Sign in to use this feature.

Years

Between: -

Subjects

remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline

Journals

Article Types

Countries / Regions

Search Results (32)

Search Parameters:
Keywords = charged domain wall

Order results
Result details
Results per page
Select all
Export citation of selected articles as:
18 pages, 908 KB  
Article
Diffusiophoresis of a Weakly Charged Dielectric Fluid Droplet in a Cylindrical Pore
by Lily Chuang, Sunny Chen, Nemo Chang, Jean Chien, Venesa Liao and Eric Lee
Micromachines 2025, 16(6), 707; https://doi.org/10.3390/mi16060707 - 13 Jun 2025
Cited by 1 | Viewed by 699
Abstract
Diffusiophoresis of a weakly charged dielectric droplet in a cylindrical pore is investigated theoretically in this study. The governing fundamental electrokinetic equations are solved with a patched pseudo-spectral method based on Chebyshev polynomials, coupled with a geometric mapping scheme to take care of [...] Read more.
Diffusiophoresis of a weakly charged dielectric droplet in a cylindrical pore is investigated theoretically in this study. The governing fundamental electrokinetic equations are solved with a patched pseudo-spectral method based on Chebyshev polynomials, coupled with a geometric mapping scheme to take care of the irregular solution domain. The impact of the boundary confinement effect upon the droplet motion is explored in detail, which is most profound in narrow channels. We found, among other things, that the droplet moving direction may reverse with varying channel widths. Enhanced motion-inducing double-layer polarization due to the presence of a nearby channel wall is found to be responsible for it. In particular, an interesting and seemingly peculiar phenomenon referred to as the “solidification phenomenon” is observed here at some specific critical droplet sizes or electrolyte strengths in narrow channels, under which all the droplets move at identical speeds regardless of their viscosities. They move like a rigid particle without the surface spinning motions and the induced interior recirculating vortex flows. As the corresponding shear rate is zero at this point, the droplet is resilient to undesirable exterior shear stresses tending to damage the droplet in motion. This provides a helpful guideline in the fabrication of liposomes in drug delivery in terms of the optimal liposome size, as well as in the microfluidic and nanofluidic manipulations of cells, among other potential practical applications. The effects of other parameters of electrokinetic interest are also examined. Full article
Show Figures

Figure 1

10 pages, 5874 KB  
Article
Field-Induced Evolution of As-Grown Domain Structure in Annealed Calcium Orthovanadate Crystal
by Vladimir Yuzhakov, Maria Chuvakova, Anton Turygin, Ekaterina Shishkina, Maksim Nebogatikov, Eduard Linker, Andrey Akhmatkhanov, Mikhail Kosobokov, Semion Melnikov, Elena Pelegova, Lyudmila Ivleva and Vladimir Shur
Crystals 2025, 15(4), 315; https://doi.org/10.3390/cryst15040315 - 27 Mar 2025
Viewed by 411
Abstract
The field-induced evolution of as-grown domain structure was studied in an annealed calcium orthovanadate (CVO) crystal under application of the electric field pulses at elevated temperature using various domain imaging methods. It was shown that the evolution of the domain structure with charged [...] Read more.
The field-induced evolution of as-grown domain structure was studied in an annealed calcium orthovanadate (CVO) crystal under application of the electric field pulses at elevated temperature using various domain imaging methods. It was shown that the evolution of the domain structure with charged domain walls (CDWs) in the crystal bulk under the action of the electric field represented the sideways growth of large domains in the bulk and the appearance of unstable and stable domains at the surface. The sideways domain growth in the bulk was caused by the lowest charge density at the domain edges. The screening retardation facilitated the appearance of the ledges at the CDWs, which grew in the external field and became stable after touching the polar surface. The rare ledges that appeared far from CDW edge interrupted growth in the vicinity of the polar surface and backswitched completely after the field switch-off. The obtained effects were considered in terms of the kinetic approach. The finite element method was used to calculate the distribution of the residual depolarization field near the domain. The demonstrated facilitating of the domain switching by annealing in a calcium-rich atmosphere shows the way to create the periodic domain structure in CVO. Full article
(This article belongs to the Section Inorganic Crystalline Materials)
Show Figures

