Advances in Diamond-Based Devices and Their Manufacturing

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D:Materials and Processing".

Deadline for manuscript submissions: closed (15 July 2023) | Viewed by 2988

Special Issue Editor


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Guest Editor
School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, China
Interests: in situ nanomechanics; electron microscopy; elastic strain engineering; nanostructured materials

Special Issue Information

Dear Colleagues,

As the commercially viable methods for synthesizing diamond grow rapidly, diamond-based devices have attracted considerable interest in recent years as possible alternatives for high-power, high-frequency applications due to their unique material properties, such as high stiffness, outstanding thermal conductivity, ultrawide bandgap, ultrahigh dielectric breakdown field, high electron and hole mobilities, etc. Several challenges remain, including the manufacture of high-quality wafer-scale diamond substrates, effective n-type doping in diamond semiconductors, and the improvement of device processing efficiency, although we have made some progress in diamond-based Schottky barrier diodes, metal–semiconductor field–effect transistors (MESFETs), metal–oxide–semiconductor FETs, etc. Accordingly, this Special Issue seeks to showcase research papers, letters, and review articles that focus on advances in manufacturing diamond-based structures in microelectronics, optoelectronics, and quantum information technologies.

We have the pleasure to invite you to submit your research articles on new diamond-based device structures, high-quality diamond synthesis, diamond-based devices with improved performance, and the device preparation process to our special issue "Advances in Diamond-Based Devices and Their Manufacturing." We look forward to receiving your submissions.

Dr. Chaoqun Dang
Guest Editor

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Keywords

  • diamond-based device
  • ultra-wide bandgap semiconductor
  • micro/nanofabrication
  • device performance

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Published Papers (2 papers)

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Research

13 pages, 6798 KiB  
Article
Vertical Diamond p-n Junction Diode with Step Edge Termination Structure Designed by Simulation
by Guangshuo Cai, Caoyuan Mu, Jiaosheng Li, Liuan Li, Shaoheng Cheng, Qiliang Wang and Xiaobiao Han
Micromachines 2023, 14(9), 1667; https://doi.org/10.3390/mi14091667 - 26 Aug 2023
Cited by 3 | Viewed by 1256
Abstract
In this paper, diamond-based vertical p-n junction diodes with step edge termination are investigated using a Silvaco simulation (Version 5.0.10.R). Compared with the conventional p-n junction diode without termination, the step edge termination shows weak influences on the forward characteristics and helps to [...] Read more.
In this paper, diamond-based vertical p-n junction diodes with step edge termination are investigated using a Silvaco simulation (Version 5.0.10.R). Compared with the conventional p-n junction diode without termination, the step edge termination shows weak influences on the forward characteristics and helps to suppress the electric field crowding. However, the breakdown voltage of the diode with simple step edge termination is still lower than that of the ideal parallel-plane one. To further enhance the breakdown voltage, we combine a p-n junction-based junction termination extension on the step edge termination. After optimizing the structure parameters of the device, the depletion regions formed by the junction termination extension overlap with that of the p-n junction on the top mesa, resulting in a more uniform electric field distribution and higher device performance. Full article
(This article belongs to the Special Issue Advances in Diamond-Based Devices and Their Manufacturing)
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10 pages, 2889 KiB  
Article
A Simulation of Thermal Management Using a Diamond Substrate with Nanostructures
by Tingting Liu, Kaiwen Zheng, Tao Tao, Wenxiao Hu, Kai Chen, Ting Zhi, Yucong Ye, Zili Xie, Yu Yan, Bin Liu and Rong Zhang
Micromachines 2023, 14(8), 1559; https://doi.org/10.3390/mi14081559 - 5 Aug 2023
Viewed by 1372
Abstract
In recent years, the rapid progress in the field of GaN-based power devices has led to a smaller chip size and increased power usage. However, this has given rise to increasing heat aggregation, which affects the reliability and stability of these devices. To [...] Read more.
In recent years, the rapid progress in the field of GaN-based power devices has led to a smaller chip size and increased power usage. However, this has given rise to increasing heat aggregation, which affects the reliability and stability of these devices. To address this issue, diamond substrates with nanostructures were designed and investigated in this paper. The simulation results confirmed the enhanced performance of the device with diamond nanostructures, and the fabrication of a diamond substrate with nanostructures is demonstrated herein. The diamond substrate with square nanopillars 2000 nm in height exhibited optimal heat dissipation performance. Nanostructures can effectively decrease heat accumulation, resulting in a reduction in temperature from 121 °C to 114 °C. Overall, the simulation and experimental results in this work may provide guidelines and help in the development of the advanced thermal management of GaN devices using diamond micro/nanostructured substrates. Full article
(This article belongs to the Special Issue Advances in Diamond-Based Devices and Their Manufacturing)
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