Search Results (57)

The U-shaped Metal-Oxide-Semiconductor Field-Effect Transistor (UMOS or trench FET) is one of the most widely used semiconductor power devices worldwide, increasingly replacing the traditional vertical double-diffused MOSFET (DMOSFET) in various applications due to its superior electrical performance. However, a detailed experimental comparison of ion-induced Single-Event Burnout (SEB) in similarly rated silicon (Si) UMOS and DMOS devices remains lacking. This study presents a comprehensive experimental comparison of ion-induced charge collection mechanisms and SEB susceptibility in similarly rated Si UMOS and DMOS devices. Charge collection mechanisms due to alpha particles from ²⁴¹Am radiation source are analyzed, and SEB cross sections induced by heavy ions from particle accelerators are directly compared. The implications of the unique gate structure of Si UMOSFETs on their reliability in harsh radiation environments are discussed based on technology computer-aided design (TCAD) simulations. Full article

Today, many electronic circuits are required to be able to work effectively, even in environments exposed to ionizing radiation. This work examines the effects of ionizing radiation on shift registers realized in a bulk 16 nm FinFET technology, focusing on Single-Event Upset (SEU). An SEU occurs when a charged particle ionizes a sensitive node in the circuit, causing a stored bit to flip from one logical state to its opposite. This study estimates the saturation cross-section for the 16 nm FinFET technology and compares it with results from a 28 nm planar CMOS technology. The experiments were conducted at the SIRAD facility of INFN Legnaro Laboratories (Italy). The device under test was irradiated with the ion sources ⁵⁸$Ni$ and ²⁸$Si$, both with different tilt angles, to assess the number of SEUs with different LET and range values. Additionally, the study evaluates the effectiveness of the radiation-hardened by design technique, specifically the Triple Modular Redundancy (TMR), which is a technique commonly employed in planar technologies. However, in this particular case study, TMR proved to be ineffective, and the reasons behind this limitation are analyzed along with potential improvements for future designs. Full article

The primary objective of this research is to comprehensively investigate the equivalence of single-event effects (SEEs) in silicon carbide metal-oxide semiconductor field-effect transistors (SiC MOSFETs) that are induced by protons and heavy ions. The samples utilized in the experiments are the fourth-generation symmetric groove gate SiC MOSFETs. Proton irradiation experiments were meticulously executed at varying energies, namely 70 MeV, 100 MeV, and 200 MeV, while heavy-ion irradiation was carried out using 138 MeV Cl ions. During these experiments, the drain–source current (I_DS) and drain–source voltage (V_DS) were continuously and precisely monitored in real time. Experimental results demonstrate that single-event burnout (SEB) susceptibility correlates strongly with proton energy and applied drain–source bias. Notably, SiC MOSFETs exhibit a stronger tolerance to proton SEB compared to heavy-ion SEB. Proton irradiation results in a sudden elevation in I_DS, whereas heavy-ion irradiation leads to a gradual increase. In summary, the mechanism underlying proton-induced SEE is intricately related to the ionization of secondary particles. Future research endeavors should place a greater emphasis on comprehensively considering proton effects to establish a more complete and effective evaluation system for SiC MOSFET SEEs. Full article

Semiconductors characterized by ultrawide bandgaps (UWBGs), exceeding the SiC bandgap of 3.2 eV and the GaN bandgap of 3.4 eV, are currently under focus for applications in high-power and radio-frequency (RF) electronics, as well as in deep-ultraviolet optoelectronics and extreme environmental conditions. These semiconductors offer numerous advantages, such as a high breakdown field, exceptional thermal stability, and minimized power losses. This study used numerical simulation to investigate, at the material level, the single-particle radiation response of various UWBG semiconductors, such as aluminum gallium nitride alloys (Al_xGa_1−xN), diamond, and β-phase gallium oxide (β-Ga₂O₃), when exposed to ground-level neutrons. Through comprehensive Geant4 simulations covering the entire spectrum of atmospheric neutrons at sea level, this study provides an accurate comparison of the neutron radiation responses of these UWBG semiconductors focusing on the interaction processes, the number and nature of secondary ionizing products, their energy distributions, and the production of electron–hole pairs at the origin of single-event effects (SEEs) in microelectronics devices. Full article

