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Advances in III-V Integration Materials and Devices
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Advances in III-V Integration Materials and Devices

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: closed (28 February 2022) | Viewed by 3851

Special Issue Editor

Prof. Dr. Edward Yi Chang

E-Mail Website
Guest Editor
Dean of International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
Interests: III-V compound semiconductors; GaN-HEMT for high power and high frequency applications; InGaAs FinFET; InGaAs-GAA-FET; III-As solar cells; III-As-Sb nanowires; heteroepitaxy; MOCVD

Special Issue Information

Dear Colleagues,

Numerous III-V material-based devices have emerged in the past decade. Such devices have shown promising characteristics for energy-saving applications, such as very high speed and high power at high frequencies. Further devices, such as InGaAs FinFETs, are compatible with the established complementary metal oxide semiconductor (CMOS) process for low-power logic applications. For example, InAs HEMT devices have demonstrated a cut-off frequency of 800 GHz with potential device applications at THz. In addition, high bandgap and high mobility GaN HEMT can be used for power amplifiers for mobile communication (5G) and SATCOM (millimeter wave band).  High voltage GaN-HEMTs are gaining momentum for industrial power electronics  applications. These III-V semiconductor devices improve the system  performance because of their unique properties such as low effective mass, high mobility, direct bandgap and high saturation velocity. Integration of different III-V compound semiconductors (GaN, AlGaN, GaAs, InGaAs, etc.) with silicon (Si) microelectronics covers a wide range of applications by removing the limitations of silicon technology.

Fundamental aspects of new materials and heterostructure integration will be explored,  including the crystal quality, interface abruptness, surface morphology, strain and defects.  Large mismatched epilayers on different substrates will be explored. Metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) growth techniques are widely used for heterogeneous integration using different buffer platforms. Development of advanced node devices and special application devices require accurate control of processing steps such as, passivation, etching, surface treatment, e-beam patterning, metal and high-K deposition.  Critical process technologies are the key for the device development.

This Special Issue will address recent development in III-V integration materials and devices. Manuscripts from this issue will cover III-V material growth by different techniques, work on selective area epitaxy, nanowire and nanostructures, crystal structure control, III-V FinFET, III-V GAA FET, GaN-HEMT. Applications for digital, analog, power and RF, terahertz are welcome.

Prof. Dr. Edward Yi Chang
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • III-V epitaxy
  • nanowire and nanostructures
  • InGaAs FinFET
  • negative capacitance InGaAs FinFET
  • III-V gate all around FET
  • high power GaN devices
  • high frequency GaN devices
  • heteroepitaxy

Published Papers (2 papers)

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Research

10 pages, 32631 KiB  
Article
A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer
by You-Chen Weng, Yueh-Chin Lin, Heng-Tung Hsu, Min-Lu Kao, Hsuan-Yao Huang, Daisuke Ueda, Minh-Thien-Huu Ha, Chih-Yi Yang, Jer-Shen Maa, Edward-Yi Chang and Chang-Fu Dee
Materials 2022, 15(3), 703; https://doi.org/10.3390/ma15030703 - 18 Jan 2022
Cited by 4 | Viewed by 2369
Abstract
An AlGaN/GaN/Si high electron mobility transistor (HEMT) using a GaN:C buffer with a 2 nm AlGaN electron-blocking layer (EBL) is investigated for the first time for millimeter-wave applications. Compared with the double heterostructure field effect transistor (DHFET), the AlGaN/GaN HEMT with the GaN:C/EBL [...] Read more.
An AlGaN/GaN/Si high electron mobility transistor (HEMT) using a GaN:C buffer with a 2 nm AlGaN electron-blocking layer (EBL) is investigated for the first time for millimeter-wave applications. Compared with the double heterostructure field effect transistor (DHFET), the AlGaN/GaN HEMT with the GaN:C/EBL buffer has a lower vertical leakage, higher thermal stability, and better RF performance. In addition, AlGaN EBL can prevent carbon-related traps from GaN:C and improve electron confinement in 2DEG during high-frequency operation. Finally, a Pout of 31.2 dBm with PAE of 21.7% were measured at 28 GHz at 28 V. These results demonstrated the great potential of HEMTs using GaN:C with AlGaN EBL epitaxy technology for millimeter-wave applications. Full article
(This article belongs to the Special Issue Advances in III-V Integration Materials and Devices)
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10 pages, 7273 KiB  
Article
Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications
by Chun Wang, Yu-Chiao Chen, Heng-Tung Hsu, Yi-Fan Tsao, Yueh-Chin Lin, Chang-Fu Dee and Edward-Yi Chang
Materials 2021, 14(21), 6558; https://doi.org/10.3390/ma14216558 - 1 Nov 2021
Cited by 4 | Viewed by 2028
Abstract
In this work, a low-power plasma oxidation surface treatment followed by Al2O3 gate dielectric deposition technique is adopted to improve device performance of the enhancement-mode (E-mode) AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) intended for applications at millimeter-wave frequencies. The fabricated device [...] Read more.
In this work, a low-power plasma oxidation surface treatment followed by Al2O3 gate dielectric deposition technique is adopted to improve device performance of the enhancement-mode (E-mode) AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) intended for applications at millimeter-wave frequencies. The fabricated device exhibited a threshold voltage (Vth) of 0.13 V and a maximum transconductance (gm) of 484 (mS/mm). At 38 GHz, an output power density of 3.22 W/mm with a power-added efficiency (PAE) of 34.83% were achieved. Such superior performance was mainly attributed to the high-quality Al2O3 layer with a smooth surface which also suppressed the current collapse phenomenon. Full article
(This article belongs to the Special Issue Advances in III-V Integration Materials and Devices)
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