Search Results (44)

Two-dimensional (2D) organic−inorganic hybrid perovskites (OIHPs) have emerged as promising candidates for next-generation optoelectronic applications. While vertical heterostructures of 2D OIHPs have been explored through mechanical stacking, the controlled fabrication of lateral heterostructures remains a significant challenge. Here, we present a lithography-free, van der Waals mask-assisted strategy for the deterministic fabrication of 2D OIHP lateral heterostructures. Mechanically exfoliated 2D materials such as graphene serve as removable masks that enable selective conversion of unmasked perovskite regions via ion exchange reaction. This technique enables the fabrication of various lateral heterostructures, such as BA₂MA₂Pb₃I₁₀/MAPbI₃, PEAPbI₄/MAPbI₃, as well as BA₂MAPb₂I₇/MAPbBr₃. Furthermore, complex multiheterostructures and superlattices can be constructed through sequential masking and conversion processes. Moreover, to investigate the electronic properties and demonstrate potential device applications of the lateral heterostructures, we have fabricated an electrical diode based on a BA₂MA₂Pb₃I₁₀/MAPbI₃ lateral heterostructure. Stable electrical rectifying behavior with a rectification ratio of around 10 was observed. This general and flexible approach provides a robust platform for constructing 2D OIHPs lateral heterostructures and opens new pathways for their integration into high-performance optoelectronic devices. Full article

Integrating two-dimensional transition-metal dichalcogenides with graphene is attractive for low-power memory and neuromorphic hardware, yet sequential wet transfer leaves polymer residues and high contact resistance. We demonstrate a complementary metal–oxide–semiconductor (CMOS)-compatible, transfer-free route in which an atomically thin amorphous MoS₂ precursor is RF-sputtered directly onto chemical vapor-deposited few-layer graphene and crystallized by confined-space sulfurization at 800 °C. Grazing-incidence X-ray reflectivity, Raman spectroscopy, and X-ray photoelectron spectroscopy confirm the formation of residue-free, three-to-four-layer 2H-MoS₂ (roughness: 0.8–0.9 nm) over 1.5 cm × 2 cm coupons. Lateral MoS₂/graphene devices exhibit reproducible non-volatile resistive switching with a set transition (SET) near +6 V and an analogue ON/OFF ≈2.1, attributable to vacancy-induced Schottky-barrier modulation. The single-furnace magnetron sputtering + sulfurization sequence avoids toxic H₂S, polymer transfer steps, and high-resistance contacts, offering a cost-effective pathway toward wafer-scale 2D memristors compatible with back-end CMOS temperatures. Full article

Burgeoning two-dimensional (2D) materials provide more opportunities to overcome the shortcomings of silicon-based photodetectors. However, the inevitable carrier loss in the 2D material/Si heterojunction has seriously hindered further improvement in responsivity and detection speed. Here, we propose a graphene/PtSe₂/ultra-thin SiO₂/Si photodetector (PD) with multiple optimization mechanisms. Due to the fact that photo-generated carriers can travel in the graphene plane toward the Au electrode, the introduction of a top graphene contact with low sheet resistance provides a carrier collection path in the vertical direction and further restricts the carrier recombination behavior at the lateral grain boundary of PtSe₂ film. The ultra-thin SiO₂ passivation layer reduces the defects at the PtSe₂/Si heterojunction interface. As compared to the counterpart device without the graphene top contact, the responsivity, specific detectivity, and response speed of graphene/PtSe₂/ultra-thin SiO₂/Si PD under 808 nm illumination are improved to 0.572 A/W, 1.50 × 10¹¹ Jones, and 17.3/38.8 µs, respectively. The device can detect broad-spectrum optical signals as measured from 375 nm to 1550 nm under zero bias. The PD line array with 16-pixel units shows good near-infrared imaging ability at room temperature. Our study will provide guiding significance for how to improve the comprehensive properties of PDs based on 2D/Si heterostructure for practical applications. Full article

