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Optoelectronic Functional Devices for Sensing Applications

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Optical Sensors".

Deadline for manuscript submissions: 31 January 2025 | Viewed by 345

Special Issue Editor


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Guest Editor
School of Flexible Electronics, Sun Yat-Sen University, Shenzhen, China
Interests: ideal interfaces for high-performance optoelectronic devices; field-effect transistors (FETs); neuromorphic devices and computing, neural sensing, and brain–machine interfaces; in situ TEM-device-based analysis of novel physical phenomena such as phase transitions and thermal transport at the microscale of rich structures; phase transition control and the construction of information devices; emerging optoelectronic materials for spintronics

Special Issue Information

Dear Colleagues,

Emerging optoelectronic materials and devices utilize the unique properties of novel emerging materials to design and fabricate much more powerful optoelectronic devices. Emerging optoelectronic materials possess distinctive physical and chemical properties, such as two-dimensional materials with atomic-scale thickness and rich quantum effects and perovskite materials with outstanding optoelectronic conversion efficiency. These properties endow the emerging optoelectronic materials with vast potential applications, including transistors, logic gates, neuromorphic devices, solar cells, photodetectors, and light-emitting diodes.

Currently, with continuous advancements in preparation techniques, emerging optoelectronic materials are spring up, offering new possibilities for the development of optoelectronic devices, including enhancing device performance, multifunctionality, flexibility, and wearability. These trends enable optoelectronic devices to better adapt to complex application environments, broadening their applications range and importance in terms of scientific implications, developmental trends, and overall value.

This Special Issue will cover, but is not limited to, preparation methods and property characterizations of emerging optoelectronic materials, as well as the fabrication of optoelectronic devices for information processing, sensing, logic, neuromorphic, computing, and detecting.

Dr. Laiyuan Wang
Guest Editor

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Keywords

  • emerging semiconductor
  • 2D material
  • perovskite
  • functional molecule
  • transistor
  • sensor
  • photodetector
  • neuromorphic device
  • flexible device
  • quantum information device
  • photonics and optics

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Published Papers (1 paper)

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Research

20 pages, 5507 KiB  
Article
Robust Pixel Design Methodologies for a Vertical Avalanche Photodiode (VAPD)-Based CMOS Image Sensor
by Akito Inoue, Naoki Torazawa, Shota Yamada, Yuki Sugiura, Motonori Ishii, Yusuke Sakata, Taiki Kunikyo, Masaki Tamaru, Shigetaka Kasuga, Yusuke Yuasa, Hiromu Kitajima, Hiroshi Koshida, Tatsuya Kabe, Manabu Usuda, Masato Takemoto, Yugo Nose, Toru Okino, Takashi Shirono, Kentaro Nakanishi, Yutaka Hirose, Shinzo Koyama, Mitsuyoshi Mori, Masayuki Sawada, Akihiro Odagawa and Tsuyoshi Tanakaadd Show full author list remove Hide full author list
Sensors 2024, 24(16), 5414; https://doi.org/10.3390/s24165414 (registering DOI) - 21 Aug 2024
Viewed by 258
Abstract
We present robust pixel design methodologies for a vertical avalanche photodiode-based CMOS image sensor, taking account of three critical practical factors: (i) “guard-ring-free” pixel isolation layout, (ii) device characteristics “insensitive” to applied voltage and temperature, and (iii) stable operation subject to intense light [...] Read more.
We present robust pixel design methodologies for a vertical avalanche photodiode-based CMOS image sensor, taking account of three critical practical factors: (i) “guard-ring-free” pixel isolation layout, (ii) device characteristics “insensitive” to applied voltage and temperature, and (iii) stable operation subject to intense light exposure. The “guard-ring-free” pixel design is established by resolving the tradeoff relationship between electric field concentration and pixel isolation. The effectiveness of the optimization strategy is validated both by simulation and experiment. To realize insensitivity to voltage and temperature variations, a global feedback resistor is shown to effectively suppress variations in device characteristics such as photon detection efficiency and dark count rate. An in-pixel overflow transistor is also introduced to enhance the resistance to strong illumination. The robustness of the fabricated VAPD-CIS is verified by characterization of 122 different chips and through a high-temperature and intense-light-illumination operation test with 5 chips, conducted at 125 °C for 1000 h subject to 940 nm light exposure equivalent to 10 kLux. Full article
(This article belongs to the Special Issue Optoelectronic Functional Devices for Sensing Applications)
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