Search Results (24)

Background. Statins are the main cholesterol-lowering treatments, but often they are stopped because of statin myopathy. Expensive second-line treatments are then prescribed, causing a burden on the health system. Previous research showed that creatine supplementation may be a relatively inexpensive, safe, and effective way to mitigate statin toxicity to the muscle. Methods. We thus investigated the tolerability and effectiveness of creatine supplementation in consecutive patients with statin myopathy, as observed at our Cardiology or Neurology outpatient services for previous cardiac or cerebral ischemic disease. Results. We confirmed previous findings showing that creatine supplementation is safe and well tolerated even in this elderly population. Eleven of the thirteen enrolled patients completed the study, and only one patient interrupted the study because of a creatine-related issue (elevation of serum creatinine). Creatine supplementation significantly reduced the Shewmon and Craig’s “myopathy score”, while it did not reduce serum creatine kinase (CK), a marker of muscle structural damage. Notably, creatine supplementation was effective at a dose of 1 g. t.i.d., lower than usually prescribed in the international literature and within the recommendations of health agencies like the Italian Ministry of Health. Conclusion. Creatine supplementation may improve statin myopathy in its milder and/or earlier form when serum CK is not elevated. Since creatine is relatively inexpensive, its supplementation may be used instead of switching from statins to the very expensive second-line anti-cholesterol treatments. Full article

This paper investigates the temperature-dependent effects of gamma-ray irradiation on β-Ga₂O₃ vertical Schottky barrier diodes (SBDs) under a 100 V reverse bias condition at a total dose of 1 Mrad(Si). As the irradiation dose increased, the radiation damage became more severe. The total ionizing dose (TID) degradation behavior and mechanisms were evaluated through DC, capacitance–voltage (C-V), and low-frequency noise (LFN) measurements by varying irradiation, and the test results indicated that TID effects introduced interface defects and altered the carrier concentration within the material. The impact of TID effects was more pronounced at lower temperatures compared to higher temperatures. Additionally, the annealing effect in the high-temperature experimental conditions ameliorated the growth of interface trap defects caused by irradiation. These results suggest that compared to low-temperature testing, the device exhibits higher TID tolerance after high-temperature exposure, providing valuable insights for in-depth radiation reliability studies on subsequent related devices. Full article

This study designed a radiation-hardened (RH) complementary metal oxide semiconductor (CMOS) logic circuit based on an RH variable-gate (V-gate) n-MOSFET that was resistant to the total ionizing dose (TID) effect and evaluated its tolerance to radiation. Among the different CMOS logic circuits, NOT, NAND, and NOR gates were designed using V-gate n-MOSFETs by employing layout transformation techniques and standard p-MOSFETs. Before the process design, we predicted the radiation damage using modeling and simulation techniques and validated the tolerance by conducting actual radiation tests after the process design. Furthermore, we implemented the CMOS logic circuit process design in a 0.18 µm CMOS bulk process. The actual radiation test applied a total cumulative radiation dose of 25 kGy at 5 kGy per hour in a high-level gamma-ray irradiation facility. Consequently, the resistance of the RH CMOS logic circuit based on the RH V-gate n-MOSFET to the TID effect was validated through experiments. Full article

The total ionizing dose sensitivity of planar 150 nm CMOS technology is evaluated by measuring the DC responses of nMOSFETs at several irradiation steps up to 125 krad(SiO₂). Different TID sensitivities are measured for transistors built with different channel dimensions and operating voltages (I/O and core). The experimental results evidence strong relations between TID sensitivity and the doping profiles in the channel. I/O transistors have the highest TID sensitivity due to their thicker gate oxide and lower bulk doping compared with core devices. In general, narrow-channel devices have the worst degradation with negative threshold voltage shifts, transconductance variations and increased subthreshold leakage currents, suggesting charge trapping in shallow trench isolation (STI). The enhanced TID tolerance of short-channel core devices is most likely related to the increased channel doping induced by the overlapping of halo implantations. Finally, transistors fabricated for low-leakage applications exhibit near insensitivity to TID due to higher bulk doping used during the fabrication to minimize the drain-to-source leakage current. Full article

Light-emitting diodes (LEDs) are of interest for implementation in radiation environments, such as part of illumination systems of radiation-tolerant cameras able to provide images at high doses (>MGy). It is then mandatory to characterize the radiation effects on all of the LED key properties exploited for such applications. To this aim, the evolution of the optical properties of commercial LEDs after they have been exposed to γ-rays, up to total ionizing dose (TID) levels of 2 MGy(air) at room temperature, is discussed. The devices under test include four LEDs of different colors (red, green, blue and white) in the same package. This allows a direct comparison between the responses of the different structures and technologies, as the proximity between the diodes ensures the uniformity of their irradiation conditions. The radiation effect on the electron–photon conversion mechanisms inside these LEDs is investigated through the evolution of their external quantum efficiency (EQE) vs. current characteristics. The spectral emission pattern of LEDs after irradiation at different dose levels is then characterized to estimate the TID effects on the lens which surrounds the LED package. The presented results show a monotone radiation-induced EQE decrease as a function of the TID, especially in the red LEDs. For the tested red LEDs, the EQE decreased up to 78% after a TID of 1 MGy when they were OFF during irradiation, and up to 8% when they were ON during irradiation. A visual inspection of the devices after irradiation shows a mechanical degradation of the lens shared among the four diodes. However, the emission pattern analysis does not show any significant radiation-induced changes in the optical properties of the lens. Based on these results, it appears possible to design LED-based illumination systems able to survive to MGy dose levels that can be integrated as subsystems of radiation-hardened cameras. Full article

