Magnetic Topological Insulators
A special issue of Materials (ISSN 1996-1944).
Deadline for manuscript submissions: closed (20 January 2023) | Viewed by 2207
Special Issue Editor
Special Issue Information
Dear Colleagues,
Topological insulators (TIs) are materials with insulating bulk states and robust conducting edge modes protected by time reversal symmetry, and offer opportunities for spintronics, non-Abelian quantum computing and energy-efficient electronic devices. Intrinsic TIs are usually nonmagnetic materials possessing linear dispersed surface states with helical-textured spin configuration. Magnetism has been identified as a useful control parameter in TIs because the spin degree-of-freedom introduces a perturbation that can break time reversal symmetry, opening new channels for backscattering, generating axion electrodynamics, and opening a gap at Dirac cones’ surface states. A special case occurs when ferromagnetic order in a TI system induces a zero magnetic field quantized Hall resistance response: the quantum anomalous Hall effect (QAHE).
This Special Issue aims to understand the QAHE in magnetic topological insulators, which will inspire more quantum devices based on this phenomenon. Emphasis is placed on the sample fabrication, magnetism, electronic band structure and transport properties of magnetic topological insulators. The electronic band structure is highly dependent on magnetic ordering in a magnetic TI, which suggests that the magnetic characterization via magnetometer, optical spectroscopy and neutron scattering are also very important to this Special Issue. We welcome the submission of original research articles, reviews and communications related to DFT calculation, crystal structure and magnetic structure study, as well as electronic properties.
Dr. Weiyao Zhao
Guest Editor
Manuscript Submission Information
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Keywords
- topological insulator
- berry phase
- ferromagnetism
- anomalous hall effect
