Search Results (29)

In their simplest form, bulk acoustic wave (BAW) devices consist of a piezoelectric crystal between two electrodes that transduce the material’s vibrations into electrical signals. They are adopted in frequency control and metrology, with well-established standards at frequencies of 5 MHz and above. Their use as a resonant-mass strain antenna for high-frequency gravitational waves has been recently proposed (Goryachev and Tobar, 2014). The estimated power spectral density sensitivity at the resonant frequencies is of the order of ${10}^{-21}\mathrm{strain}/\sqrt{\mathrm{Hz}}$. In this paper, after introducing the science opportunity and potential of gravitational wave detection with BAWs, we describe the two-stage BAUSCIA project plan to build a multimode antenna based on commercial BAWs, followed by an optimized array of custom BAWs. We show that commercially available BAWs already provide sensitivity comparable to current experiments around 10 MHz. Finally, we outline options for optimization of custom devices to improve sensitivity in an unexplored region, probe multiple frequencies between 0.1 and 10 MHz, and target specific signals, such as post-merger emission from neutron stars or emission from various dark matter candidates. Full article

For relaxor ferroelectric single crystal (1 − x)Pb(Mg_1/3Nb_2/3)O₃ − xPbTiO₃ (PMN-PT), through reasonable component regulation and electric field polarization, an orthogonal mm² point group structure can be obtained, which has high piezoelectric constants and is, therefore, a desired substrate material for lateral-field-excited (LFE) bulk acoustic wave (BAW) devices. In this work, acoustic wave resonance characteristics of (zxt) 45° PMN-PT BAW devices with LFE are investigated. Firstly, Mindlin first-order plate theory is used to obtain vibration governing equations of orthorhombic crystals excited by a lateral electric field. By analyzing the electrically forced vibrations of the finite plate, the basic vibration characteristics, such as motional capacitance, resonant frequency, and mode shape are obtained, and influences of different electrode parameters on resonance characteristics of the device are investigated. In addition, the effects of the structure parameters on the mass sensitivity of the devices are analyzed and further verified by FEM simulations. The model presented in this study can be conveniently used to optimize the structural parameters of LFE bulk acoustic wave devices based on orthorhombic crystals, which is crucial to obtain good resonance characteristics. The results provide an important basis for the design of LFE bulk acoustic wave resonators and sensors by using PMN-PT orthorhombic crystals. Full article

Bulk Acoustic Wave (BAW) resonators are essential components in modern RF communication systems due to their high selectivity and quality factor. However, spurious resonances caused by Lamb wave mode propagation along the in-plane directions degrade the filter performance. Traditional Finite Element Method (FEM) simulations provide accurate modeling but are computationally expensive, especially for arbitrarily shaped resonators and solidly mounted resonators (SMRs), whose stack of materials is composed of many thin layers of different materials. To address this, we extend a previously published model (named the Quasi-3D model), which employs the Transmission Line Matrix (TLM) method, enabling efficient simulations of complex geometries with more precise meshing. The new approach allows us to simulate different geometries, and we will show several apodized geometries with the aim of minimizing the lateral modes. In addition, the proposed approach significantly reduces the computational cost while maintaining high accuracy, as validated by FEM comparisons and experimental measurements. Full article

AlN-based bulk acoustic wave (BAW) filters have emerged as crucial components in 5G communication due to their high frequency, wide bandwidth, high power capacity, and compact size. This paper mainly reviews the basic principles and recent research advances of AlN-based BAW resonators, which are the backbone of BAW filters. We begin by summarizing the epitaxial growth of single-crystal, polycrystalline, and doped AlN films, with a focus on single-crystal AlN and ScAlN, which are currently the most popular. The discussion then extends to the structure and fabrication of BAW resonators, including the basic solidly mounted resonator (SMR) and the film bulk acoustic resonator (FBAR). The new Xtended Bulk Acoustic Wave (XBAW) technology is highlighted as an effective method to enhance filter bandwidth. Hybrid SAW/BAW resonators (HSBRs) combine the benefits of BAW and SAW resonators to significantly reduce temperature drift. The paper further explores the application of BAW resonators in ladder and lattice BAW filters, highlighting advancements in their design improvements. The frequency-reconfigurable BAW filter, which broadens the filter’s application range, has garnered substantial attention from researchers. Additionally, optimization algorithms for designing AlN-based BAW filters are outlined to reduce design time and improve efficiency. This work aims to serve as a reference for future research on AlN-based BAW filters and to provide insight for similar device studies. Full article