In the present study, self-assembled hierarchical CoMn-LDH, CoMn@CuZnS, and CoMn@CuZnFeS heterostructured composites were synthesized for bifunctional applications. As an electrode for a supercapacitor, CoMn-LDH demonstrated superior areal and specific capacitance of 5.323 F cm⁻² (279.49 mAh/g) at 4 mA cm⁻², comparable to or even higher than other LDHs. The assembled AC//CoMn-LDH hybrid supercapacitor device further demonstrated better stability with 63% original capacitance over 20,000 cycles. Later, as a catalyst, CoMn-LDH, CoMn@CuZnS, and CoMn@CuZnFeS electrodes revealed better performance, with overpotentials of 340, 350, and 366 and −199, −215, and −222 mV to attain 10 mA cm⁻² of current density for the oxygen evolution reaction (OER) and hydrogen evolution reaction (HER), respectively. Moreover, for CoMn-LDH, small Tafel slopes of 102 and 128 mV/dec were noticed for OER and HER with good stability compared to heterostructured electrodes. Full article

Converting carbon dioxide (CO₂) into solar fuels through photocatalysis represents an appealing approach to tackling the escalating energy crisis and mitigating the greenhouse effect. In this study, using melamine–formaldehyde (MF) nanospheres as a nitrogen source, a N element was simultaneously doped into the TiO₂ nanoparticle structure supported by carbon hollow spheres using a one-step carbonization method to form a heterojunction N-CHS@N-TiO₂ (marked as (N-(CHS@TiO₂)). The composite showed superior photocatalytic activity in reducing CO₂ compared with TiO₂ and N-CHS: after 6 h of visible light irradiation, the CO yield was 4.3 times that of N-CHS and TiO₂; 6 h of UV irradiation later, the CO yield reached 2.6 times that of TiO₂ and 7 times that of N-CHS. The substantial enhancement in photocatalytic activity was attributed to the nitrogen simultaneously doped carbon hollow spheres and TiO₂, mesoporous structure, small average TiO₂ crystal size, large surface areas, and the heterostructure formed by N-CHS and N-TiO₂. The UV-vis diffuse reflectance spectra (DRS) exhibit a significant improvement in light absorption, attributed to the visible-light-active carbon hollow sphere and the N element doping, thereby enhancing solar energy utilization. Full article

The GaN photoconductive semiconductor switches (PCSSs) with low leakage current and large on-state current are suitable for several applications, including fast switching and high-power electromagnetic pulse equipment. This paper demonstrates a high-power GaN lateral PCSS device. An output peak current of 142.2 A is reached with an input voltage of 10.28 kV when the GaN lateral PCSS is intrinsically triggered. In addition, the method of retaining the AlGaN/GaN heterostructure between electrodes on PCSSs is proposed, which results in increasing the output peak current of the PCSS. The damage mechanism of the PCSS caused by a high electric field and high excitation laser energy is analyzed. The obtained results show that the high heat generated by the large current leads to the decomposition of GaN, and thus, the Ga forms a metal conductive path, resulting in the failure of the device. Full article

In this work, we employ molecular dynamics simulations with semi-empirical interatomic potentials to explore heat dissipation in Janus transition metal dichalcogenides (JTMDs). The middle atomic layer is composed of either molybdenum (Mo) or tungsten (W) atoms, and the top and bottom atomic layers consist of sulfur (S) and selenium (Se) atoms, respectively. Various nanomaterials have been investigated, including both pristine JTMDs and nanostructures incorporating inner triangular regions with a composition distinct from the outer bulk material. At the beginning of our simulations, a temperature gradient across the system is imposed by heating the central region to a high temperature while the surrounding area remains at room temperature. Once a steady state is reached, characterized by a constant energy flux, the temperature control in the central region is switched off. The heat attenuation is investigated by monitoring the characteristic relaxation time (τ_av) of the local temperature at the central region toward thermal equilibrium. We find that SMoSe JTMDs exhibit thermal attenuation similar to conventional TMDs (τ_av~10–15 ps). On the contrary, SWSe JTMDs feature relaxation times up to two times as high (τ_av~14–28 ps). Forming triangular lateral heterostructures in their surfaces leads to a significant slowdown in heat attenuation by up to about an order of magnitude (τ_av~100 ps). Full article

