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Micromachines
Special Issues
Recent Advances in Molecular/Nano Electronics
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Recent Advances in Molecular/Nano Electronics

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "E：Engineering and Technology".

Deadline for manuscript submissions: closed (31 October 2023) | Viewed by 3326

Special Issue Editors

Prof. Dr. Mohammad Taghi Ahmadi

E-Mail Website
Guest Editor
1. Device Modelling Group, School of Engineering, University of Warwick, Coventry CV4 7AL, UK
2. Department of Physics, Faculty of Science, Urmia University, Urmia, Iran
Interests: nano/molecular electronic devices; nanoscale material modelling and simulation and application; quantum, phonon and spin transport in nano-scale devices; nano/molecular scale sensor modelling and simulation; spintronic; nanoscale piezoelectric device/materials
Prof. Dr. Arash Sabatyan

E-Mail Website
Guest Editor
Physics Department, Faculty of Sciences, Urmia University, Urmia, Iran
Interests: diffractive optics; laser beam shaping; laser beam structuring; diffractive metrology
Dr. Meisam Rahmani

E-Mail Website
Guest Editor
Department of Electrical and Computer Engineering, Buein Zahra Technical University, Buein Zahra, Qazvin, Iran
Interests: nanoelectronic; quantum electronics; molecular electronics; multiscale modeling; nanoscale devices simulation
Dr. Michael Loong Peng Tan

E-Mail Website
Guest Editor
School of Electrical Engineering, Faculty of Engineering, Universiti Teknologi Malaysia, Skudai, Malaysia
Interests: semiconductor material modeling; low dimensional nanostructure; tight-binding approach

Special Issue Information

Dear Colleagues,

Recently, technological development at the nano/molecular scale has improved electronic device capacity. Crucial to this development has been our expanding knowledge regarding principal nano/molecular devices as a multi-disciplinary field engaged with electronics, physics, chemistry, biology and, indeed, nearly all branches of science and engineering. Amazing electronic devices, especially those based on new categories of materials rather than conventional silicon, are opening new frontiers in technology.   

Thus, the search for alternatives to conventional silicon technology in line with Moore’s law requires nano/molecular electronic investigation. In fact, the rapid growth of knowledge and technology in these media has begun, and a great deal of research effort has been applied in this domain, mainly regarding nano electro mechanical systems (NEMS). New material application, fabrication, simulation and modelling for NEMS and molecular devices will lead to future competition in this field thanks to their fantastic advantages (less energy consumption, high sensitivity, compact size, and high operating speed).

In this Special Issue, we invite contributions (original research papers, review articles, and brief communications) which focus on the latest advances and challenges in molecular/nano electronics from device and material perspectives. This Issue provides an opportunity for scientists in the field of molecular/nano electronic devices to contribute to nanotechnology’s role in the 21st century Industrial Revolution. All researchers working in the field of nano/molecular electronic and quantum electronics are welcome to submit their works for possible publication in our Special Issue.

Prof. Dr. Mohammad Taghi Ahmadi
Prof. Dr. Arash Sabatyan
Dr. Meisam Rahmani
Dr. Michael Loong Peng Tan
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nano/molecular electronic devices
  • nanoscale material modelling, simulation, and application
  • quantum, phonon, and spin transport in nano-scale devices
  • nano/molecular-scale optoelectronic device modelling and simulation
  • nano/molecular-scale piezoelectric devices/materials
  • nano/molecular-scale diodes, transistors and sensors
  • zero-, one-, and two-dimensional devices
  • quantum dots, wires, and tubes application in electronics
  • quantum and phonon interference in nano/molecular electronics

Published Papers (2 papers)

