ALD Technique for Functional Coatings of Nanostructured Materials

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanofabrication and Nanomanufacturing".

Deadline for manuscript submissions: closed (31 December 2021) | Viewed by 36623

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Physics Department, Faculty of Sciences, University of Oviedo, E-33007 Oviedo, Spain
Interests: magnetic nanowires and nanotubes; magneto-caloritronics; nanomagnetism
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Guest Editor
Physics Department, Faculty of Sciences, University of Oviedo, E-33007 Oviedo, Spain
Interests: nanoporous materials; electrochemical anodization and deposition techniques; self-assembly and self-ordered nanostructured materials; atomic layer deposition; magnetic nanowires and nanotubes; supercapacitors and energy storage devices; magneto-optical sensing and biosensing; electron microscopy and X-ray microanalysis
Special Issues, Collections and Topics in MDPI journals

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Guest Editor
Physics Department, Faculty of Sciences, University of Oviedo, E-33007 Oviedo, Spain
Interests: thermoelectric materials and devices; thermoelectric generators for waste heat recovery applications; micro-thermoelectric coolers for thermal management of photonic integrated circuits and biosensing; nanomagnetism and magnetic characterization of self-ordered nanowires and nanotubes arrays; magnetic and electrical transport properties of single nanostructures; design of mixed fabrication processes combining electrochemistry, photolithography and atomic layer deposition techniques
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The conformability and thickness control of thin layers achieved using the atomic layer deposition (ALD) technique have driven the development of new material structures as well as novel devices that are more efficient in many research fields such as magnetism, photonics or biochemistry, among others. The research is still focusing on the development of novel materials and their growth mechanisms, and designing new precursors and deposition approaches. Moreover, the implementation of such techniques in combination with existing technologies will give rise to new downsized devices with better performance. In addition, the ALD process is required in many research areas such as the surface protection of nanostructures, allowing their manipulation and characterization to advance in fundamental research and quantum phenomena investigations.

This Special Issue is focused on, but not confined to, three main research levels involving the ALD technique.

  • The development of new precursors and deposition approaches to increase the state of the art of ALD materials.
  • Implementation of ALD in combination with other fabrication routes to yield new nanostructured materials.
  • Fabrication of advance devices using the ALD technique to improve their performance.

 

Prof. Victor M. Prida
Dr. Víctor Vega Martínez
Dr. Javier García Fernández
Guest Editors

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Keywords

  • Atomic layer deposition;
  • Functional coatings (biocompatible, hydrophilic or hydrophobic materials, photocatalytic, optical, photoluminiscent, corrosion-resistant, etc.);
  • Nanomaterials;
  • Surface layer modification;
  • Energy storage supercapacitors

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Published Papers (10 papers)

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Editorial

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3 pages, 221 KiB  
Editorial
Special Issue “ALD Technique for Functional Coatings of Nanostructured Materials”
by Javier Garcia Fernández, Victor Vega Martínez and Victor Manuel de la Prida Pidal
Nanomaterials 2022, 12(19), 3489; https://doi.org/10.3390/nano12193489 - 5 Oct 2022
Viewed by 1327
Abstract
Atomic layer deposition (ALD) is a vapor-phase technique that consists of the alternation of separated self-limiting surface reactions, which enable film thickness to be accurately controlled at the angstrom level, based on the former atomic layer epitaxy method [...] Full article
(This article belongs to the Special Issue ALD Technique for Functional Coatings of Nanostructured Materials)

