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Intense Optical Pulse Processing
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Intense Optical Pulse Processing

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".

Deadline for manuscript submissions: closed (31 December 2019) | Viewed by 26509

Special Issue Editor

Dr. Shengqiang Zhou

E-Mail Website
Guest Editor
Department of Semiconductor Materials, Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), D-01314 Dresden, Germany
Interests: pulsed laser melting; flash lamp annealing; ion implantation; hyperdoped semiconductors; magnetic materials

Special Issue Information

Dear Colleagues,

Intense optical pulse processing, utilizing either xenon flash lamps or lasers, allows a fast and selective heating of materials. The thermal processing times can be reduced down to milliseconds or nanoseconds. The processing can be precisely limited to the material surface with a minimal thermal exposure of the whole solid body. The achievable final temperature of the surface layer can be more than 2000 °C depending on the intensity of the light pulse and on the optical properties of the material. Therefore, intense optical pulse can be used for various applications in recrystallizing implanted semiconductors, solar cells, roll-to-roll flexible electronics, etc. This Special Issue invites submissions on aspects of material processing by utilizing an intense optical pulse, including full papers, communications and reviews. Topics can include, but are not limited to, the following:

  • Doping semiconductors
  • Thin film solar cells
  • Energy materials
  • Flexible electronics
  • Ion beam modified materials
  • Roll-to-roll processing
  • Flash lamp annealing
  • Pulsed laser melting

Dr. Shengqiang Zhou
Guest Editor

Manuscript Submission Information

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Keywords

  • Intense optical pulse processing
  • Pulsed laser melting
  • Flash lamp annealing
  • thin films
  • flexible electronics

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Published Papers (7 papers)

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Research

10 pages, 1482 KiB  
Article
Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing
by Slawomir Prucnal, Jerzy Żuk, René Hübner, Juanmei Duan, Mao Wang, Krzysztof Pyszniak, Andrzej Drozdziel, Marcin Turek and Shengqiang Zhou
Materials 2020, 13(6), 1408; https://doi.org/10.3390/ma13061408 - 20 Mar 2020
Cited by 12 | Viewed by 3400
Abstract
Controlled doping with an effective carrier concentration higher than 1020 cm−3 is a key challenge for the full integration of Ge into silicon-based technology. Such a highly doped layer of both p- and n type is needed to provide ohmic contacts [...] Read more.
Controlled doping with an effective carrier concentration higher than 1020 cm−3 is a key challenge for the full integration of Ge into silicon-based technology. Such a highly doped layer of both p- and n type is needed to provide ohmic contacts with low specific resistance. We have studied the effect of ion implantation parameters i.e., ion energy, fluence, ion type, and protective layer on the effective concentration of electrons. We have shown that the maximum electron concentration increases as the thickness of the doping layer decreases. The degradation of the implanted Ge surface can be minimized by performing ion implantation at temperatures that are below −100 °C with ion flux less than 60 nAcm−2 and maximum ion energy less than 120 keV. The implanted layers are flash-lamp annealed for 20 ms in order to inhibit the diffusion of the implanted ions during the recrystallization process. Full article
(This article belongs to the Special Issue Intense Optical Pulse Processing)
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10 pages, 4110 KiB  
Article
Numerical and Experimental Investigation of Morphological Modification on Fused Silica Using CO2 Laser Ablation
by Li Zhou, Youen Jiang, Peng Zhang, Hui Wei, Wei Fan, Xuechun Li and Jianqiang Zhu
Materials 2019, 12(24), 4109; https://doi.org/10.3390/ma12244109 - 9 Dec 2019
Cited by 8 | Viewed by 3902
Abstract
In this paper, a numerical model based on the finite-element method for predicting the morphological evolution during CO2 laser ablation on fused silica is developed and examined experimentally. Adopting the optimized parameters that were obtained from the model, a typical cone-shaped multi-stage [...] Read more.
In this paper, a numerical model based on the finite-element method for predicting the morphological evolution during CO2 laser ablation on fused silica is developed and examined experimentally. Adopting the optimized parameters that were obtained from the model, a typical cone-shaped multi-stage structure with a diameter of 2 mm and a slope angle of 10.4° was sufficiently polished. Both the roughness and the transparency of the surface structure were significantly improved. The characterized slope angle of the continuous surface is exactly consistent with the predicted value, and the ablation depth is 32 ± 1.247 µm with a deviation of 1.7% (RMS, root mean square). The deviation is principally caused by the neglect of melting displacement in simulation and the irregularity in actual stepping structures. These results indicate that the numerical model can simulate morphological modification of CO2 laser ablation with a high degree of reliability. It could further be used to optimize processing parameters for customizing continuous fused silica surfaces, which could facilitate industrial manufacturing of freeform optics. Full article
(This article belongs to the Special Issue Intense Optical Pulse Processing)
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Graphical abstract

