subsequent SRO layers. Meanwhile, Si-NPs were not observed when the excess Si in the SRO film next to the Si-substrate decreased to 8.3 ± 0.2 at.% (MLB), indicating that there existed a specific amount of excess Si for their formation. Si-ncs with mean size of 2.87 ± 0.73 nm and 3.72 ± 1.03 nm were observed for MLB, depending on the amount of excess Si in the SRO film. An enhanced photoluminescence (PL) emission (eight-fold more) was observed in MLA as compared to MLB due to the presence of the Si-NPs. Therefore, the influence of graded silicon content in SRN/SRO multilayer structures on the formation of Si-NPs and Si-ncs, and their relation to the PL emission, was analyzed. Full article
(This article belongs to the Special Issue CVD Deposition and Characterization of Multilayers and Thin Films)
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16 pages, 3669 KiB  
Article
Chemical Vapor Deposited Mixed Metal Halide Perovskite Thin Films
by Siphesihle Siphamandla Magubane, Christopher Joseph Arendse, Siphelo Ngqoloda, Franscious Cummings, Christopher Mtshali and Amogelang Sylvester Bolokang
Materials 2021, 14(13), 3526; https://doi.org/10.3390/ma14133526 - 24 Jun 2021
Cited by 3 | Viewed by 2199
Abstract
In this article, we used a two-step chemical vapor deposition (CVD) method to synthesize methylammonium lead-tin triiodide perovskite films, MAPb1−xSnxI3, with x varying from 0 to 1. We successfully controlled the concentration of Sn in the perovskite [...] Read more.
In this article, we used a two-step chemical vapor deposition (CVD) method to synthesize methylammonium lead-tin triiodide perovskite films, MAPb1−xSnxI3, with x varying from 0 to 1. We successfully controlled the concentration of Sn in the perovskite films and used Rutherford backscattering spectroscopy (RBS) to quantify the composition of the precursor films for conversion into perovskite films. According to the RBS results, increasing the SnCl2 source amount in the reaction chamber translate into an increase in Sn concentration in the films. The crystal structure and the optical properties of perovskite films were examined by X-ray diffraction (XRD) and UV-Vis spectrometry. All the perovskite films depicted similar XRD patterns corresponding to a tetragonal structure with I4cm space group despite the precursor films having different crystal structures. The increasing concentration of Sn in the perovskite films linearly decreased the unit volume from about 988.4 Å3 for MAPbI3 to about 983.3 Å3 for MAPb0.39Sn0.61I3, which consequently influenced the optical properties of the films manifested by the decrease in energy bandgap (Eg) and an increase in the disorder in the band gap. The SEM micrographs depicted improvements in the grain size (0.3–1 µm) and surface coverage of the perovskite films compared with the precursor films. Full article
(This article belongs to the Special Issue CVD Deposition and Characterization of Multilayers and Thin Films)
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