Magnetoelectric (ME) devices combining piezoelectric and magnetostrictive materials have emerged as powerful tools to miniaturize and enhance sensing and communication technologies. This paper examines recent developments in bulk acoustic wave (BAW) and surface acoustic wave (SAW) ME devices, which demonstrate unique capabilities in ultra-sensitive magnetic sensing, compact antennas, and quantum applications. Leveraging the mechanical resonance of BAW and SAW modes, ME sensors achieve the femto- to pico-Tesla sensitivity ideal for biomedical applications, while ME antennas, operating at acoustic resonance, allow significant size reduction, with high radiation gain and efficiency, which is suited for bandwidth-restricted applications. In addition, ME non-reciprocal magnetoacoustic devices using hybrid magnetoacoustic waves present novel solutions for RF isolation, which have also shown potential for the efficient control of quantum defects, such as negatively charged nitrogen-vacancy (NV⁻) centers. Continued advancements in materials and device structures are expected to further enhance ME device performance, positioning them as key components in future bio-sensing, wireless communication, and quantum information technologies. Full article

This paper reports on a gas sensor based on two bulk acoustic wave (BAW) resonators electrically coupled with a tuneable capacitor. The weak coupling strength was tuned to its optimal value (achieving maximum sensitivity) by varying the capacitance (without complex filtering, a control circuit as required in the state of the art). A gas sensor was developed based on the electrically coupled BAW resonators by functionalizing one of the resonators with zeolitic imidazolate framework-8 (ZIF-8). It featured a quality (Q) factor of ~2.2 k in air and a resonance frequency of ~6.32 MHz. Such a simple coupling mechanism can be tuned and further extended to coupled resonators in other domains. Full article

Lateral flow membrane microdevices are widely used for chromatographic separation processes and diagnostics. The separation performance of microfluidic lateral membrane devices is determined by mass transfer limitations in the membrane, and in the liquid phase, mass transfer resistance is dependent on the channel dimensions and transport properties of the species separated by the membrane. We present a novel approach based on an active bulk acoustic wave (BAW) mixing method to enhance lateral transport in micromachined silicon devices. BAWs have been previously applied in channels for mixing and trapping cells and particles in single channels, but this is, to the best of our knowledge, the first instance of their application in membrane devices. Our findings demonstrate that optimal resonance is achieved with minimal influence of the pore configuration on the average lateral flow. This has practical implications for the design of microfluidic devices, as the channels connected through porous walls under the acoustic streaming act as 760 µm-wide channels rather than two 375 µm-wide channels in the context of matching the standing pressure wave criteria of the piezoelectric transducer. However, the roughness of the microchannel walls does seem to play a significant role in mixing. A roughened (black silicon) wall results in a threefold increase in average streaming flow in BAW mode, suggesting potential avenues for further optimization. Full article