Research

Jump to: Editorial

14 pages, 4373 KiB  
Communication
Stearic Acid as an Atomic Layer Deposition Inhibitor: Spectroscopic Insights from AFM-IR
by Saumya Satyarthy, Md Hasan Ul Iqbal, Fairoz Abida, Ridwan Nahar, Adam J. Hauser, Mark Ming-Cheng Cheng and Ayanjeet Ghosh
Nanomaterials 2023, 13(19), 2713; https://doi.org/10.3390/nano13192713 - 6 Oct 2023
Cited by 1 | Viewed by 1908
Abstract
Modern-day chip manufacturing requires precision in placing chip materials on complex and patterned structures. Area-selective atomic layer deposition (AS-ALD) is a self-aligned manufacturing technique with high precision and control, which offers cost effectiveness compared to the traditional patterning techniques. Self-assembled monolayers (SAMs) have [...] Read more.
Modern-day chip manufacturing requires precision in placing chip materials on complex and patterned structures. Area-selective atomic layer deposition (AS-ALD) is a self-aligned manufacturing technique with high precision and control, which offers cost effectiveness compared to the traditional patterning techniques. Self-assembled monolayers (SAMs) have been explored as an avenue for realizing AS-ALD, wherein surface-active sites are modified in a specific pattern via SAMs that are inert to metal deposition, enabling ALD nucleation on the substrate selectively. However, key limitations have limited the potential of AS-ALD as a patterning method. The choice of molecules for ALD blocking SAMs is sparse; furthermore, deficiency in the proper understanding of the SAM chemistry and its changes upon metal layer deposition further adds to the challenges. In this work, we have addressed the above challenges by using nanoscale infrared spectroscopy to investigate the potential of stearic acid (SA) as an ALD inhibiting SAM. We show that SA monolayers on Co and Cu substrates can inhibit ZnO ALD growth on par with other commonly used SAMs, which demonstrates its viability towards AS-ALD. We complement these measurements with AFM-IR, which is a surface-sensitive spatially resolved technique, to obtain spectral insights into the ALD-treated SAMs. The significant insight obtained from AFM-IR is that SA SAMs do not desorb or degrade with ALD, but rather undergo a change in substrate coordination modes, which can affect ALD growth on substrates. Full article
(This article belongs to the Special Issue ALD Technique for Functional Coatings of Nanostructured Materials)
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10 pages, 4731 KiB  
Communication
Comparative Study of Thermal and Plasma-Enhanced Atomic Layer Deposition of Iron Oxide Using Bis(N,N′-di-butylacetamidinato)iron(II)
by Boyun Choi, Gun-Woo Park, Jong-Ryul Jeong and Nari Jeon
Nanomaterials 2023, 13(12), 1858; https://doi.org/10.3390/nano13121858 - 14 Jun 2023
Cited by 2 | Viewed by 1813
Abstract
Only a few iron precursors that can be used in the atomic layer deposition (ALD) of iron oxides have been examined thus far. This study aimed to compare the various properties of FeOx thin films deposited using thermal ALD and plasma-enhanced ALD [...] Read more.
Only a few iron precursors that can be used in the atomic layer deposition (ALD) of iron oxides have been examined thus far. This study aimed to compare the various properties of FeOx thin films deposited using thermal ALD and plasma-enhanced ALD (PEALD) and to evaluate the advantages and disadvantages of using bis(N,N′-di-butylacetamidinato)iron(II) as an Fe precursor in FeOx ALD. The PEALD of FeOx films using iron bisamidinate has not yet been reported. Compared with thermal ALD films, PEALD films exhibited improved properties in terms of surface roughness, film density, and crystallinity after they were annealed in air at 500 °C. The annealed films, which had thicknesses exceeding ~ 9 nm, exhibited hematite crystal structures. Additionally, the conformality of the ALD-grown films was examined using trench-structured wafers with different aspect ratios. Full article
(This article belongs to the Special Issue ALD Technique for Functional Coatings of Nanostructured Materials)
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26 pages, 1362 KiB  
Article
Recent Progress of Atomic Layer Technology in Spintronics: Mechanism, Materials and Prospects
by Yuanlu Tsai, Zhiteng Li and Shaojie Hu
Nanomaterials 2022, 12(4), 661; https://doi.org/10.3390/nano12040661 - 16 Feb 2022
Cited by 13 | Viewed by 4928
Abstract
The atomic layer technique is generating a lot of excitement and study due to its profound physics and enormous potential in device fabrication. This article reviews current developments in atomic layer technology for spintronics, including atomic layer deposition (ALD) and atomic layer etching [...] Read more.
