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Synthesis, Structure and Applications of 2D Heterostructures

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".

Deadline for manuscript submissions: closed (20 February 2023) | Viewed by 2382

Special Issue Editor

School of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao, China
Interests: 2D nanomaterials; heterostructures; synthesis; applications

Special Issue Information

Dear Colleagues,

2D nanomaterials including graphene, transition metal dichalcogenides (TMDs), black phosphorus (BP), MXenes, metal-organic framework (MOF), hexagonal boron nitride (h-BN), layered double hydroxides (LDHs) and transition metal oxides (TMOs) provide a series of advantages including high specific surface area, excellent semiconductor performance and abundant surface-active sites. Despite this, 2D nanomaterials also have their own limitations when they are employed in diverse applications. 2D heterostructures can overcome the limitations of individual 2D nanomaterials. Novel properties which are not related to any of the 2D nanomaterials can also be realized.

The aim of the Special Issue Synthesis, Structure and Applications of 2DHeterostructures is to provide updated design strategies of 2D heterostructures and explore the structure-property correlations between various 2D junctions including 0D/2D, 1D/2D, 2D/2D and 3D/2D systems and their multifunctional applications. Future research perspectives for the exploitation of emerging 2D heterostructures along with novel synthetic strategies will also be proposed.

Dr. Ya Xiong
Guest Editor

Manuscript Submission Information

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Keywords

  • 2D nanomaterials
  • 2D heterostructures
  • synthesis
  • applications
  • modification strategies
  • 0D/2D heterostructures
  • 1D/2D heterostructures
  • 2D/2D heterostructures
  • 3D/2D heterostructures

Published Papers (1 paper)

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Research

8 pages, 2735 KiB  
Article
High-κ van der Waals Oxide MoO3 as Efficient Gate Dielectric for MoS2 Field-Effect Transistors
by Junfan Wang, Haojie Lai, Xiaoli Huang, Junjie Liu, Yueheng Lu, Pengyi Liu and Weiguang Xie
Materials 2022, 15(17), 5859; https://doi.org/10.3390/ma15175859 - 25 Aug 2022
Cited by 5 | Viewed by 2149
Abstract
Two-dimensional van der Waals crystals (2D vdW) are recognized as one of the potential materials to solve the physical limits caused by size scaling. Here, vdW metal oxide MoO3 is applied with the gate dielectric in a 2D field-effect transistor (FET). Due [...] Read more.
Two-dimensional van der Waals crystals (2D vdW) are recognized as one of the potential materials to solve the physical limits caused by size scaling. Here, vdW metal oxide MoO3 is applied with the gate dielectric in a 2D field-effect transistor (FET). Due to its high dielectric constant and the good response of MoS2 to visible light, we obtained a field effect transistor for photodetection. In general, the device exhibits a threshold voltage near 0 V, Ion/Ioff ratio of 105, electron mobility about 85 cm2 V−1 s−1 and a good response to visible light, the responsivity is near 5 A/W at low laser power, which shows that MoO3 is a potential material as gate dielectric. Full article
(This article belongs to the Special Issue Synthesis, Structure and Applications of 2D Heterostructures)
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