Relay protection devices must operate continuously throughout the year without anomalies. With the integration of advanced technology and process chips in secondary equipment, new risks need to be addressed to ensure the reliability of these relay protection devices. One such risk is the impact of α-particles inducing single event effects (SEEs) on the secondary equipment. To date, there has been limited assessment of the effects of α-particles on relay protection devices from a system perspective. This study evaluates the impact of SEE on relay protection devices through a Monte Carlo simulation, which is verified by α-particle radiation, fault injection, and fault tree analysis. It discusses the influence of SEEs with and without hardening measures in place. Additionally, this study examines the soft error probability when the target processor runs both general workloads and specific application workloads. The current research proposes a low-cost and effective reliability assessment method for secondary equipment considering single event effects. The findings provide new insights for the enhancement of future electric power grid systems. Full article

This manuscript focuses on studying the radiation response of the Commercial-off-the-shelf (COTS) AD524CDZ operational amplifier. Total Ionizing Dose (TID) effects were tested using low-dose ⁶⁰Co irradiation. Single-Event Effect (SEE) sensitivity was studied on this operational amplifier using a 105 MeV proton beam. Additionally, further study of the SEE response was carried out using a Two-photon absorption laser to scan some sensitive sectors of the die. For this laser experiment, different gain setups and laser energies were employed to determine how the Single Event Transient (SET) response of the device was affected based on the test configuration. The results from the TID experiments revealed that the studied device remained functional after 100 krads (Si). Proton experiments revealed the studied device exhibited a high SET response with a maximum DC offset SET of about 1.5 V. Laser experiments demonstrated that there was a clear SET reduction when using 10× and 1000× gain setups. Full article

As a prominent focus in high-voltage power devices, SiC MOSFETs have broad application prospects in the aerospace field. Due to the unique characteristics of the space radiation environment, the reliability of SiC MOSFETs concerning single-event effects (SEEs) has garnered widespread attention. In this study, we employed accelerator-heavy ion irradiation experiments to study the degradation characteristics for SEEs of 1.2 kV SiC MOSFETs under different bias voltages and temperature conditions. The experimental results indicate that when the drain-source voltage (V_DS) exceeds 300 V, the device leakage current increases sharply, and even single-event burnout (SEB) occurs. Furthermore, a negative gate bias (V_GS) can make SEB more likely via gate damage and Poole–Frenkel emission (PF), reducing the V_DS threshold of the device. The radiation degradation behavior of SiC MOSFETs at different temperatures was compared and analyzed, showing that although high temperatures can increase the safe operating voltage of V_DS, they can also cause more severe latent gate damage. Through an in-depth analysis of the experimental data, the physical mechanism by which heavy ion irradiation causes gate leakage in SiC MOSFETs was explored. These research findings provide an essential basis for the reliable design of SiC MOSFETs in aerospace applications. Full article

The exposure of spaceborne devices to high-energy charged particles in space results in the occurrence of both a total ionizing dose (TID) and the single-event effect (SEE). These phenomena present significant challenges for the reliable operation of spacecraft and satellites. The rapid advancement of semiconductor fabrication processes and the continuous reduction in device feature size have led to an increase in the significance of the synergistic effects of TID and SEE in static random access memory (SRAM). In order to elucidate the involved physical mechanisms, the synergistic effects of TID and single-event upset (SEU) in a new kind of 130 nm 7T silicon-on-insulator (SOI) SRAM were investigated by means of cobalt-60 gamma-ray and heavy ion irradiation experiments. The findings demonstrate that 7T SOI SRAM is capable of maintaining normal reading and writing functionality when subjected to TID irradiation at a total dose of up to 750 krad(Si). In general, the TID was observed to reduce the SEU cross-section of the 7T SOI SRAM. However, the extent of this reduction was influenced by the heavy ion LET value and the specific writing data pattern employed. Based on the available evidence, it can be proposed that TID preirradiation represents a promising avenue for enhancing the resilience of 7T SOI SRAMs to SEU. Full article

