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Electronic and Optical Properties of Heterostructures
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Electronic and Optical Properties of Heterostructures

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Optical and Photonic Materials".

Deadline for manuscript submissions: closed (20 April 2023) | Viewed by 14093

Special Issue Editor

Dr. Witold Rzodkiewicz

E-Mail Website
Guest Editor
Central Office of Measures, Electricity and Radiation Department, 00-139 Warsaw, Poland
Interests: electrical metrology; material science; MOS structures; optical properties; semiconductor device physics; spectroscopic ellipsometry; stresses
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

A deep understanding of the electronic and optical properties of heterostructures is becoming increasingly crucial to a wide range of applications in modern electronic, optoelectronic, spintronic, and valleytronic devices. Therefore, the selection of a proper method for characterizing these structures is very important to understanding these properties. Various heterostructures exhibit different synergistic relationships between two or more structural elements that improve their functional properties. The interplay between the fabrication parameters and their optical and electrical properties can be evaluated using several characterization methods, including, inter alia, Raman, X-ray photoelectron, photoluminescence, and capacitance spectroscopy.

In this Special Issue, we aim to highlight and discuss key electronic and properties of modern heterostructures.

It is my pleasure to invite you to submit a manuscript for publication in this Special Issue. Original research papers, review articles, and short communications are welcome.

Witold Rzodkiewicz
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • heterostructures
  • electronic devices
  • optoelectronic devices
  • spintronic and valleytronic devices
  • Raman spectroscopy
  • photoluminescence characterization
  • X-ray photoelectron spectroscopy
  • capacitance spectroscopy (DLTS).

Related Special Issue

Published Papers (5 papers)

