Advances in Metal Oxide Semiconductor Thin Films and Devices
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Thin Films and Interfaces".
Deadline for manuscript submissions: closed (20 October 2023) | Viewed by 1309
Special Issue Editor
Interests: fabrication, treatment, and testing of materials and structures; semiconductor structures; thin films
Special Issue Information
Dear Colleagues,
Thin films and devices composed of metal oxide semiconductors are currently experiencing a disruptive change towards becoming lighter, softer, and more flexible. Thin film devices include wearable and textile integrated systems. In order to enable all these uses, the latest advancements in thin film technologies must involve their change to become flexible, lightweight, transparent, conformable, stretchable, and even biocompatible and biodegradable. Since flexible thin film transistors (TFTs) can meet each of these requirements, they are becoming increasingly important for creating platforms for the next generation of electronic devices. Modern flexible TFT technologies are particularly well suited to metal oxide semiconductors because of their great optical transparency and strong electrical performance. For the upcoming flexible energy-harvesting devices, self-powered systems that include displays, sensors, data-storage units, and information processing capabilities, any new developments in thin film devices based on metal oxide semiconductors are essential.
Dr. C.K. Sumesh
Guest Editor
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Keywords
- metal oxide semiconductor
- thin films
- devices
- wearable
- textile integrated systems
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