The atomic layer technique is generating a lot of excitement and study due to its profound physics and enormous potential in device fabrication. This article reviews current developments in atomic layer technology for spintronics, including atomic layer deposition (ALD) and atomic layer etching (ALE). To begin, we introduce the main atomic layer deposition techniques. Then, in a brief review, we discuss ALE technology for insulators, semiconductors, metals, and newly created two-dimensional van der Waals materials. Additionally, we compare the critical factors learned from ALD to constructing ALE technology. Finally, we discuss the future prospects and challenges of atomic layer technology in the field of spinronics. Full article
(This article belongs to the Special Issue ALD Technique for Functional Coatings of Nanostructured Materials)
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12 pages, 17474 KiB  
Article
Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers
by Xiao-Ying Zhang, Yue Yang, Zhi-Xuan Zhang, Xin-Peng Geng, Chia-Hsun Hsu, Wan-Yu Wu, Shui-Yang Lien and Wen-Zhang Zhu
Nanomaterials 2021, 11(5), 1173; https://doi.org/10.3390/nano11051173 - 29 Apr 2021
Cited by 11 | Viewed by 4089
Abstract
In this study, silicon oxide (SiO2) films were deposited by remote plasma atomic layer deposition with Bis(diethylamino)silane (BDEAS) and an oxygen/argon mixture as the precursors. Oxygen plasma powers play a key role in the quality of SiO2 films. Post-annealing was [...] Read more.
In this study, silicon oxide (SiO2) films were deposited by remote plasma atomic layer deposition with Bis(diethylamino)silane (BDEAS) and an oxygen/argon mixture as the precursors. Oxygen plasma powers play a key role in the quality of SiO2 films. Post-annealing was performed in the air at different temperatures for 1 h. The effects of oxygen plasma powers from 1000 W to 3000 W on the properties of the SiO2 thin films were investigated. The experimental results demonstrated that the SiO2 thin film growth per cycle was greatly affected by the O2 plasma power. Atomic force microscope (AFM) and conductive AFM tests show that the surface of the SiO2 thin films, with different O2 plasma powers, is relatively smooth and the films all present favorable insulation properties. The water contact angle (WCA) of the SiO2 thin film deposited at the power of 1500 W is higher than that of other WCAs of SiO2 films deposited at other plasma powers, indicating that it is less hydrophilic. This phenomenon is more likely to be associated with a smaller bonding energy, which is consistent with the result obtained by Fourier transformation infrared spectroscopy. In addition, the influence of post-annealing temperature on the quality of the SiO2 thin films was also investigated. As the annealing temperature increases, the SiO2 thin film becomes denser, leading to a higher refractive index and a lower etch rate. Full article
(This article belongs to the Special Issue ALD Technique for Functional Coatings of Nanostructured Materials)
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20 pages, 3772 KiB  
Article
Functional Antimicrobial Surface Coatings Deposited onto Nanostructured 316L Food-Grade Stainless Steel
by A. Silvia González, Angela Riego, Victor Vega, Javier García, Serena Galié, Ignacio Gutiérrez del Río, Maria del Valle Martínez de Yuso, Claudio Jesús Villar, Felipe Lombó and Victor Manuel De la Prida
Nanomaterials 2021, 11(4), 1055; https://doi.org/10.3390/nano11041055 - 20 Apr 2021
Cited by 10 | Viewed by 3393
Abstract
In our study, we demonstrated the performance of antimicrobial coatings on properly functionalized and nanostructured 316L food-grade stainless steel pipelines. For the fabrication of these functional coatings, we employed facile and low-cost electrochemical techniques and surface modification processes. The development of a nanoporous [...] Read more.
In our study, we demonstrated the performance of antimicrobial coatings on properly functionalized and nanostructured 316L food-grade stainless steel pipelines. For the fabrication of these functional coatings, we employed facile and low-cost electrochemical techniques and surface modification processes. The development of a nanoporous structure on the 316L stainless steel surface was performed by following an electropolishing process in an electrolytic bath, at a constant anodic voltage of 40 V for 10 min, while the temperature was maintained between 0 and 10 °C. Subsequently, we incorporated on this nanostructure additional coatings with antimicrobial and bactericide properties, such as Ag nanoparticles, Ag films, or TiO2 thin layers. These functional coatings were grown on the nanostructured substrate by following electroless process, electrochemical deposition, and atomic layer deposition (ALD) techniques. Then, we analyzed the antimicrobial efficiency of these functionalized materials against different biofilms types (Candida parapsilosis, Escherichia coli, Pseudomonas aeruginosa, Staphylococcus aureus, and Staphylococcus epidermidis). The results of the present study demonstrate that the nanostructuring and surface functionalization processes constitute a promising route to fabricate novel functional materials exhibiting highly efficient antimicrobial features. In fact, we have shown that our use of an appropriated association of TiO2 layer and Ag nanoparticle coatings over the nanostructured 316L stainless steel exhibited an excellent antimicrobial behavior for all biofilms examined. Full article