Graphical abstract

25 pages, 717 KB  
Review
Baryon Construction with η Meson Field
by Fan Lin and Yong-Liang Ma
Symmetry 2025, 17(4), 477; https://doi.org/10.3390/sym17040477 - 21 Mar 2025
Cited by 1 | Viewed by 641
Abstract
In the low-energy regime, baryons with Nf2 have long been constructed as skyrmions or through bag models, but such constructions for Nf=1 are hindered by the trivial topological structure of the meson field. Recent proposals suggest that [...] Read more.
In the low-energy regime, baryons with Nf2 have long been constructed as skyrmions or through bag models, but such constructions for Nf=1 are hindered by the trivial topological structure of the meson field. Recent proposals suggest that one-flavor baryons can instead be interpreted as quantum Hall droplets on the η domain wall, providing a potential link to quark–hadron continuity at high density. In retrospect, the qualitative or semi-qualitative construction of one-flavor baryons on the η domain wall reveals that these baryons can be described as quantum Hall droplets, resembling topological solitons akin to skyrmions. Using an effective theory on the η domain wall, which is conjectured to be the Chern–Simons–Higgs theory, it is discussed that its vortex solution with unit baryon numbers naturally has a spin of Nc/2, and thus can be interpreted as a baryon or multi-baryon structure. The particle–vortex duality suggests that quarks carry a fractional topological charge of 1/Nc and obey fractional statistics. In terms of chiral bag models, confinement can be attributed to the monopoles confined within the bag, and the vector meson fields on the bag surface are essential for ensuring the correct baryon number in the chiral bag framework, thereby providing deeper insights into baryons as non-trivial topological structures of the meson field. In this paper, we review the progress in this development, with a special focus on the η domain wall dynamics. Naive extensions to Nf2 are also discussed. Full article
(This article belongs to the Section Physics)
Show Figures

Figure 1

7 pages, 5470 KB  
Communication
Ferroelectric Domain Modulation with Tip-Poling Engineering in BiFeO3 Films
by Xiaojun Qiao, Yuxuan Wu, Wenping Geng and Xiujian Chou
Micromachines 2024, 15(11), 1352; https://doi.org/10.3390/mi15111352 - 5 Nov 2024
Viewed by 1410
Abstract
BiFeO3 (BFO) films with ferroelectricity are the most promising candidates regarding the next generation of storage devices and sensors. The comprehensive understanding of ferroelectric switchable properties is challenging and critical to robust domain wall nanoelectronics. Herein, the domain dynamic was explored in [...] Read more.
BiFeO3 (BFO) films with ferroelectricity are the most promising candidates regarding the next generation of storage devices and sensors. The comprehensive understanding of ferroelectric switchable properties is challenging and critical to robust domain wall nanoelectronics. Herein, the domain dynamic was explored in detail under external bias conditions using scanning probe microscopy, which is meaningful for the understanding of domain dynamics and the foundation of ferroelectric devices. The results show that domain reversal occurred under external electric fields with sufficient energy excitation, combined with the existence of a charged domain wall. These findings extend the domain dynamic and current paths in ferroelectric films and shed light on the potential applications for ferroelectric devices. Full article
Show Figures

