Preparation and Characterization of Dielectric and Semiconductor Materials
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".
Deadline for manuscript submissions: closed (10 August 2022) | Viewed by 4488
Special Issue Editor
Special Issue Information
Dear Colleagues,
We cordially invite you to submit your research work to our Special Issue “Preparation and Characterization of Dielectric and Semiconductor Materials”. Novel dielectric and semiconductor materials play a very important role in the basic research and application of modern and future nanotechnology. With the demand for high functionality of electronic products and the high speed and high frequency of signal transmission, the number of passive devices and active devices required in the semiconductor manufacturing process has greatly increased.
For the dielectric layer of the transistor gate, high-permittivity materials are currently used to replace traditional silicon dioxide. The main reason for this is that high-permittivity materials can form a thicker dielectric layer, which reduces the leakage current caused by the tunneling effect. The use of low dielectric constant dielectric layer materials in electronic components can effectively solve the RC-delay effect. The high-speed signal transmission of mobile communications relies on high-efficiency transceiver antennas and low-dielectric loss transmission media. The functions and applications of semiconductor materials are very extensive and diverse. Among them, compound semiconductor materials have several key physical characteristics, such as a wide energy gap, high electron mobility, high power density, large penetration voltage, high thermal conductivity, high cut-off frequency, and high melting point, which play an important role in modern electronic device applications.
The aim of this Special Issue is to present the latest materials and experimental research related to the preparation, characterization, and application of dielectric and semiconductor materials. Both research papers and review articles are invited. Original and advanced research results on novel dielectric and semiconductor materials and device characteristics are welcome to be published in this Special Issue.
In particular, the topics of interest include but are not limited to:
- Nanomaterials;
- Dielectric materials;
- Ferroelectric, piezoelectric, and pyroelectric materials;
- Semiconductor materials;
- Compound and composite;
- Low dielectric loss;
- High-K materials;
- Active and passive devices;
- Photoelectric devices.
Prof. Dr. Hone-Zern Chen
Guest Editor
Manuscript Submission Information
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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
Keywords
- nanomaterials
- semiconductors
- insulators
- compound and composite
- low dielectric loss
- high-k materials
- active and passive devices
- sensors