15 pages, 7431 KiB  
Article
Numerical Simulation of Stainless Steel-Carbon Steel Laminated Plate Considering Interface in Pulsed Laser Bending
by Zihui Li and Xuyue Wang
Materials 2019, 12(9), 1410; https://doi.org/10.3390/ma12091410 - 30 Apr 2019
Cited by 5 | Viewed by 2837
Abstract
According to ANSYS software and an electron probe experiment, a multi-layer finite element model (FEM) of pulsed laser bending of stainless steel-carbon steel laminated plate (SCLP) including interfaces has been established. Compared with a single-layer stainless steel plate (SLSP), based on a temperature [...] Read more.
According to ANSYS software and an electron probe experiment, a multi-layer finite element model (FEM) of pulsed laser bending of stainless steel-carbon steel laminated plate (SCLP) including interfaces has been established. Compared with a single-layer stainless steel plate (SLSP), based on a temperature gradient mechanism considering the depth of the plastic zone, the influence of the interfaces and carbon steel layer in the model of the SCLP on the bending angle has been studied by analyzing the distributions of the temperature field, stress field and strain field in the thickness direction. The simulation results show that the temperature of the SCLP in the thickness direction is lower than that of the SLSP due to interfacial thermal resistance of the interface and fast heat conduction of the carbon steel layer, resulting in a smaller depth of the plastic zone of the SCLP defined by the recrystallization temperature. Affected by the temperature distribution, the plastic stress and strain of the SCLP in the plastic zone are smaller than those of the SLSP, leading to a smaller bending angle of the SCLP. When the laser power is 140 W, the scanning speed is 400 mm/min, the defocus distance is 10 mm, and the scanning time is 1, the bending angle of the SCLP is 1.336°, which is smaller than the bending angle 1.760° of the SLSP. The experimental verifications show that the maximum error of the bending angle is 3.74%, which verifies that the model of laser bending is usable and contributes to refining the laser bending mechanism of the SCLP. Full article
(This article belongs to the Special Issue Intense Optical Pulse Processing)
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12 pages, 3011 KiB  
Article
Simulation and Experimental Study on Residual Stress Distribution in Titanium Alloy Treated by Laser Shock Peening with Flat-Top and Gaussian Laser Beams
by Xiang Li, Weifeng He, Sihai Luo, Xiangfan Nie, Le Tian, Xiaotai Feng and Rongkai Li
Materials 2019, 12(8), 1343; https://doi.org/10.3390/ma12081343 - 24 Apr 2019
Cited by 37 | Viewed by 4438
Abstract
The residual stress introduced by laser shock peening (LSP) is one of the most important factors in improving metallic fatigue life. The shock wave pressure has considerable influence on residual stress distribution, which is affected by the distribution of laser energy. In this [...] Read more.
The residual stress introduced by laser shock peening (LSP) is one of the most important factors in improving metallic fatigue life. The shock wave pressure has considerable influence on residual stress distribution, which is affected by the distribution of laser energy. In this work, a titanium alloy is treated by LSP with flat-top and Gaussian laser beams, and the effects of spatial energy distribution on residual stress are investigated. Firstly, a 3D finite element model (FEM) is developed to predict residual stress with different spatial energy distribution, and the predicted residual stress is validated by experimental data. Secondly, three kinds of pulse energies, 3 J, 4 J and 5 J, are chosen to study the difference of residual stress introduced by flat-top and Gaussian laser beams. Lastly, the effect mechanism of spatial energy distribution on residual stress is revealed. Full article
(This article belongs to the Special Issue Intense Optical Pulse Processing)
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9 pages, 2092 KiB  
Article
Formation of Subwavelength Periodic Triangular Arrays on Tungsten through Double-Pulsed Femtosecond Laser Irradiation
by Hongzhen Qiao, Jianjun Yang, Jing Li, Qi Liu, Jie Liu and Chunlei Guo
Materials 2018, 11(12), 2380; https://doi.org/10.3390/ma11122380 - 26 Nov 2018
Cited by 11 | Viewed by 3329
Abstract
We present a mask-free strategy for fabricating two-dimensional subwavelength periodic triangular arrays on tungsten, by focusing two orthogonally polarized and temporally delayed femtosecond laser beams using a cylindrical lens. In stark contrast to the commonly observed structures of either a single ablation spot [...] Read more.