GaN HEMT devices are sensitive to the single event effect (SEE) caused by heavy ions, and their reliability affects the safe use of space equipment. In this work, a Ge ion (LET = 37 MeV·cm²/mg) and Bi ion (LET = 98 MeV·cm²/mg) were used to irradiate Cascode GaN power devices by heavy ion accelerator experimental device. The differences of SEE under three conditions: pre-applied electrical stress, different LET values, and gate voltages are studied, and the related damage mechanism is discussed. The experimental results show that the pre-application of electrical stress before radiation leads to an electron de-trapping effect, generating defects within the GaN device. These defects will assist in charge collection so that the drain leakage current of the device will be enhanced. The higher the LET value, the more electron–hole pairs are ionized. Therefore, the charge collected by the drain increases, and the burn-out voltage advances. In the off state, the more negative the gate voltage, the higher the drain voltage of the GaN HEMT device, and the more serious the back-channel effect. This study provides an important theoretical basis for the reliability of GaN power devices in radiation environments. Full article

Electrical models play a crucial role in assessing the radiation sensitivity of devices. However, since they are usually not provided for end users, it is essential to have alternative modeling approaches to optimize circuit design before irradiation tests, and to support the understanding of post-irradiation data. This work proposes a novel simplified methodology to evaluate the single-event effects (SEEs) cross-section. To validate the proposed approach, we consider the 6T SRAM cell a case study in four technological nodes. The modeling considers layout features and the doping profile, presenting ways to estimate unknown parameters. The accuracy and limitations are determined by comparing our simulations with actual experimental data. The results demonstrated a strong correlation with irradiation data, without requiring any fitting of the simulation results or access to process design kit (PDK) data. This proves that our approach is a reliable method for calculating the single-event upset (SEU) cross-section for heavy-ion irradiation. Full article

In this paper, the single-event burnout (SEB) and reinforcement structure of 1200 V SiC MOSFET (SG-SBD-MOSFET) with split gate and Schottky barrier diode (SBD) embedded were studied. The device structure was established using Sentaurus TCAD, and the transient current changes of single-event effect (SEE), SEB threshold voltage, as well as the regularity of electric field peak distribution transfer were studied when heavy ions were incident from different regions of the device. Based on SEE analysis of the new structural device, two reinforcement structure designs for SEB resistance were studied, namely the expansion of the P+ body contact area and the design of a multi-layer N-type interval buffer layer. Firstly, two reinforcement schemes for SEB were analyzed separately, and then comprehensive design and analysis were carried out. The results showed that the SEB threshold voltage of heavy ions incident from the N+ source region was increased by 16% when using the P+ body contact area extension alone; when the device is reinforced with a multi-layer N-type interval buffer layer alone, the SEB threshold voltage increases by 29%; the comprehensive use of the P+ body contact area expansion and a multi-layer N-type interval buffer layer reinforcement increased the SEB threshold voltage by 33%. Overall, the breakdown voltage of the reinforced device decreased from 1632.935 V to 1403.135 V, which can be seen as reducing the remaining redundant voltage to 17%. The device’s performance was not significantly affected. Full article