With the development of communications technology, surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices have become hotspots of the competitive research in the frequency band above GHz. It imposes higher requirements on the operating frequency, temperature coefficient of frequency (TCF), and electromechanical coupling coefficient (k²) of SAW devices. In this work, we reported on a novel ZnO/SiO₂/diamond-layered resonator structure and systematically investigated its propagation characteristics by using finite element methods. A comparative study and analysis of k² and acoustic velocity (v_p) for both the excited Rayleigh mode and the Sezawa mode were conducted. By selecting the appropriate ZnO piezoelectric film, SiO₂, and electrode thickness, the Sezawa mode was chosen as the main mode, effectively improving both k² and v_p. It was observed that the k² of the Sezawa mode is 7.5 times that of the excited Rayleigh mode and nearly 5 times that of piezoelectric single-crystal ZnO; v_p is 1.7 times that of the excited Rayleigh mode and nearly 1.5 times that of piezoelectric single-crystal ZnO. Furthermore, the proposed multilayer structure achieves a TCF close to 0 while maintaining a substantial k². In practical applications, increasing the thickness of SiO₂ can compensate for the device’s TCF reduction caused by the interdigital transducer (IDT). Finally, this study explored the impact of increasing the aperture width and IDT pairs on the performance of the single-port resonator, revealing the changing patterns of quality factor (Q) values. The results reported here show that the structure has great promise for the fabrication of high-frequency and low-TCF SAW devices. Full article

Lateral modes are responsible for the in-band spurious resonances that appear on BAW resonators, degrading the in-band filter response. In this work, a fast computational method based on the transmission line matrix (TLM) method is employed to model the lateral resonances of BAW resonators. Using the precomputed dispersion curves of Lamb waves and an equivalent characteristic impedance for the TE₁ mode, a network of transmission lines is used to calculate the magnitude of field distributions on the electrodes. These characteristics are specific to the stack layer configuration. The model’s implementation is based on nodal Y matrices, from which particle displacement profiles are coupled to the electric domain via piezoelectric constitutive relations. Consequently, the input impedance of the resonator is obtained. The model exhibits strong agreement with FEM simulations of FBARs and SMRs, and with measurements of several SMRs. The proposed model can provide accurate predictions of resonator input impedance, which is around 200 times faster than conventional FEM. Full article

Despite the dominance of bulk acoustic wave (BAW) filters in the high-frequency market due to their superior performance and compatible integration process, the advent of the 5G era brings up new challenges to meet the ever-growing demands on high-frequency and large bandwidth. Al_1-xSc_xN piezoelectric films with high Sc concentration are particularly desirable to achieve an increased electromechanical coupling (K_t²) for BAW resonators and also a larger bandwidth for filters. In this paper, we designed and fabricated the Al_1-xSc_xN-based BAW resonators with Sc concentrations as high as 30%. The symmetry of the resonance region, border frame structure and thickness ratio of the piezoelectric stack are thoroughly examined for lateral modes suppression and resonant performance optimization. Benefiting from the 30% Sc doping, the fabricated BAW resonators demonstrate a large effective electromechanical coupling (K_eff²) of 17.8% at 4.75 GHz parallel resonant frequency. Moreover, the temperature coefficient of frequency (TCF) of the device is obtained as −22.9 ppm/°C, indicating reasonable temperature stability. Our results show that BAW resonators based on highly doped Al_1-xSc_xN piezoelectric film have great potential for high-frequency and large bandwidth applications. Full article

Near-field passive wireless sensors can realize non-contact strain measurement, so these sensors have extensive applications in structural health monitoring. However, these sensors suffer from low stability and short wireless sensing distance. This paper presents a bulk acoustic wave (BAW) passive wireless strain sensor, which consists of two coils and a BAW sensor. The force-sensitive element is a quartz wafer with a high quality factor, which is embedded into the sensor housing, so the sensor can convert the strain of the measured surface into the shift of resonant frequency. A double-mass-spring-damper model is developed to analyze the interaction between the quartz and the sensor housing. A lumped parameter model is established to investigate the influence of the contact force on the sensor signal. Experiments show that a prototype BAW passive wireless sensor has a sensitivity of 4 Hz/με when the wireless sensing distance is 10 cm. The resonant frequency of the sensor is almost independent of the coupling coefficient, which indicates that the sensor can reduce the measurement error caused by misalignment or relative movement between coils. Thanks to the high stability and modest sensing distance, this sensor may be compatible with a UAV-based monitoring platform for the strain monitoring of large buildings. Full article