Electronic equipment in nuclear power plants and nuclear warfare is damaged by transient effects that cause high-energy pulsed radiation. There is a concern that this type of damage can even cause enormous economic losses and human casualties by paralyzing control systems. To solve this problem, this study proposes a complementary metal-oxide semiconductor (CMOS) logic-based, switching detection circuit that can detect pulsed radiations at a fast rate. This circuit improved response speed and power consumption by using the switching operation of digital logic compared with conventional circuits. Furthermore, radiation tolerance to total ionizing dose (TID) effects was achieved even in a cumulative radiation environment because of the use of the design using p-metal-oxide semiconductor field effect transistor (p-MOSFET). The proposed detection circuit was manufactured by a 0.18 µm CMOS bulk process for integration. Normal operation in the detection range of 2.0 × 10⁷ rad(si)/s was verified by pulsed radiation test evaluations, and the tolerance properties to a radiation of 2 Mrad was verified based on cumulative radiation test evaluations. Full article

Background: The aim of this study is to demonstrate that a double balloon catheter combined with oxytocin decreases time between induction of labor and delivery (TID) as compared to a vaginal dinoprostone insert in cases of premature rupture of membranes at term. Methods: This is a prospective, randomized, controlled trial including patient undergoing labor induction for PROM at term with an unfavorable cervix in Clermont-Ferrand university hospital. We compared the double balloon catheter over a period of 12 h with adjunction of oxytocin 6 h after catheter insertion versus dinoprostone vaginal insert. After device ablation, cervical ripening continued only with oxytocin. The main outcome was TID. Secondary outcomes concerned delivery mode, as well as maternal and fetal outcome, and were adjusted for parity. Results: 40 patients per group were randomized. Each group had similar baseline characteristics. The study failed to demonstrate reduced TID (16.2 versus 20.2 h, ES = 0.16 (−0.27 to 0.60), p = 0.12) in the catheter group versus dinoprostone except in nulliparous women (17.0 versus 26.5 h, ES = 0.62 (0.10 to 1.14), p = 0.006). The rate of vaginal delivery <24 h significantly increased with combined induction (88.5% versus 66.6%, p = 0.03). No statistical difference was observed concerning caesarean rate (12.5% versus 17.5%, p > 0.05), chorioamnionitis (0% versus 2.5%, p = 1), postpartum endometritis, or maternal or neonatal outcomes. Procedure-related pain and tolerance to devices were found to be similar for the two methods. Interpretation: The double balloon catheter combined with oxytocin is an alternative for cervical ripening in case of PROM at term, and may reduce TID in nulliparous women. Full article

The food availability and dietary behaviours in Greenland have changed with increasing Westernisation. Food reward is an important driver of food choice and intake, which has not previously been explored in the Arctic population. The aim of this study was to explore differences in food reward after a four-week intervention period with a traditional Inuit diet (TID) or Westernised diet (WD) in Inuit populations in Northern and Western Greenland. This cross-sectional analysis included 44 adults (n = 20 after TID and n = 24 after WD). We assessed the food reward components, explicit liking and implicit wanting, using the Leeds Food Preference Questionnaire under standardised conditions 60 min after drinking a glucose drink as part of an oral glucose tolerance test after four weeks following a TID or WD. The food intake was assessed using food frequency questionnaires. The intervention groups differed only in implicit wanting for high-fat sweet foods, with higher implicit wanting among the participants following TID compared to WD. Both groups had lower explicit liking and implicit wanting for sweet relative to savoury foods and for high-fat relative to low-fat foods. This exploratory study can guide future studies in Inuit populations to include measures of food reward to better understand food intake in the Arctic. Full article

The fin field-effect transistor (FinFET) has been the mainstream technology on the VLSI platform since the 22 nm node. The silicon-on-insulator (SOI) FinFET, featuring low power consumption, superior computational power and high single-event effect (SEE) resistance, shows advantages in integrated circuits for space applications. In this work, a rad-hard design methodology for SOI FinFETs is shown to improve the devices’ tolerance against the Total Ionizing Dose (TID) effect. Since the fin height direction enables a new dimension for design optimization, a 3D Source/Drain (S/D) design combined with a gate dielectric de-footing technique, which has been readily developed for the 14 nm node FinFETs, is proposed as an effective method for SOI FinFETs’ TID hardening. More importantly, the governing mechanism is thoroughly investigated using fully calibrated technology computer-aided design (TCAD) simulations to guide design optimizations. The analysis demonstrates that the 3D rad-hard design can modulate the leakage path in 14 nm node n-type SOI FinFETs, effectively suppress the transistors’ sensitivity to the TID charge and reduce the threshold voltage shift by >2×. Furthermore, the rad-hard design can reduce the electric field in the BOX region and lower its charge capture rate under radiation, further improving the transistor’s robustness. Full article