Ionizing radiation induces the degradation of electronic systems. For memory devices, this phenomenon is often observed as the corruption of the stored data and, in some cases, the occurrence of sudden increases in current consumption during the operation. In this work, we propose enhanced experimental instrumentation to perform in-depth Single-Event Effects (SEE) monitoring and analysis of electronic systems. In particular, we focus on the Single-Event Latch-up (SEL) phenomena in memory devices, in which current monitoring and control are required for testing. To expose the features and function of the proposed instrumentation, we present results for a case study of an SRAM memory that has been used on-board PROBA-V ESA satellite. For this study, we performed experimental campaigns in two different irradiation facilities with protons and heavy ions, demonstrating the instrumentation capabilities, such as synchronization, high sampling rate, fast response time, and flexibility. Using this instrumentation, we could report the cross section for the observed SEEs and further investigate their correlation with the observed current behavior. Notably, it allowed us to identify that 95% of Single-Event Functional Interrupts (SEFIs) were triggered during SEL events. Full article

The single-event effects (SEEs) of frequency divider circuits and the radiation tolerance of the hardened circuit are studied in this paper. Based on the experimental results of SEEs in InP HBTs, a transient current model for sensitive transistors is established, taking into account the influence of factors such as laser energy, base-collector junction voltage, and radiation position. Moreover, the SEEs of the (2:1) static frequency divider circuit with the InP DHBT process are simulated under different laser energies by adding the transient current model at sensitive nodes. The effect of the time relationship between the pulsed laser and clock signal are discussed. Changes in differential output voltage and the degradation mechanism of unhardened circuits are analyzed, which are mainly attributed to the cross-coupling effect between the transistors in the differential pair. Furthermore, the inverted output is directly connected to the input, leading to a feedback loop and causing significant logic upsets. Finally, an effective hardened method is proposed to provide redundancy and mitigate the impacts of SEEs on the divider. The simulation results demonstrate a notable improvement in the radiation tolerance of the divider. Full article

This work explains that the Coulomb elastic process on the nucleus is a major source of single-event effects (SEE) for protons within the energy range of 1–10 MeV. The infinite range of Coulomb interactions implies an exceptionally high recoil probability. This research seeks to extend the investigations under which the elastic process becomes significant in the energy deposition process by providing a simplified methodology to evaluate the elastic contribution impact on the reliability of electronics. The goal is to derive a method to provide a simple way to calculate and predict the SEE cross-section. At very low energy, we observe a significant increase in the proton differential cross-section. The use of a direct Monte Carlo approach would mainly trigger low energy recoiling ions, and a very long calculation time would be necessary to observe the tail of the spectrum. In this sense, this work provides a simple methodology to calculate the SEE cross-section. The single-event upset (SEU) cross-section results demonstrate a good agreement with the experimental data in terms of shape and order of magnitude for different technological nodes. Full article

This paper thoroughly analyses the role of drift in the sensitive region in the single-event effect (SEE), with the aim of enhancing the single-particle radiation resistance of N-type metal-oxide semiconductor field-effect transistors (MOSFETs). It proposes a design for a Si-based device structure that extends the lightly doped source–drain region of the N-channel metal-oxide semiconductor (NMOS), thereby moderating the electric field of the sensitive region. This design leads to a 15.69% decrease in the charge collected at the leaky end of the device under the standard irradiation conditions. On this basis, a device structure is further proposed to form a composite metal-oxide semiconductor (MOS) by connecting a pn junction at the lightly doped source–drain end. By adding two charge paths, the leakage collection charge is further reduced by 13.85% under standard irradiation conditions. Moreover, the deterioration of the drive current in the purely growing lightly doped source–drain region can be further improved. Simulations of single-event effects under different irradiation conditions show that the device has good resistance to single-event irradiation, and the composite MOS structure smoothly converges to a 14.65% reduction in drain collection charge between 0.2 pC/$\mathsf{\mu }$m and 1 pC/$\mathsf{\mu }$m Linear Energy Transfer (LET) values. The incidence position at the source-to-channel interface collects the highest charge reduction rate of 28.23%. The collecting charge reduction rate is maximum, at 17.12%, when the incidence is at a 45-degree angle towards the source. Full article