The development of mobile 5G technology poses new challenges for high-frequency and high-performance filters. However, current commercial acoustic wave filters mainly focus on 4G LTE, which operates below 3 GHz. It is necessary to accelerate research on high-frequency acoustic wave filters. A high-selectivity film bulk acoustic resonator (FBAR) filter chip for the 3.4–3.6 GHz range was designed and fabricated in this paper. The design procedure includes FBAR parameter fitting, filter schematic analysis, and the generation principle of transmission zeros (TZs). The measured results show that the filter chip is of high roll-off and stopband suppression. Most of the stopband suppression is better than 35 dB. Finally, error analysis was conducted, and FBAR parameters were modified after testing for future filter design work. Full article

The past few decades have witnessed the ultra-fast development of wireless telecommunication systems, such as mobile communication, global positioning, and data transmission systems. In these applications, radio frequency (RF) acoustic devices, such as bulk acoustic waves (BAW) and surface acoustic waves (SAW) devices, play an important role. As the integration technology of BAW and SAW devices is becoming more mature day by day, their application in the physical and biochemical sensing and actuating fields has also gradually expanded. This has led to a profusion of associated literature, and this article particularly aims to help young professionals and students obtain a comprehensive overview of such acoustic technologies. In this perspective, we report and discuss the key basic principles of SAW and BAW devices and their typical geometries and electrical characterization methodology. Regarding BAW devices, we give particular attention to film bulk acoustic resonators (FBARs), due to their advantages in terms of high frequency operation and integrability. Examples illustrating their application as RF filters, physical sensors and actuators, and biochemical sensors are presented. We then discuss recent promising studies that pave the way for the exploitation of these elastic wave devices for new applications that fit into current challenges, especially in quantum acoustics (single-electron probe/control and coherent coupling between magnons and phonons) or in other fields. Full article

To solve the problem of filter bandwidth in 5G communication, it is urgent to develop an acoustic resonator with a large effective electromechanical coupling coefficient (K_eff²). In this paper, the dependence between the resonance area and the performance of the bulk acoustic wave (BAW) resonator is studied. The solidly mounted resonators (SMRs) based on 43° Y cut lithium niobate (LN) were fabricated by the wafer transfer technique. The on-chip inductor was integrated with the BAW resonator through a pad electrode. Resonators with different resonant areas were fabricated and tested. Finite element modeling (FEM) simulation of acoustic resonators and electromagnetic (EM) simulation of layout were carried out, respectively. The Modified Butterworth Van Dyke (MBVD) model was used to analyze the results, and simulation of the Mason model was adopted. The results show that the dependency relationship between the resonant area and the effective electromechanical coupling coefficient can be induced by on-chip inductance. In the resonant area range of 20 × 20 μm²~160 × 160 μm², the K_eff² increases from 11.97% to 43.28%. Full article

To meet the stringent requirements of 5G communication, we proposed a high-performance bulk acoustic wave (BAW) filter based on single crystal AlN piezoelectric films on a SiC substrate. The fabrication of the BAW filter is compatible with the GaN high electron mobility transistor (HEMT) process, enabling the implementation of the integration of the BAW device and high-performance monolithic microwave integrated circuit (MMIC). The single crystal AlN piezoelectric film with 650-nm thickness was epitaxially grown on the SiC substrate by Metal Organic Chemical Vapor Deposition (MOCVD). After wafer bonding and substrate removal, the single crystal AlN film with electrode layers was transferred to another SiC wafer to form an air gap type BAW. Testing results showed that the fabricated resonators have a maximum Q-factor up to 837 at 3.3 GHz resonant frequency and electromechanical coupling coefficient up to 7.2%. Ladder-type filters were developed to verify the capabilities of the BAW and process, which has a center frequency of 3.38 GHz with 160 MHz 3 dB bandwidth. The filter achieved a minimum 1.5 dB insertion loss and more than 31 dB out-of-band rejection. The high performance of the filters is attributed to the high crystallinity and low defects of epitaxial single crystal AlN films. Full article