(This article belongs to the Special Issue ALD Technique for Functional Coatings of Nanostructured Materials)
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16 pages, 4433 KiB  
Article
Influence of Alumina Addition on the Optical Properties and the Thermal Stability of Titania Thin Films and Inverse Opals Produced by Atomic Layer Deposition
by Martin Waleczek, Jolien Dendooven, Pavel Dyachenko, Alexander Y. Petrov, Manfred Eich, Robert H. Blick, Christophe Detavernier, Kornelius Nielsch, Kaline P. Furlan and Robert Zierold
Nanomaterials 2021, 11(4), 1053; https://doi.org/10.3390/nano11041053 - 20 Apr 2021
Cited by 12 | Viewed by 3703
Abstract
TiO2 thin films deposited by atomic layer deposition (ALD) at low temperatures (<100 °C) are, in general, amorphous and exhibit a smaller refractive index in comparison to their crystalline counterparts. Nonetheless, low-temperature ALD is needed when the substrates or templates are based [...] Read more.
TiO2 thin films deposited by atomic layer deposition (ALD) at low temperatures (<100 °C) are, in general, amorphous and exhibit a smaller refractive index in comparison to their crystalline counterparts. Nonetheless, low-temperature ALD is needed when the substrates or templates are based on polymeric materials, as the deposition has to be performed below their glass transition or melting temperatures. This is the case for photonic crystals generated via ALD infiltration of self-assembled polystyrene templates. When heated up, crystal phase transformations take place in the thin films or photonic structures, and the accompanying volume reduction as well as the burn-out of residual impurities can lead to mechanical instability. The introduction of cation doping (e.g., Al or Nb) in bulk TiO2 parts is known to alter phase transitions and to stabilize crystalline phases. In this work, we have developed low-temperature ALD super-cycles to introduce Al2O3 into TiO2 thin films and photonic crystals. The aluminum oxide content was adjusted by varying the TiO2:Al2O3 internal loop ratio within the ALD super-cycle. Both thin films and inverse opal photonic crystal structures were subjected to thermal treatments ranging from 200 to 1200 °C and were characterized by in- and ex-situ X-ray diffraction, spectroscopic ellipsometry, and spectroscopic reflectance measurements. The results show that the introduction of alumina affects the crystallization and phase transition temperatures of titania as well as the optical properties of the inverse opal photonic crystals (iPhC). The thermal stability of the titania iPhCs was increased by the alumina introduction, maintaining their photonic bandgap even after heat treatment at 900 °C and outperforming the pure titania, with the best results being achieved with the super-cycles corresponding to an estimated alumina content of 26 wt.%. Full article
(This article belongs to the Special Issue ALD Technique for Functional Coatings of Nanostructured Materials)
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16 pages, 5038 KiB  
Article
High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures
by Aaron J. Austin, Elena Echeverria, Phadindra Wagle, Punya Mainali, Derek Meyers, Ashish Kumar Gupta, Ritesh Sachan, S. Prassana and David N. McIlroy
Nanomaterials 2020, 10(12), 2434; https://doi.org/10.3390/nano10122434 - 5 Dec 2020
Cited by 13 | Viewed by 5308
Abstract
Silica nanosprings (NS) were coated with gallium nitride (GaN) by high-temperature atomic layer deposition. The deposition temperature was 800 °C using trimethylgallium (TMG) as the Ga source and ammonia (NH3) as the reactive nitrogen source. The growth of GaN on silica [...] Read more.
Silica nanosprings (NS) were coated with gallium nitride (GaN) by high-temperature atomic layer deposition. The deposition temperature was 800 °C using trimethylgallium (TMG) as the Ga source and ammonia (NH3) as the reactive nitrogen source. The growth of GaN on silica nanosprings was compared with deposition of GaN thin films to elucidate the growth properties. The effects of buffer layers of aluminum nitride (AlN) and aluminum oxide (Al2O3) on the stoichiometry, chemical bonding, and morphology of GaN thin films were determined with X-ray photoelectron spectroscopy (XPS), high-resolution x-ray diffraction (HRXRD), and atomic force microscopy (AFM). Scanning and transmission electron microscopy of coated silica nanosprings were compared with corresponding data for the GaN thin films. As grown, GaN on NS is conformal and amorphous. Upon introducing buffer layers of Al2O3 or AlN or combinations thereof, GaN is nanocrystalline with an average crystallite size of 11.5 ± 0.5 nm. The electrical properties of the GaN coated NS depends on whether or not a buffer layer is present and the choice of the buffer layer. In addition, the IV curves of GaN coated NS and the thin films (TF) with corresponding buffer layers, or lack thereof, show similar characteristic features, which supports the conclusion that atomic layer deposition (ALD) of GaN thin films with and without buffer layers translates to 1D nanostructures. Full article