We present a mask-free strategy for fabricating two-dimensional subwavelength periodic triangular arrays on tungsten, by focusing two orthogonally polarized and temporally delayed femtosecond laser beams using a cylindrical lens. In stark contrast to the commonly observed structures of either a single ablation spot or a one-dimensional grating, we obtained highly uniform periodic triangular arrays on the laser-exposed surface, with three equilateral sides each of 480 nm in length and about 100 nm in modulation depth. The triangular features varied with both the laser energy and the scanning speed. We found that the optical reflectivity of such a surface reduces significantly within the spectral range of 700–2500 nm. The triangular structure morphology can also be controlled by varying the time delay between the two laser beams. Full article
(This article belongs to the Special Issue Intense Optical Pulse Processing)
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16 pages, 20481 KiB  
Article
Equivalent Properties of Transition Layer Based on Element Distribution in Laser Bending of 304 Stainless Steel/Q235 Carbon Steel Laminated Plate
by Zihui Li, Xuyue Wang and Yonghao Luo
Materials 2018, 11(11), 2326; https://doi.org/10.3390/ma11112326 - 19 Nov 2018
Cited by 7 | Viewed by 3567
Abstract
Compared with the single-component metal plate, there is a special transition layer on the joint interface between two kinds of materials in the stainless steel-carbon steel laminated plate (SCLP). In order to describe the finite element model of laser bending accurately, it is [...] Read more.
Compared with the single-component metal plate, there is a special transition layer on the joint interface between two kinds of materials in the stainless steel-carbon steel laminated plate (SCLP). In order to describe the finite element model of laser bending accurately, it is of great significance to determine material properties of the transition layer. Based on the element distribution, an equivalent method is adopted to calculate thermal conductivity, thermal expansion coefficient, elastic modulus, density, Poisson’s ratio, and specific heat capacity of transition layer. The electron probe experiments show that the transition layer is formed by interfacial element diffusion with thickness of 7 μm. Besides, the volume fraction of stainless steel (46.63%) and carbon steel (53.37%) in the transition layer is tested by energy dispersive spectrometer, respectively. Through the equivalent method, a laser bending model of SCLP is simulated by ANSYS software to predict the bending angle under different parameters. The experimental verification shows that the maximum of bending angle errors is 3.74%, which is lower than the maximum 4.93% of errors calculated by the mean value method. The analysis verifies that the laser bending model is feasible and contributes to improving the accuracy of modeling SCLP in the laser bending process. Full article
(This article belongs to the Special Issue Intense Optical Pulse Processing)
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7 pages, 963 KiB  
Article
Fabrication of an Optical Waveguide-Mode-Field Compressor in Glass Using a Femtosecond Laser
by Zhengming Liu, Yang Liao, Zhenhua Wang, Zhihao Zhang, Zhaoxiang Liu, Lingling Qiao and Ya Cheng
Materials 2018, 11(10), 1926; https://doi.org/10.3390/ma11101926 - 10 Oct 2018
Cited by 11 | Viewed by 4220
Abstract
We report on fabrication of an optical waveguide-mode-field compressor in glass using a femtosecond laser. Our approach is based on building up a stress field within the waveguiding area which is realized by sandwiching the waveguide between a pair of laser-induced-modification-tracks. To induce [...] Read more.
We report on fabrication of an optical waveguide-mode-field compressor in glass using a femtosecond laser. Our approach is based on building up a stress field within the waveguiding area which is realized by sandwiching the waveguide between a pair of laser-induced-modification-tracks. To induce an adiabatic conversion of the optical mode in the waveguide, the tracks are intentionally designed to be tapered along the waveguide. We show that our technique can allow for reducing the mode field size in a single mode waveguide from more than 10 μm to around 7 μm. Full article
(This article belongs to the Special Issue Intense Optical Pulse Processing)
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