Figure 1

13 pages, 21084 KB  
Article
Meron-Mediated Phase Transitions in Quasi-Two-Dimensional Chiral Magnets with Easy-Plane Anisotropy: Successive Transformation of the Hexagonal Skyrmion Lattice into the Square Lattice and into the Tilted FM State
by Andrey O. Leonov
Nanomaterials 2024, 14(18), 1524; https://doi.org/10.3390/nano14181524 - 20 Sep 2024
Cited by 2 | Viewed by 1431
Abstract
I revisit the well-known structural transition between hexagonal and square skyrmion lattices and subsequent first-order phase transition into the tilted ferromagnetic state as induced by the increasing easy-plane anisotropy in quasi-two-dimensional chiral magnets. I show that the hexagonal skyrmion order first transforms into [...] Read more.
I revisit the well-known structural transition between hexagonal and square skyrmion lattices and subsequent first-order phase transition into the tilted ferromagnetic state as induced by the increasing easy-plane anisotropy in quasi-two-dimensional chiral magnets. I show that the hexagonal skyrmion order first transforms into a rhombic skyrmion lattice, which, adjusts into a perfect square arrangement of skyrmions (“a square meron-antimeron crystal”) within a narrow range of anisotropy values. These transitions are mediated by merons and anti-merons emerging in the boundaries between skyrmion cells; energetically unfavorable anti-merons annihilate, whereas pairs of neighboring merons merge. The tilted ferromagnetic state sets in via mutual annihilation of oppositely charged merons; as an outcome, it contains bimeron clusters (chains) with the attracting inter-soliton potential. Additionally, I demonstrate that domain-wall merons are actively involved in the dynamic response of the square skyrmion lattices. As an example, I theoretically study spin–wave modes and their excitations by AC magnetic fields. Two found resonance peaks are the result of the complex dynamics of the domain-wall merons; whereas in the high-frequency mode the merons rotate counterclockwise, as one might expect, in the low-frequency mode merons are instead created and annihilated consistently with the rotational motion of the domain boundaries. Full article
(This article belongs to the Section Theory and Simulation of Nanostructures)
Show Figures

Figure 1

15 pages, 3848 KB  
Article
Intrinsic Conductance of Ferroelectric Charged Domain Walls
by Feng Yang
Physics 2024, 6(3), 1083-1097; https://doi.org/10.3390/physics6030067 - 29 Aug 2024
Cited by 1 | Viewed by 2313
Abstract
Ferroelectric charged domain walls offer a revolutionary path for next-generation ferroelectric devices due to their exceptional conductivity within an otherwise insulating matrix. However, quantitative understanding of this “giant conductivity” has remained elusive due to the lack of robust models describing carrier behavior within [...] Read more.
Ferroelectric charged domain walls offer a revolutionary path for next-generation ferroelectric devices due to their exceptional conductivity within an otherwise insulating matrix. However, quantitative understanding of this “giant conductivity” has remained elusive due to the lack of robust models describing carrier behavior within CDWs. The current paper bridges this critical knowledge gap by employing a first-principles approach that incorporates Boltzmann transport theory and the relaxation time approximation. This strategy enables the calculation of carrier concentration, mobility, and conductivity for both head-to-head and tail-to-tail domain wall configurations within a stabilized periodic structure. The comprehensive transport analysis given here reveals that the accumulation of charge carriers, particularly their concentration, is the dominant factor governing domain wall conductance. Interestingly, observed conductance differences between head-to-head and tail-to-tail walls primarily arise from variations in carrier mobility. Additionally, this study demonstrates a significantly reduced domain wall width compared to previous reports. This miniaturization is attributed to the presence of compressive strain, which lowers the energy barrier for electron–hole pair generation. Furthermore, the findings here suggest that reducing the band gap presents a viable strategy for stabilizing charged domain walls. These results pave the way for the optimization and development of domain wall devices across a spectrum of ferroelectric materials. Full article
(This article belongs to the Section Applied Physics)
Show Figures

