Advanced Field-Effect Sensors: Volume II
A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Physical Sensors".
Deadline for manuscript submissions: closed (20 August 2023) | Viewed by 5854
Special Issue Editor
Interests: optical and electrical properties of nanostructured materials such as carbon nanotubes, graphene, and 2D materials; van der Waals heterostructures and Schottky junctions; field-effect transistors; non-volatile memories; solar cells; photodetectors; field emission devices
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Special Issue Information
Dear Colleagues,
Sensor devices based on the field-effect principle have been used for more than fifty years in a variety of applications, ranging from bio-chemical sensing to radiation detection or environmental parameter monitoring. The basic working principle of field-effect sensors is the same as that of field-effect transistors (FETs), in which the conductance between two electrodes (source and drain) is controlled by the electric field generated by a gate.
Field-effect biochemical sensors have found increasing applications for pH and molecular or DNA sensing since the proposal of the ion-sensitive field-effect transistor (ISFET) by Bergerveld in 1968.
Field-effect devices have been extensively exploited for gas and pressure sensing. Photo-FETs are popular light intensity sensors. FETs, both the junction (JFET) and metal–oxide–semiconductor (MOSFET) type, are widely used as photodetectors and ionizing radiation detectors or dosimeters in radioprotection, radiotherapy, medicine, and dentistry.
FETs enable the production of sensitive temperature sensors and piezoelectric strain gauges.
The advent of nanostructured materials in the past three decades has created opportunities to integrate new sensing materials or develop innovative architectures in field-effect-based sensors. The optimization of existing devices, research on new field-effect structures and fabrication techniques, and the design of novel electronic systems for signal amplification and processing are currently underway.
A great advantage of field-effect sensors is that they provide intrinsic signal amplification and can be integrated with the electronics needed for the sensor signal processing on the same semiconductor chip. Moreover, field-effect sensors feature high sensitivity, low cost, and miniaturization.
Field-effect-based sensing offers several challenges that stem from the highly interdisciplinary nature of the problems encountered, in which knowledge of material science, surface chemistry and physics, biomolecular kinetics, electronic engineering, etc. are required.
This Special Issue will present the recent progress in the fabrication, design, understanding, and utilization of field-effect sensors for any applications.
The Special Issue will collect research papers that report novel experimental, theoretical, or simulation results that deal with field-effect sensors. Review articles that offer comprehensive coverage of specific aspects or new insights and perspectives are welcome.
Prof. Dr. Antonio Di Bartolomeo
Guest Editor
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