(This article belongs to the Special Issue ALD Technique for Functional Coatings of Nanostructured Materials)
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14 pages, 5293 KiB  
Article
Antimicrobial Bilayer Nanocomposites Based on the Incorporation of As-Synthetized Hollow Zinc Oxide Nanotubes
by Carol López de Dicastillo, Cristian Patiño Vidal, Irene Falcó, Gloria Sánchez, Paulina Márquez and Juan Escrig
Nanomaterials 2020, 10(3), 503; https://doi.org/10.3390/nano10030503 - 11 Mar 2020
Cited by 25 | Viewed by 5003
Abstract
An antimicrobial polymeric bilayer structure based on the application of an acrylic coating containing hollow zinc oxide nanotubes over a polymeric substrate was developed in this work. Firstly, zinc oxide nanotubes (ZnONT) were obtained by an atomic layer deposition (ALD) process [...] Read more.
An antimicrobial polymeric bilayer structure based on the application of an acrylic coating containing hollow zinc oxide nanotubes over a polymeric substrate was developed in this work. Firstly, zinc oxide nanotubes (ZnONT) were obtained by an atomic layer deposition (ALD) process over electrospun polyvinyl alcohol nanofibers followed by polymer removal through calcination with the purpose of obtaining antimicrobial nanostructures with a high specific area. Parameters of electrospinning, ALD, and calcination processes were set in order to obtain successfully hollow zinc oxide nanotubes. Morphological studies through scanning electron microscopy (SEM) and transmission electron microscopy (TEM) microscopies confirmed the morphological structure of ZnONT with an average diameter of 180 nm and thickness of approximately 60 nm. Thermal and X-ray diffraction (XRD) analyses provided evidence that calcination completely removed the polymer, resulting in a crystalline hexagonal wurtzite structure. Subsequently, ZnONT were incorporated into a polymeric coating over a polyethylene extruded film at two concentrations: 0.5 and 1 wt. % with respect to the polymer weight. An antimicrobial analysis of developed antimicrobial materials was performed following JIS Z2801 against Staphylococcus aureus and Escherichia coli. When compared to active materials containing commercial ZnO nanoparticles, materials containing ZnONT presented higher microbial inhibition principally against Gram-negative bacteria, whose reduction was total for films containing 1 wt. % ZnONT. Antiviral studies were also performed, but these materials did not present significant viral reduction. Full article
(This article belongs to the Special Issue ALD Technique for Functional Coatings of Nanostructured Materials)
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10 pages, 6122 KiB  
Communication
Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
by Seokjung Yun, Sang-Joon Kim, Jaesung Youn, Hoon Kim, Jeongjae Ryu, Changdeuck Bae, Kwangsoo No and Seungbum Hong
Nanomaterials 2020, 10(3), 409; https://doi.org/10.3390/nano10030409 - 26 Feb 2020
Cited by 4 | Viewed by 3692
Abstract
Nanostructured electrodes and their flexible integrated systems have great potential for many applications, including electrochemical energy storage, electrocatalysis and solid-state memory devices, given their ability to improve faradaic reaction sites by large surface area. Although many processing techniques have been employed to fabricate [...] Read more.
Nanostructured electrodes and their flexible integrated systems have great potential for many applications, including electrochemical energy storage, electrocatalysis and solid-state memory devices, given their ability to improve faradaic reaction sites by large surface area. Although many processing techniques have been employed to fabricate nanostructured electrodes onto flexible substrates, these present limitations in terms of achieving flexible electrodes with high mechanical stability. In this study, the adhesion, mechanical properties and flexibility of TiN nanotube arrays on a Pt substrate were improved using a Ti interlayer. Highly ordered and well-aligned TiN nanotube arrays were fabricated on a Pt substrate using a template-assisted method with an anodic aluminum oxide (AAO) template and atomic layer deposition (ALD) system. We show that with the use of a Ti interlayer between the TiN nanotube arrays and Pt substrate, the TiN nanotube arrays could perfectly attach to the Pt substrate without delamination and faceted phenomena. Furthermore, the I-V curve measurements confirmed that the electric contact between the TiN nanotube arrays and substrate for use as an electrode was excellent, and its flexibility was also good for use in flexible electronic devices. Future efforts will be directed toward the fabrication of embedded electrodes in flexible plastic substrates by employing the concepts demonstrated in this study. Full article
(This article belongs to the Special Issue ALD Technique for Functional Coatings of Nanostructured Materials)
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