This paper presents the first fully integrated radiation-tolerant All-Digital Phase-Locked Loop (PLL) and Clock and Data Recovery (CDR) circuit for wireline communication applications. Several radiation hardening techniques are proposed to achieve state-of-the-art immunity to Single-Event Effects (SEEs) up to 62.5 MeV cm² mg⁻¹ as well as tolerance to the Total Ionizing Dose (TID) exceeding 1.5 Grad. The LC Digitally Controlled Oscillator (DCO) is implemented without MOS varactors, avoiding the use of a highly SEE sensitive circuit element. The circuit is designed to operate at reference clock frequencies from 40 MHz to 320 MHz or at data rates from 40 Mbps to 320 Mbps and displays a jitter performance of 520 fs with a power dissipation of only 11 mW and an FOM of $-235$ dB. Full article

For a reliable and stable sensor system, it is essential to precisely measure various sensor signals, such as electromagnetic field, pressure, and temperature. The measured analog signal is converted into digital bits through the sensor readout system. However, in extreme radiation environments, such as in space, during flights, and in nuclear fusion reactors, the performance of the analog-to-digital converter (ADC) constituting the sensor readout system can be degraded due to soft errors caused by radiation effects, leading to system malfunction. This paper proposes a soft-error-tolerant successive-approximation-register (SAR) ADC using dual-capacitor sample-and-hold (S/H) control, which has robust characteristics against total ionizing dose (TID) and single event effects (SEE). The proposed ADC was fabricated using 65-nm CMOS process, and its soft-error-tolerant performance was measured in radiation environments. Additionally, the proposed circuit techniques were verified by utilizing a radiation simulator CAD tool. Full article

Testing at system level is evaluated by measuring the sensitivity of point-of-load (PoL) converter parameters, submitted to total ionizing dose (TID) irradiations, at both system and component levels. Testing at system level shows that the complete system can be fully functional at the TID level more than two times higher than the qualification level obtained using a standard-based component-level approach. Analysis of the failure processes shows that the TID tolerance during testing at system level is increased due to internal compensation in the system. Finally, advantages and shortcomings of the testing at system level are discussed. Full article

In this study, the effects of the total ionizing dose (TID) on a nanowire (NW) field-effect transistor (FET) and a nanosheet (NS) FET were analyzed. The devices have Gate-all-around (GAA) structure that are less affected by TID effects because GAA structures have better gate controllability than previously proposed structures, such as planar MOSFETs and FinFETs. However, even for GAA devices with the same channel cross-sectional area and equivalent oxide thickness, structural differences can exist, which can result in different tolerances of TID effects. To observe the device and circuit operation characteristics of these GAA devices with structural differences, n-type and p-type devices were designed and simulated. The circuit simulation according to TID effects was conducted using Berkeley short-channel insulated-gate FET model (BSIM) common multi-gate (CMG) parameters. The NS-FET generated more V_T shift than the NW-FET because the NS-FET had a wider gate oxide area and channel circumference, resulting in more interface hole traps. The abnormal V_T shift leads to causing unstable circuit operation and delays. Therefore, it was confirmed that the ability of the NW-FET to tolerate TID effects was better than that of the NS-FET. Full article

In the present study, the layout structure of an n-MOSFET, which is vulnerable to radiation, was designed in a different way to enhance its tolerance to radiation. Radiation damage assessment was conducted using modeling and simulation (M&S) techniques before actual semiconductor process fabrication and radiation tests to verify its tolerance properties. Based on the M&S techniques, the role of each layer was determined to improve the radiation tolerance of semiconductors, and the layout design of an n-MOSFET with enhanced radiation tolerance was optimized. The optimized radiation-tolerant n-MOSFET design was implemented in the 0.18-um CMOS bulk process, and radiation exposure tests were conducted on the device. A cumulative radiation dose up to 2 Mrad(Si) was applied to verify its radiation-tolerant performance. Developing new devices using M&S techniques for radiation damage assessment allows reliable estimates of their electrical and radiation-tolerant properties to be obtained in advance of the actual manufacturing process, thereby minimizing development costs and time. Full article

In this study, we analyzed the total ionizing dose (TID) effect characteristics of p-type FinFET and Nanowire FET (NW-FET) according to the structural aspect through comparison of the two devices. Similar to n-type devices, p-type NW-FETs are less affected than FinFETs by the TID effect. For the inverter TID circuit simulation, both n- and p-types of FinFET and NW-FET were analyzed regarding the TID effect. The inverter operation considering the TID effect was verified using the Berkeley short-channel insulated-gate FET model (BSIM) common multi-gate (CMG) parameters. In addition, an inverter circuit composed of the NW-FET exhibited a smaller change by the TID than that of an inverter circuit composed of the FinFET. Therefore, the gate controllability of the gate-all-around (GAA) device had an excellent tolerance to not only short-channel effects (SCE) but also TID effects. Full article