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Research

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11 pages, 5445 KiB  
Article
Mg Doping of N-Polar, In-Rich InAlN
by Ján Kuzmík, Ondrej Pohorelec, Stanislav Hasenöhrl, Michal Blaho, Roman Stoklas, Edmund Dobročka, Alica Rosová, Michal Kučera, Filip Gucmann, Dagmar Gregušová, Marian Precner and Andrej Vincze
Materials 2023, 16(6), 2250; https://doi.org/10.3390/ma16062250 - 10 Mar 2023
Cited by 1 | Viewed by 1139
Abstract
Metal organic chemical vapor deposition was used to grow N-polar In0.63Al0.37N on sapphire substrates. P-doping was provided by a precursor flow of Cp2Mg between 0 and 130 nmol/min, reaching a Cp2Mg/III ratio of 8.3 × [...] Read more.
Metal organic chemical vapor deposition was used to grow N-polar In0.63Al0.37N on sapphire substrates. P-doping was provided by a precursor flow of Cp2Mg between 0 and 130 nmol/min, reaching a Cp2Mg/III ratio of 8.3 × 10−3. The grain structure of 360 nm thick InAlN was spoiled by pits after introducing a flow of CP2Mg at 30 nmol/min. The surface quality was improved with a flow of 80 nmol/min; however, detrimental deterioration appeared at 130 nmol/min. This correlated with the XRD shape and determined density of dislocations, indicating a phase separation at the highest flow. Degenerated n-type conduction and a free carrier concentration of ~1019 cm−3 were determined in all samples, with a minor compensation observed at a CP2Mg flow of 30 nmol/min. The room temperature (RT) electron mobility of ~40 cm2/Vs of the undoped sample was reduced to ~6 and ~0.3 cm2/Vs with a CP2Mg flow of 30 and 80 nmol/min, respectively. Scattering at ionized acceptor/donor Mg-related levels is suggested. RT photoluminescence showed a red shift of 0.22 eV from the virgin 1.73 eV peak value with Mg doping. Mobility degradation was found to be the main factor by InAlN resistivity determination, which increased by two orders of magnitude, approaching ~0.5 Ωcm, at the highest Cp2Mg flow. Full article
(This article belongs to the Special Issue Electronic and Optical Properties of Heterostructures)
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12 pages, 1483 KiB  
Article
Interlayer and Intralayer Excitons in AlN/WS2 Heterostructure
by Claudio Attaccalite, Maria Stella Prete, Maurizia Palummo and Olivia Pulci
Materials 2022, 15(23), 8318; https://doi.org/10.3390/ma15238318 - 23 Nov 2022
Cited by 2 | Viewed by 1435
Abstract
The study of intra and interlayer excitons in 2D semiconducting vdW heterostructures is a very hot topic not only from a fundamental but also an applicative point of view. Due to their strong light–matter interaction, Transition Metal Dichalcogenides (TMD) and group-III nitrides are [...] Read more.
The study of intra and interlayer excitons in 2D semiconducting vdW heterostructures is a very hot topic not only from a fundamental but also an applicative point of view. Due to their strong light–matter interaction, Transition Metal Dichalcogenides (TMD) and group-III nitrides are particularly attractive in the field of opto-electronic applications such as photo-catalytic and photo-voltaic ultra-thin and flexible devices. Using first-principles ground and excited-state simulations, we investigate here the electronic and excitonic properties of a representative nitride/TMD heterobilayer, the AlN/WS2. We demonstrate that the band alignment is of type I, and low energy intralayer excitons are similar to those of a pristine WS2 monolayer. Further, we disentangle the role of strain and AlN dielectric screening on the electronic and optical gaps. These results, although they do not favor the possible use of AlN/WS2 in photo-catalysis, as envisaged in the previous literature, can boost the recently started experimental studies of 2D hexagonal aluminum nitride as a good low screening substrate for TMD-based electronic and opto-electronic devices. Importantly, our work shows how the inclusion of both spin-orbit and many-body interactions is compulsory for the correct prediction of the electronic and optical properties of TMD/nitride heterobilayers. Full article
(This article belongs to the Special Issue Electronic and Optical Properties of Heterostructures)
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10 pages, 860 KiB  
Article
Real-Time Monitoring the Growth of Epitaxial CoxFe3−xO4 Ultrathin Films on Nb-Doped SrTiO3(001) via Reactive Molecular Beam Epitaxy by Means of Operando HAXPES
by Kevin Ruwisch, Tobias Pohlmann, Florian Bertram, Christoph Schlüter, Andrei Gloskovskii, Karsten Küpper and Joachim Wollschläger
Materials 2022, 15(7), 2377; https://doi.org/10.3390/ma15072377 - 23 Mar 2022
Cited by 1 | Viewed by 1718
Abstract
In this work, we present a comprehensive study on real-time monitoring the growth of epitaxial CoxFe3−xO4 thin films grown on SrTiO3(001) substrates via reactive molecular beam epitaxy. The growth process was monitored during evaporation by [...] Read more.
In this work, we present a comprehensive study on real-time monitoring the growth of epitaxial CoxFe3−xO4 thin films grown on SrTiO3(001) substrates via reactive molecular beam epitaxy. The growth process was monitored during evaporation by means of time resolved operando hard X-ray photoelectron spectroscopy (HAXPES). We prepared ultrathin ferrite films using different oxygen partial pressures, showing pure metallic, light oxidic, and cobalt ferrite-like growth. Additional X-ray diffraction measurements confirm HAXPES results. Full article
(This article belongs to the Special Issue Electronic and Optical Properties of Heterostructures)
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15 pages, 2008 KiB  
Article
A Feasible Alternative to FDSOI and FinFET: Optimization of W/La2O3/Si Planar PMOS with 14 nm Gate-Length
by Siew Kien Mah, Pin Jern Ker, Ibrahim Ahmad, Noor Faizah Zainul Abidin and Mansur Mohammed Ali Gamel
Materials 2021, 14(19), 5721; https://doi.org/10.3390/ma14195721 - 30 Sep 2021
Cited by 9 | Viewed by 2560
Abstract
At the 90-nm node, the rate of transistor miniaturization slows down due to challenges in overcoming the increased leakage current (Ioff). The invention of high-k/metal gate technology at the 45-nm technology node was an enormous step forward in extending Moore’s [...] Read more.
At the 90-nm node, the rate of transistor miniaturization slows down due to challenges in overcoming the increased leakage current (Ioff). The invention of high-k/metal gate technology at the 45-nm technology node was an enormous step forward in extending Moore’s Law. The need to satisfy performance requirements and to overcome the limitations of planar bulk transistor to scales below 22 nm led to the development of fully depleted silicon-on-insulator (FDSOI) and fin field-effect transistor (FinFET) technologies. The 28-nm wafer planar process is the most cost-effective, and scaling towards the sub-10 nm technology node involves the complex integration of new materials (Ge, III-V, graphene) and new device architectures. To date, planar transistors still command >50% of the transistor market and applications. This work aims to downscale a planar PMOS to a 14-nm gate length using La2O3 as the high-k dielectric material. The device was virtually fabricated and electrically characterized using SILVACO. Taguchi L9 and L27 were employed to study the process parameters’ variability and interaction effects to optimize the process parameters to achieve the required output. The results obtained from simulation using the SILVACO tool show good agreement with the nominal values of PMOS threshold voltage (Vth) of −0.289 V ± 12.7% and Ioff of less than 10−7 A/µm, as projected by the International Technology Roadmap for Semiconductors (ITRS). Careful control of SiO2 formation at the Si interface and rapid annealing processing are required to achieve La2O3 thermal stability at the target equivalent oxide thickness (EOT). The effects of process variations on Vth, Ion and Ioff were investigated. The improved voltage scaling resulting from the lower Vth value is associated with the increased Ioff due to the improved drain-induced barrier lowering as the gate length decreases. The performance of the 14-nm planar bulk PMOS is comparable to the performance of the FDSOI and FinFET technologies at the same gate length. The comparisons made with ITRS, the International Roadmap for Devices and Systems (IRDS), and the simulated and experimental data show good agreement and thus prove the validity of the developed model for PMOSs. Based on the results demonstrated, planar PMOSs could be a feasible alternative to FDSOI and FinFET in balancing the trade-off between performance and cost in the 14-nm process. Full article
(This article belongs to the Special Issue Electronic and Optical Properties of Heterostructures)
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Review

