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Photodetectors: Research Progress, Structure and Materials

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: closed (20 October 2023) | Viewed by 3073

Special Issue Editor

Diamond Optoelectronic Materials and Devices Group, Zhengzhou University, Zhengzhou, China
Interests: wide-bandgap semiconductors; optoelectronic devices; photodetectors; diamond; gallium oxide

Special Issue Information

Dear Colleagues,

Photodetectors, which convert optical signals into electrical signals, have attracted notable research interest, due to their great potential for applications in information technology. Great efforts have been made to develop high-performance and functional photodetectors. Moreover, to meet the requirements of practical applications, various materials, device structures, physical effects, and micro/nano structures have been widely applied. This Special Issue, entitled Photodetectors: Research Progress, Structure and Materials, aims to cover the most recent advances in the design, materials, characterization, modeling, simulation, functions, and applications of photodetectors. Therefore, we invite you to submit manuscripts for this Special Issue. Full papers, communications, and reviews are all welcome.

Dr. Xun Yang
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • photodetectors
  • phototransistors
  • imaging
  • thin-film materials
  • nanostructures
  • functional devices
  • ultraviolet
  • infrared

Published Papers (1 paper)

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Research

10 pages, 3079 KiB  
Article
X-ray Detectors Based on Ga2O3 Microwires
by Chongyang Zhang, Wenjie Dou, Xun Yang, Huaping Zang, Yancheng Chen, Wei Fan, Shaoyi Wang, Weimin Zhou, Xuexia Chen and Chongxin Shan
Materials 2023, 16(13), 4742; https://doi.org/10.3390/ma16134742 - 30 Jun 2023
Cited by 5 | Viewed by 2686
Abstract
X-ray detectors have numerous applications in medical imaging, industrial inspection, and crystal structure analysis. Gallium oxide (Ga2O3) shows potential as a material for high-performance X-ray detectors due to its wide bandgap, relatively high mass attenuation coefficient, and resistance to [...] Read more.
X-ray detectors have numerous applications in medical imaging, industrial inspection, and crystal structure analysis. Gallium oxide (Ga2O3) shows potential as a material for high-performance X-ray detectors due to its wide bandgap, relatively high mass attenuation coefficient, and resistance to radiation damage. In this study, we present Sn-doped Ga2O3 microwire detectors for solar-blind and X-ray detection. The developed detectors exhibit a switching ratio of 1.66 × 102 under X-ray irradiation and can operate stably from room temperature to 623 K, which is one of the highest reported operating temperatures for Ga2O3 X-ray detectors to date. These findings offer a promising new direction for the design of Ga2O3-based X-ray detectors. Full article
(This article belongs to the Special Issue Photodetectors: Research Progress, Structure and Materials)
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