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A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A：Physics".

Deadline for manuscript submissions: closed (31 January 2022) | Viewed by 12057

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Special Issue Editor

Prof. Dr. Guoqiang Wu

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Guest Editor

The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
Interests: microelectromechanical systems (MEMS); MEMS resonators; resonant sensors; piezoelectric devices

Special Issue Information

Dear Colleagues,

The radio frequency microelectromechanical system (RF MEMS) has been one of the most important applications of MEMS technologies and has long been a research hotspot since the 1990s. Facing the challenges posted by 5G and Internet of Things (IoT), RF MEMSs have shown great potential in wireless applications due to their low cost, low power consumption and excellent RF performance.

This Special Issue seeks to focus on RF MEMS devices and systems. We would like to invite you to contribute reviews, new discoveries, and authentic results to participate in this great event. Areas of interest for this Special Issue include designs, fabrications, novel applications, packaging techniques and challenges, material developments, as well as reliability, for RF MEMSs. We look forward to receiving your submissions!

Prof. Dr. Guoqiang Wu
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

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Keywords

RF MEMS
MEMS resonators
MEMS oscillators
filters
MEMS switches

Published Papers (5 papers)

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Research

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9 pages, 3118 KiB

Open AccessArticle

Tunable Electromechanical Coupling Coefficient of a Laterally Excited Bulk Wave Resonator with Composite Piezoelectric Film

by Ying Xie, Yan Liu, Jieyu Liu, Lei Wang, Wenjuan Liu, Bo Woon Soon, Yao Cai and Chengliang Sun

Micromachines 2022, 13(4), 641; https://doi.org/10.3390/mi13040641 - 18 Apr 2022

Cited by 5 | Viewed by 2150

Abstract

A resonator with an appropriate electromechanical coupling coefficient (

K_{t}^{2}

) is crucial for filter applications in radio communication. In this paper, we present an effective method to tune the

K_{t}^{2}

of resonators by introducing different materials into a [...] Read more.

A resonator with an appropriate electromechanical coupling coefficient (

K_{t}^{2}

) is crucial for filter applications in radio communication. In this paper, we present an effective method to tune the

K_{t}^{2}

of resonators by introducing different materials into a lithium niobate (LiNbO₃) piezoelectric matrix. The effective piezoelectric coefficients

e_{33}^{e f f}

and

e_{15}^{e f f}

of composite materials with four different introduced materials were calculated. The results show that the

e_{15}^{e f f}

of SiO₂/LiNbO₃ composite piezoelectric material was mostly sensitive to an increase in the width of introduced SiO₂ material. Simultaneously, the simulation of a laterally excited bulk wave resonator (XBAR) with SiO₂/LiNbO₃ composite material was also carried out to verify the change in the

K_{t}^{2}

originating from the variation in

e_{15}^{e f f}

. The achievable n79 filter using the SiO₂/LiNbO₃ composite material demonstrates the promising prospects of tuning

K_{t}^{2}

by introducing different materials into a LiNbO₃ piezoelectric matrix. Full article

(This article belongs to the Special Issue Recent Advances in RF MEMS)

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8 pages, 2670 KiB

Open AccessArticle

Influence of Etching Trench on

K_{e f f}^{2}

of Film Bulk Acoustic Resonator

by Chao Gao, Yang Zou, Jie Zhou, Yan Liu, Wenjuan Liu, Yao Cai and Chengliang Sun

Micromachines 2022, 13(1), 102; https://doi.org/10.3390/mi13010102 - 8 Jan 2022

Cited by 7 | Viewed by 2318

Abstract

As radio-frequency (RF) communication becomes more ubiquitous globally, film bulk acoustic resonators (FBAR) have attracted great attention for their superior performance. One of the key parameters of an FBAR, the effective electromechanical coupling coefficient (

K_{e f f}^{2}

), has a [...] Read more.

K_{e f f}^{2}

), has a great influence on the bandwidth of RF filters. In this work, we propose a feasible method to tune the

K_{e f f}^{2}

of the FBAR by etching the piezoelectric material to form a trench around the active area of the FBAR. The influence of the position of the etching trench on the

K_{e f f}^{2}

of the FBAR was investigated by 3D finite element modeling and experimental fabricating. Meanwhile, a theoretical electrical model was presented to test and verify the simulated and measured results. The

K_{e f f}^{2}

of the FBAR tended to be reduced when the distance between the edge of the top electrode and the edge of the trench was increased, but the Q value of the FBAR was not degraded. This work provides a new possibility for tuning the

K_{e f f}^{2}

of resonators to meet the requirements of different filter bandwidths. Full article