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40 pages, 2232 KiB  
Review
A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations
by Mansur Mohammed Ali Gamel, Hui Jing Lee, Wan Emilin Suliza Wan Abdul Rashid, Pin Jern Ker, Lau Kuen Yau, Mahammad A. Hannan and Md. Zaini Jamaludin
Materials 2021, 14(17), 4944; https://doi.org/10.3390/ma14174944 - 30 Aug 2021
Cited by 49 | Viewed by 6276
Abstract
Generally, waste heat is redundantly released into the surrounding by anthropogenic activities without strategized planning. Consequently, urban heat islands and global warming chronically increases over time. Thermophotovoltaic (TPV) systems can be potentially deployed to harvest waste heat and recuperate energy to tackle this [...] Read more.
Generally, waste heat is redundantly released into the surrounding by anthropogenic activities without strategized planning. Consequently, urban heat islands and global warming chronically increases over time. Thermophotovoltaic (TPV) systems can be potentially deployed to harvest waste heat and recuperate energy to tackle this global issue with supplementary generation of electrical energy. This paper presents a critical review on two dominant types of semiconductor materials, namely gallium antimonide (GaSb) and indium gallium arsenide (InGaAs), as the potential candidates for TPV cells. The advantages and drawbacks of non-epitaxy and epitaxy growth methods are well-discussed based on different semiconductor materials. In addition, this paper critically examines and summarizes the electrical cell performance of TPV cells made of GaSb, InGaAs and other narrow bandgap semiconductor materials. The cell conversion efficiency improvement in terms of structural design and architectural optimization are also comprehensively analyzed and discussed. Lastly, the practical applications, current issues and challenges of TPV cells are critically reviewed and concluded with recommendations for future research. The highlighted insights of this review will contribute to the increase in effort towards development of future TPV systems with improved cell conversion efficiency. Full article
(This article belongs to the Special Issue Electronic and Optical Properties of Heterostructures)
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