Two-dimensional (2D) materials have drawn extensive attention due to their exceptional characteristics and potential uses in electronics and energy storage. This investigation employs simulations using molecular dynamics to examine the mechanical and thermal transport attributes of the 2D silicene–germanene (Si-Ge) lateral heterostructure. The pre-existing cracks of the Si-Ge lateral heterostructure are addressed with external strain. Then, the effect of vacancy defects and temperature on the mechanical attributes is also investigated. By manipulating temperature and incorporating vacancy defects and pre-fabricated cracks, the mechanical behaviors of the Si-Ge heterostructure can be significantly modulated. In order to investigate the heat transport performance of the Si-Ge lateral heterostructure, a non-equilibrium molecular dynamics approach is employed. The efficient phonon average free path is obtained as 136.09 nm and 194.34 nm, respectively, in the Si-Ge heterostructure with a zigzag and armchair interface. Our results present the design and application of thermal management devices based on the Si-Ge lateral heterostructure. Full article

The morphology and crystal structure of Pt films grown by pulsed laser deposition (PLD) on yttria-stabilized zirconia (YSZ)at high temperatures Tg = 900 °C was studied for four different film thicknesses varying between 10 and 70 nm. During the subsequent growth of the capping layer, the thermal stability of the Pt was strongly influenced by the Pt film’s thickness. Furthermore, these later affected the film morphology, the crystal structure and hillocks size, and distribution during subsequent growth at Tg = 900 °C for a long duration. The modifications in the morphology as well as in the structure of the Pt film without a capping layer, named also as the as-grown and encapsulated layers in the bilayer system, were examined by a combination of microscopic and scattering methods. The increase in the thickness of the deposited Pt film brought three competitive phenomena into occurrence, such as 3D–2D morphological transition, dewetting, and hillock formation. The degree of coverage, film continuity, and the crystal quality of the Pt film were significantly improved by increasing the deposition time. An optimum Pt film thickness of 70 nm was found to be suitable for obtaining a hillock-free Pt bottom electrode which also withstood the dewetting phenomena revealed during the subsequent growth of capping layers. This achievement is crucial for the deposition of functional bottom electrodes in ferroelectric and multiferroic heterostructure systems. Full article

A set of semiconductor lasers with different stripe widths is fabricated based on the AlGaInAs/InP heterostructure with an ultra-narrow waveguide. The key characteristics of the lasers (light-current curves (L-I), current-voltage curves (I-V), and spectral and spatial characteristics) are measured, and their dependence on the stripe width is shown. The operating optical power increases from 1.4 W to 4.3 W; however, the lateral brightness decreases from 1.09 W/(mm*mrad) to 0.65 W/(mm*mrad) as the stripe width increases from 20 to 150 μm. Full article

2H MoTe₂ (molybdenum ditelluride) has generated significant interest because of its superconducting, nonvolatile memory, and semiconducting of new materials, and it has a large range of electrical properties. The combination of transition metal dichalcogenides (TMDCs) and two dimensional (2D) materials like hexagonal boron nitride (h-BN) in lateral heterostructures offers a unique platform for designing and engineering novel electronic devices. We report the fabrication of highly conductive interfaces in crystalline ionic liquid-gated (ILG) field-effect transistors (FETs) consisting of a few layers of MoTe₂/h-BN heterojunctions. In our initial exploration of tellurium-based semiconducting TMDs, we directed our attention to MoTe₂ crystals with thicknesses exceeding 12 nm. Our primary focus centered on investigating the transport characteristics and quantitatively assessing the surface interface heterostructure. Our transconductance (g_m) measurements indicate that the very efficient carrier modulation with an ILG FET is two times larger than standard back gating, and it demonstrates unipolarity of the device. The ILG FET exhibited highly unipolar p-type behavior with a high on/off ratio, and it significantly increased the mobility in MoTe₂/h-BN heterochannels, achieving improvement as one of the highest recorded mobility increments. Specifically, we observed hole and electron mobility values ranging from 345 cm² V⁻¹ s⁻¹ to 285 cm² V⁻¹ s⁻¹ at 80 K. We predict that our ability to observe the intrinsic, heterointerface conduction in the channels was due to a drastic reduction of the Schottky barriers, and electrostatic gating is suggested as a method for controlling the phase transitions in the few layers of TMDC FETs. Moreover, the simultaneous structural phase transitions throughout the sample, achieved through electrostatic doping control, presents new opportunities for developing phase change devices using atomically thin membranes. Full article