Figure 1

13 pages, 3951 KB  
Article
Exploring the Reconfigurable Memory Effect in Electroforming-Free YMnO3-Based Resistive Switches: Towards a Tunable Frequency Response
by Xianyue Zhao, Nan Du, Jan Dellith, Marco Diegel, Uwe Hübner, Bernhard Wicht and Heidemarie Schmidt
Materials 2024, 17(11), 2748; https://doi.org/10.3390/ma17112748 - 5 Jun 2024
Cited by 1 | Viewed by 1190
Abstract
Memristors, since their inception, have demonstrated remarkable characteristics, notably the exceptional reconfigurability of their memory. This study delves into electroforming-free YMnO3 (YMO)-based resistive switches, emphasizing the reconfigurable memory effect in multiferroic YMO thin films with metallically conducting electrodes and their pivotal role [...] Read more.
Memristors, since their inception, have demonstrated remarkable characteristics, notably the exceptional reconfigurability of their memory. This study delves into electroforming-free YMnO3 (YMO)-based resistive switches, emphasizing the reconfigurable memory effect in multiferroic YMO thin films with metallically conducting electrodes and their pivotal role in achieving adaptable frequency responses in impedance circuits consisting of reconfigurable YMO-based resistive switches and no reconfigurable passive elements, e.g., inductors and capacitors. The multiferroic YMO possesses a network of charged domain walls which can be reconfigured by a time-dependent voltage applied between the metallically conducting electrodes. Through experimental demonstrations, this study scrutinizes the impedance response not only for individual switch devices but also for impedance circuitry based on YMO resistive switches in both low- and high-resistance states, interfacing with capacitors and inductors in parallel and series configurations. Scrutinized Nyquist plots visually capture the intricate dynamics of impedance circuitry, revealing the potential of electroforming-free YMO resistive switches in finely tuning frequency responses within impedance circuits. This adaptability, rooted in the unique properties of YMO, signifies a paradigm shift heralding the advent of advanced and flexible electronic technologies. Full article
(This article belongs to the Special Issue Advanced Semiconductor/Memory Materials and Devices)
Show Figures

Figure 1

20 pages, 2278 KB  
Review
Progress in Spin Logic Devices Based on Domain-Wall Motion
by Bob Bert Vermeulen, Bart Sorée, Sebastien Couet, Kristiaan Temst and Van Dai Nguyen
Micromachines 2024, 15(6), 696; https://doi.org/10.3390/mi15060696 - 24 May 2024
Cited by 4 | Viewed by 4318
Abstract
Spintronics, utilizing both the charge and spin of electrons, benefits from the nonvolatility, low switching energy, and collective behavior of magnetization. These properties allow the development of magnetoresistive random access memories, with magnetic tunnel junctions (MTJs) playing a central role. Various spin logic [...] Read more.
Spintronics, utilizing both the charge and spin of electrons, benefits from the nonvolatility, low switching energy, and collective behavior of magnetization. These properties allow the development of magnetoresistive random access memories, with magnetic tunnel junctions (MTJs) playing a central role. Various spin logic concepts are also extensively explored. Among these, spin logic devices based on the motion of magnetic domain walls (DWs) enable the implementation of compact and energy-efficient logic circuits. In these devices, DW motion within a magnetic track enables spin information processing, while MTJs at the input and output serve as electrical writing and reading elements. DW logic holds promise for simplifying logic circuit complexity by performing multiple functions within a single device. Nevertheless, the demonstration of DW logic circuits with electrical writing and reading at the nanoscale is still needed to unveil their practical application potential. In this review, we discuss material advancements for high-speed DW motion, progress in DW logic devices, groundbreaking demonstrations of current-driven DW logic, and its potential for practical applications. Additionally, we discuss alternative approaches for current-free information propagation, along with challenges and prospects for the development of DW logic. Full article
(This article belongs to the Special Issue Magnetic and Spin Devices, 3rd Edition)
Show Figures