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Research

14 pages, 2834 KiB  
Article
Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS2 Field-Effect Transistors
by Huei Chaeng Chin, Afiq Hamzah, Nurul Ezaila Alias and Michael Loong Peng Tan
Micromachines 2023, 14(6), 1235; https://doi.org/10.3390/mi14061235 - 12 Jun 2023
Cited by 1 | Viewed by 1295
Abstract
Molybdenum disulfide (MoS2) has distinctive electronic and mechanical properties which make it a highly prospective material for use as a channel in upcoming nanoelectronic devices. An analytical modeling framework was used to investigate the I–V characteristics of field-effect transistors based on [...] Read more.
Molybdenum disulfide (MoS2) has distinctive electronic and mechanical properties which make it a highly prospective material for use as a channel in upcoming nanoelectronic devices. An analytical modeling framework was used to investigate the I–V characteristics of field-effect transistors based on MoS2. The study begins by developing a ballistic current equation using a circuit model with two contacts. The transmission probability, which considers both the acoustic and optical mean free path, is then derived. Next, the effect of phonon scattering on the device was examined by including transmission probabilities into the ballistic current equation. According to the findings, the presence of phonon scattering caused a decrease of 43.7% in the ballistic current of the device at room temperature when L = 10 nm. The influence of phonon scattering became more prominent as the temperature increased. In addition, this study also considers the impact of strain on the device. It is reported that applying compressive strain could increase the phonon scattering current by 13.3% at L = 10 nm at room temperature, as evaluated in terms of the electrons’ effective masses. However, the phonon scattering current decreased by 13.3% under the same condition due to the existence of tensile strain. Moreover, incorporating a high-k dielectric to mitigate the impact of scattering resulted in an even greater improvement in device performance. Specifically, at L = 6 nm, the ballistic current was surpassed by 58.4%. Furthermore, the study achieved SS = 68.2 mV/dec using Al2O3 and an on–off ratio of 7.75 × 104 using HfO2. Finally, the analytical results were validated with previous works, showing comparable agreement with the existing literature. Full article
(This article belongs to the Special Issue Recent Advances in Molecular/Nano Electronics)
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13 pages, 2025 KiB  
Article
A Phenomenological Model for Electrical Transport Characteristics of MSM Contacts Based on GNS
by Meisam Rahmani, Hassan Ghafoorifard and Mohammad Taghi Ahmadi
Micromachines 2023, 14(1), 184; https://doi.org/10.3390/mi14010184 - 11 Jan 2023
Viewed by 1437
Abstract
Graphene nanoscroll, because of attractive electronic, mechanical, thermoelectric and optoelectronics properties, is a suitable candidate for transistor and sensor applications. In this research, the electrical transport characteristics of high-performance field effect transistors based on graphene nanoscroll are studied in the framework of analytical [...] Read more.
Graphene nanoscroll, because of attractive electronic, mechanical, thermoelectric and optoelectronics properties, is a suitable candidate for transistor and sensor applications. In this research, the electrical transport characteristics of high-performance field effect transistors based on graphene nanoscroll are studied in the framework of analytical modeling. To this end, the characterization of the proposed device is investigated by applying the analytical models of carrier concentration, quantum capacitance, surface potential, threshold voltage, subthreshold slope and drain induced barrier lowering. The analytical modeling starts with deriving carrier concentration and surface potential is modeled by adopting the model of quantum capacitance. The effects of quantum capacitance, oxide thickness, channel length, doping concentration, temperature and voltage are also taken into account in the proposed analytical models. To investigate the performance of the device, the current-voltage characteristics are also determined with respect to the carrier density and its kinetic energy. According to the obtained results, the surface potential value of front gate is higher than that of back side. It is noteworthy that channel length affects the position of minimum surface potential. The surface potential increases by increasing the drain-source voltage. The minimum potential increases as the value of quantum capacitance increases. Additionally, the minimum potential is symmetric for the symmetric structure (Vfg = Vbg). In addition, the threshold voltage increases by increasing the carrier concentration, temperature and oxide thickness. It is observable that the subthreshold slope gets closer to the ideal value of 60 mV/dec as the channel length increases. As oxide thickness increases the subthreshold slope also increases. For thinner gate oxide, the gate capacitance is larger while the gate has better control over the channel. The analytical results demonstrate a rational agreement with existing data in terms of trends and values. Full article
(This article belongs to the Special Issue Recent Advances in Molecular/Nano Electronics)
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