(This article belongs to the Special Issue Recent Advances in RF MEMS)

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11 pages, 34207 KiB

Open AccessArticle

Design and Optimization of the Dual-Mode Lamb Wave Resonator and Dual-Passband Filter

by Tiancheng Luo, Yan Liu, Yang Zou, Jie Zhou, Wenjuan Liu, Guoqiang Wu, Yao Cai and Chengliang Sun

Micromachines 2022, 13(1), 87; https://doi.org/10.3390/mi13010087 - 5 Jan 2022

Cited by 9 | Viewed by 2022

Abstract

Radio frequency (RF) filters with multiple passbands can meet the needs of miniaturization and integration for 5G communications. This paper reports a dual-mode Lamb wave resonator (DLWR) and a dual-passband filter based on DLWRs. The DLWR consists of a piezoelectric film and two interdigital electrode (IDT) arrays with different thicknesses, which leads to the coexistence of two main modes in the resonator. The resonance frequencies of the two modes can be adjusted separately by changing the thicknesses of the IDTs, which greatly satisfies the requirements of the dual-passband filter. Four DLWRs with different electrode configurations are designed, and the influences of the periodic length and thicknesses of the IDTs on the performance of the DLWR are studied. When the thickness of the piezoelectric layer is 0.75 μm and the two thicknesses of the IDTs are 0.1 μm and 0.3 μm, the resonance frequency of the second main mode is 1.27 GHz higher than the resonance frequency of the first main mode in the DLWR. Furthermore, a dual-passband filter based on the proposed DLWRs is demonstrated with an insertion loss less than 1 dB and a band rejection of about 15 dB. Moreover, two passbands at 2.45 GHz and 3.88 GHz with bandwidths of 66 MHz and 112 MHz, respectively, are achieved. The presented DLWR shows a potential application that can be used to obtain RF filters with adjustable dual passbands. Full article

(This article belongs to the Special Issue Recent Advances in RF MEMS)

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9 pages, 5634 KiB

Open AccessArticle

A Cascaded MEMS Amplitude Demodulator for Large Dynamic Range Application in RF Receiver

by Hao Yan, Xiaoping Liao, Chenglin Li and Chen Chen

Micromachines 2021, 12(12), 1515; https://doi.org/10.3390/mi12121515 - 5 Dec 2021

Cited by 3 | Viewed by 2319

Abstract

An amplitude demodulator with a large dynamic range, based on microelectromechanical systems (MEMS), is proposed in this paper. It is implemented as a cascade of a capacitive and a thermoelectric sensor. Two types of the transducer can improve the measurement range and enhance the overload capacity. This MEMS-based demodulation is realized by utilizing the square law relationship and the low-pass characteristic during the electromechanical and thermoelectric conversion. The fabrication of this device is compatible with the GaAs monolithic microwave integrated circuit (MMIC) process. Experiments show that this MEMS demodulator can realize the direct demodulation of an amplitude modulation (AM) signal with a carrier frequency of 0.35–10 GHz, and cover the power range from 0 to 23 dBm. This MEMS demodulator has the advantages of high power handling capability and zero DC power consumption. Full article

(This article belongs to the Special Issue Recent Advances in RF MEMS)

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Review

Jump to: Research

18 pages, 13628 KiB

Open AccessReview

Research in Nonlinearity of Surface Acoustic Wave Devices

by Yahui Tian, Litian Wang, Yuanyuan Wang, Yang Li, Haoxiang Wu, Lirong Qian, Honglang Li, Jinghui Wu and Ji Wang

Micromachines 2021, 12(12), 1454; https://doi.org/10.3390/mi12121454 - 26 Nov 2021

Cited by 8 | Viewed by 2353

Abstract

Surface acoustic wave (SAW) devices are one of the indispensable components in the radio frequency (RF) front-end of mobile phones. With the development of mobile communication technology, the requirements for linear specification of devices are more and more strict. Nonlinear distortions of SAW devices have a serious influence on the application of mobile RF modules. To satisfy the strict requirement of linearity of communication system, it is necessary to understand the generation mechanism of nonlinearity and study the accurate modeling, appropriate measurement methods, and nonlinear response elimination technology. In this paper, we summarize the research progress on the nonlinearity of SAW devices in recent years from four aspects: the generation mechanism, simulation methods, measurement system, and suppression technology. The nonlinear harmonics with the nonlinear Mason equivalent circuit model are simulated. Furthermore, harmonics and intermodulation signals of SAW filters are tested by the authors. Thanks to these research studies, it is of great significance to the development of future RF front-end modules with high linear SAW devices. Full article

(This article belongs to the Special Issue Recent Advances in RF MEMS)

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