Figure 1

14 pages, 960 KB  
Article
Advanced Modeling and Simulation of Multilayer Spin–Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling
by Mario Bendra, Roberto Lacerda de Orio, Siegfried Selberherr, Wolfgang Goes and Viktor Sverdlov
Micromachines 2024, 15(5), 568; https://doi.org/10.3390/mi15050568 - 26 Apr 2024
Cited by 5 | Viewed by 1949
Abstract
In advancing the study of magnetization dynamics in STT-MRAM devices, we employ the spin drift–diffusion model to address the back-hopping effect. This issue manifests as unwanted switching either in the composite free layer or in the reference layer in synthetic antiferromagnets—a challenge that [...] Read more.
In advancing the study of magnetization dynamics in STT-MRAM devices, we employ the spin drift–diffusion model to address the back-hopping effect. This issue manifests as unwanted switching either in the composite free layer or in the reference layer in synthetic antiferromagnets—a challenge that becomes more pronounced with device miniaturization. Although this miniaturization aims to enhance memory density, it inadvertently compromises data integrity. Parallel to this examination, our investigation of the interface exchange coupling within multilayer structures unveils critical insights into the efficacy and dependability of spintronic devices. We particularly scrutinize how exchange coupling, mediated by non-magnetic layers, influences the magnetic interplay between adjacent ferromagnetic layers, thereby affecting their magnetic stability and domain wall movements. This investigation is crucial for understanding the switching behavior in multi-layered structures. Our integrated methodology, which uses both charge and spin currents, demonstrates a comprehensive understanding of MRAM dynamics. It emphasizes the strategic optimization of exchange coupling to improve the performance of multi-layered spintronic devices. Such enhancements are anticipated to encourage improvements in data retention and the write/read speeds of memory devices. This research, thus, marks a significant leap forward in the refinement of high-capacity, high-performance memory technologies. Full article
(This article belongs to the Special Issue Magnetic and Spin Devices, 3rd Edition)
Show Figures

Figure 1

8 pages, 3455 KB  
Article
Metal–Semiconductor Behavior along the Line of Stacking Order Change in Gated Multilayer Graphene
by Włodzimierz Jaskólski
Materials 2024, 17(8), 1915; https://doi.org/10.3390/ma17081915 - 21 Apr 2024
Viewed by 1352
Abstract
We investigated gated multilayer graphene with stacking order changes along the armchair direction. We consider that some layers cracked to release shear strain at the stacking domain wall. The energy cones of graphene overlap along the corresponding direction in the k-space, so [...] Read more.
We investigated gated multilayer graphene with stacking order changes along the armchair direction. We consider that some layers cracked to release shear strain at the stacking domain wall. The energy cones of graphene overlap along the corresponding direction in the k-space, so the topological gapless states from different valleys also overlap. However, these states strongly interact and split due to atomic-scale defects caused by the broken layers, yielding an effective energy gap. We find that for some gate voltages, the gap states cross and the metallic behavior along the stacking domain wall can be restored. In particular cases, a flat band appears at the Fermi energy. We show that for small variations in the gate voltage, the charge occupying this band oscillates between the outer layers. Full article
(This article belongs to the Special Issue Nanodevices in 2D Materials: Theory and Simulations)
Show Figures

