Silicon-Based Photonic Technology and Devices

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A:Physics".

Deadline for manuscript submissions: 30 June 2025 | Viewed by 48

Special Issue Editors


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Guest Editor
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Interests: Si-based III-V devices; MOCVD; semiconductor devices

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Guest Editor
State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
Interests: silicon-based PICs; micro/nano-photonics; optoelectronics

Special Issue Information

Dear Colleagues,

Silicon-based photonic integrated circuits (PICs) developed on standard silicon platforms can meet the information interaction needs of society in the “post-Moore’s Law era”. They are emerging as a competitive technology that can be used to resolve the “communication bottleneck” in current data centers and high-performance computing systems, where issues related to the power and speed of traditional electrical interconnects have become increasingly important. Using photons instead of electrons for data transmission offers advantages such as high-speed operation, low power consumption, and high-capacity transmission. Building PICs on industry-standard Si platforms lends them additional benefits like an ultra-low cost, mass manufacturing, high integration density, and scalability—essential features for future consumer applications like automobiles, metrology, and bio/chemical sensing. Furthermore, constructing PICs on Si facilitates their co-integration with Si microelectronics and enables the development of high-performance multi-functional Si-based optoelectronic integrated circuits.

Silicon exhibits several properties that make it a promising photonics material: it possesses a high refractive index compared to that of its oxide counterparts, low loss at communication wavelengths, and a substantial thermo-optic coefficient for tuning purposes. Leveraging these attributes has led to the demonstration of various photonic components on integrated Si photonics platforms, including mode couplers, tunable filters, and optical modulators. However, due to its nature as an indirect bandgap material, silicon's light emission efficiency remains limited; thus, laser sources based on silicon continue to pose significant challenges in terms of their integration into photonics.

This Special Issue aims to present research papers and review articles that focus on silicon-based photonic technology and devices, including the concepts and physics underlying silicon-based laser sources, waveguides, modulators, amplifiers, couplers, filters, and photodetectors and their fabrication processes.

Dr. Jian Li
Dr. Yisu Yang
Guest Editors

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Keywords

  • silicon-based photonics
  • PICs
  • quantum well/dot lasers
  • modulators
  • detectors
  • material growth
  • device processes

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Published Papers (1 paper)

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Research

14 pages, 2793 KiB  
Article
Designs of Charge-Balanced Edge Termination Structures for 3.3 kV SiC Power Devices Using PN Multi-Epitaxial Layers
by Sangyeob Kim and Ogyun Seok
Micromachines 2025, 16(1), 47; https://doi.org/10.3390/mi16010047 (registering DOI) - 30 Dec 2024
Abstract
We demonstrated 3.3 kV silicon carbide (SiC) PiN diodes using a trenched ring-assisted junction termination extension (TRA-JTE) with PN multi-epitaxial layers. Multiple P+ rings and width-modulated multiple trenches were utilized to alleviate electric-field crowding at the edges of the junction to quantitively [...] Read more.
We demonstrated 3.3 kV silicon carbide (SiC) PiN diodes using a trenched ring-assisted junction termination extension (TRA-JTE) with PN multi-epitaxial layers. Multiple P+ rings and width-modulated multiple trenches were utilized to alleviate electric-field crowding at the edges of the junction to quantitively control the effective charge (Qeff) in the termination structures. The TRA-JTE forms with the identical P-type epitaxial layer, which enables high-efficiency hole injection and conductivity modulation. The effects of major design parameters for the TRA-JTE, such as the number of trenches (Ntrench) and depth of trenches (Dtrench), were analyzed to obtain reliable blocking capabilities. Furthermore, the single-zone-JTE (SZ-JTE), ring-assisted-JTE (RA-JTE), and trenched-JTE (T-JTE) were also evaluated for comparative analysis. Our results show that the TRA-JTE exhibited the highest breakdown voltage (BV), exceeding 4.2 kV, and the strongest tolerance against variance in doping concentration for the JTE (NJTE) compared to both the RA-JTE and T-JTE due to the charge-balanced edge termination by multiple P+ rings and trench structures. Full article
(This article belongs to the Special Issue Silicon-Based Photonic Technology and Devices)
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