Figure 1

21 pages, 6090 KB  
Article
Study on the Influence of a Rigid Wall on Cavitation in Underwater Explosions Near the Free Surface
by Jun Yu, Xianpi Zhang, Yanjie Zhao, Lunping Zhang, Jiping Chen and Yuanqing Xu
Appl. Sci. 2024, 14(5), 1822; https://doi.org/10.3390/app14051822 - 23 Feb 2024
Cited by 1 | Viewed by 1263
Abstract
A two-fluid, phase transition-based multiphase flow model is employed to simulate the dynamics of phase transition between liquid and vapor phases during shock wave and rarefaction wave propagation in underwater explosions. The aim is to understand the influence of a rigid wall on [...] Read more.
A two-fluid, phase transition-based multiphase flow model is employed to simulate the dynamics of phase transition between liquid and vapor phases during shock wave and rarefaction wave propagation in underwater explosions. The aim is to understand the influence of a rigid wall on the cavitation evolution process and the cavitation collapse load, considering various charge quantities and water depths. The evolution of crucial physical qualities, such as the density, pressure, and the cavitation domain, within the flow field are analyzed and summarized. The presence of a rigid wall is found to significantly impact the cavitation evolution process in underwater explosions. It affects the shape, size, and dynamics of the cavitation domain, as well as the interaction between the explosion and the surrounding fluid. Specifically, the reflected wave on the wall influences the cavitation collapse load, leading to notable differences in the collapse time and collapse pressure compared to free-field conditions. Under different operating conditions, the size and position of the cavitation domain exhibit distinct changes. The proximity of the rigid wall results in unique patterns of cavitation domain evolution, which in turn lead to variations in the pressure distribution and the emergence of new cavitation regions. The findings of this study provide valuable insights into the behavior of cavitation and atomization induced by underwater explosions near the free surface. The understanding gained from these investigations can contribute to the development of effective safety measures and protective strategies in marine and underwater engineering applications. By accurately predicting and mitigating the effects of cavitation, it is possible to enhance the design and operation of underwater structures, ensuring their integrity and minimizing the potential risks associated with underwater explosions. Full article
(This article belongs to the Section Marine Science and Engineering)
Show Figures

Figure 1

14 pages, 2959 KB  
Article
Impact of Single-Walled Carbon Nanotube Functionalization on Ion and Water Molecule Transport at the Nanoscale
by Alia Mejri, Nicolas Arroyo, Guillaume Herlem, John Palmeri, Manoel Manghi, François Henn and Fabien Picaud
Nanomaterials 2024, 14(1), 117; https://doi.org/10.3390/nano14010117 - 3 Jan 2024
Cited by 7 | Viewed by 2934
Abstract
Nanofluidics has a very promising future owing to its numerous applications in many domains. It remains, however, very difficult to understand the basic physico-chemical principles that control the behavior of solvents confined in nanometric channels. Here, water and ion transport in carbon nanotubes [...] Read more.
Nanofluidics has a very promising future owing to its numerous applications in many domains. It remains, however, very difficult to understand the basic physico-chemical principles that control the behavior of solvents confined in nanometric channels. Here, water and ion transport in carbon nanotubes is investigated using classical force field molecular dynamics simulations. By combining one single walled carbon nanotube (uniformly charged or not) with two perforated graphene sheets, we mimic single nanopore devices similar to experimental ones. The graphitic edges delimit two reservoirs of water and ions in the simulation cell from which a voltage is imposed through the application of an external electric field. By analyzing the evolution of the electrolyte conductivity, the role of the carbon nanotube geometric parameters (radius and chirality) and of the functionalization of the carbon nanotube entrances with OH or COO groups is investigated for different concentrations of group functions. Full article
Show Figures

Figure 1

11 pages, 2949 KB  
Article
Creation of a Periodic Domain Structure in MgOLN by Femtosecond Laser Irradiation
by Boris Lisjikh, Mikhail Kosobokov, Anton Turygin, Artem Efimov and Vladimir Shur
Photonics 2023, 10(11), 1211; https://doi.org/10.3390/photonics10111211 - 31 Oct 2023
Cited by 9 | Viewed by 1798
Abstract
The systematic imaging of the damaged tracks and domain patterns created in the MgOLN plates by one-step fs-laser irradiation at different depths was carried out. It is shown that the domains in the bulk have a spindle-like shape and start to grow in [...] Read more.
The systematic imaging of the damaged tracks and domain patterns created in the MgOLN plates by one-step fs-laser irradiation at different depths was carried out. It is shown that the domains in the bulk have a spindle-like shape and start to grow in the Z− direction from the track ends. The domain shape changes from a spindle-like one with charged walls to a hexagonal prism with neutral walls after the domain reaches the polar surface. The length of the domains located in the bulk increases linearly with the pulse energy. The hexagonal domain shape at the surface is typical for the crystals of the lithium niobate family. The obtained effects have been considered in terms of the kinetic approach. After irradiation, the domains appear in the vicinity of the track ends with maximum electric field strength and grow under the action of a spatially nonuniform pyroelectric field. The key role of the pyroelectric field is confirmed by the creation of new domains at the surface without correlation with the position of the focusing point located at the vicinity of the surface. The 3D domain pattern was produced, which represented four layers of the regular matrices consisting of elongated domains about 100 μm in length. Full article
(This article belongs to the Special Issue Ultrashort Laser Pulses)
Show Figures

Figure 1

18 pages, 482 KB  
Article
Charge-Density Waves vs. Superconductivity: Some Results and Future Perspectives
by Giulia Venditti and Sergio Caprara
Condens. Matter 2023, 8(3), 54; https://doi.org/10.3390/condmat8030054 - 27 Jun 2023
Cited by 6 | Viewed by 4439
Abstract
Increasing experimental evidence suggests the occurrence of filamentary superconductivity in different (quasi) two-dimensional physical systems. In this piece of work, we discuss the proposal that under certain circumstances, this occurrence may be related to the competition with a phase characterized by charge ordering [...] Read more.
Increasing experimental evidence suggests the occurrence of filamentary superconductivity in different (quasi) two-dimensional physical systems. In this piece of work, we discuss the proposal that under certain circumstances, this occurrence may be related to the competition with a phase characterized by charge ordering in the form of charge-density waves. We provide a brief summary of experimental evidence supporting our argument in two paradigmatic classes of materials, namely transition metal dichalcogenides and cuprates superconductors. We present a simple Ginzburg–Landau two-order-parameters model as a starting point to address the study of such competition. We finally discuss the outcomes of a more sophisticated model, already presented in the literature and encoding the presence of impurities, and how it can be further improved in order to really address the interplay between charge-density waves and superconductivity and the possible occurrence of filamentary superconductivity at the domain walls between different charge-ordered regions. Full article
Show Figures

Figure 1

12 pages, 3622 KB  
Article
Competition between Ferroelectric and Ferroelastic Domain Wall Dynamics during Local Switching in Rhombohedral PMN-PT Single Crystals
by Denis Alikin, Anton Turygin, Andrei Ushakov, Mikhail Kosobokov, Yurij Alikin, Qingyuan Hu, Xin Liu, Zhuo Xu, Xiaoyong Wei and Vladimir Shur
Nanomaterials 2022, 12(21), 3912; https://doi.org/10.3390/nano12213912 - 6 Nov 2022
Cited by 5 | Viewed by 2897
Abstract
The possibility to control the charge, type, and density of domain walls allows properties of ferroelectric materials to be selectively enhanced or reduced. In ferroelectric–ferroelastic materials, two types of domain walls are possible: pure ferroelectric and ferroelastic–ferroelectric. In this paper, we demonstrated a [...] Read more.
The possibility to control the charge, type, and density of domain walls allows properties of ferroelectric materials to be selectively enhanced or reduced. In ferroelectric–ferroelastic materials, two types of domain walls are possible: pure ferroelectric and ferroelastic–ferroelectric. In this paper, we demonstrated a strategy to control the selective ferroelectric or ferroelastic domain wall formation in the (111) single-domain rhombohedral PMN-PT single crystals at the nanoscale by varying the relative humidity level in a scanning probe microscopy chamber. The solution of the corresponding coupled electro-mechanical boundary problem allows explaining observed competition between ferroelastic and ferroelectric domain growth. The reduction in the ferroelastic domain density during local switching at elevated humidity has been attributed to changes in the electric field spatial distribution and screening effectiveness. The established mechanism is important because it reveals a kinetic nature of the final domain patterns in multiaxial materials and thus provides a general pathway to create desirable domain structure in ferroelectric materials for applications in piezoelectric and optical devices. Full article
(This article belongs to the Special Issue Advanced Piezoelectric Materials for Applications)
Show Figures

Graphical abstract

Back to TopTop