Strain engineering is an effective way to adjust the sensing properties of two-dimensional materials. In this paper, lateral heterojunctions (LHSs) based on arsenic and antimony have been designed along the armchair (AC) or zigzag (ZZ) edges. The adsorption and sensing characteristics of As/Sb LHSs to NO₂ before and after applying different types of strain are calculated by first principles. The band gaps of all As/Sb heterostructures are contributed by As-p and Sb-p orbitals. In addition, the adsorption energy of As/Sb ZZ-LHS with −4% compression strain is the largest. Furthermore, its work function changes significantly before and after the adsorption of NO₂. Meanwhile, strong orbital hybridizations near the Fermi level are observed and a new state is yielded after applying compressive strain. These results indicate that the As/Sb LHS with ZZ interface under −4% compression strain possesses the best sensing properties to NO₂. This work lays the foundation for the fabrication of high-performance NO₂ gas sensors. High-performance gas sensors can be used to track and regulate NO₂ exposure and emission, as well as to track NO₂ concentrations in the atmosphere and support the assessment of air quality. Full article

Ordered thin films of Au nanorods (NRs) on Ti/Au/Si heterostructure substrates are electrodeposited in thin film aluminum oxide templates and, after template removal, serve as supports for Pd and Pt nanocatalysts. Based on previous work which showed a better electrocatalytic performance for layered Au/Pd nanostructures than monolithic Pd, electrodeposited 20 nm Pd discs on Au-NRs are first investigated in terms of their catalytic activity for the hydrogen evolution reaction (HER) and compared to monolithic 20 nm Pd and Pt discs. To further boost performance, the interfacial interaction area between the Au-NRs supports and the active metals (Pt and Pd) was increased via magnetron sputtering an extremely thin layer of Pt and Pd (20 nm overall sputtered thickness) on the Au-NRs after template removal. In this way, the whole NR surface (top and lateral) was covered with Pt and Pd nanoparticles, ensuring a maximum interfacial contact between the support and the active metal. The HER performance obtained was substantially higher than that of the other nanostructures. A Salient result of the present work, however, is the superior activity obtained for sputtered Pd on Au in comparison to that of sputtered Pt on Au. The results also show that increasing the Au-NR length translates in a strong increase in performance. Density functional theory calculations show that the interfacial electronic interactions between Au and Pd lead to suitable values of hydrogen adsorption energy on all possible sites, thus promoting faster (barrier-free diffusion) hydrogen adsorption and its recombination to H₂. A Volmer–Heyrovsky mechanism for HER is proposed, and a volcano plot is suggested based on the results of the Tafel plots and the calculated hydrogen adsorption energies. Full article

CdxTeyOz/CdS/ZnO heterostructures were obtained by the SILAR method using ionic electrolytes. A CdS film was formed as a buffer layer for better adhesion of the cadmium-tellurium oxides to the substrate surface. In turn, the ZnO substrate was previously prepared by electrochemical etching to form a rough textured surface. In addition, an annealing mode was used in an oxygen stream to complete the oxidation process of the heterostructure surface. The resulting nanocomposite was investigated using RAMAN, XRD, SEM, and EDX methods. We assume that the oxides CdO and TeO₄ initially form on the surface and later evolve into TeO₂ and TeO₃ when saturated with oxygen. These oxides, in turn, are the components of the ternary oxides CdTeO₃ and CdTe₃O₈. It should be noted that this mechanism has not been fully studied and requires further research. However, the results presented in this article make it possible to systematize the data and experimental observations regarding the formation of cadmium-tellurium films. Full article

A photodetector based on a hybrid dimensional heterostructure of laterally aligned multiwall carbon nanotubes (MWCNTs) and multilayered MoS₂ was prepared using the micro-nano fixed-point transfer technique. Thanks to the high mobility of carbon nanotubes and the efficient interband absorption of MoS₂, broadband detection from visible to near-infrared (520–1060 nm) was achieved. The test results demonstrate that the MWCNT-MoS2 heterostructure-based photodetector device exhibits an exceptional responsivity, detectivity, and external quantum efficiency. Specifically, the device demonstrated a responsivity of 3.67 × 10³ A/W (λ = 520 nm, V_ds = 1 V) and 718 A/W (λ = 1060 nm, V_ds = 1 V). Moreover, the detectivity (D*) of the device was found to be 1.2 × 10¹⁰ Jones (λ = 520 nm) and 1.5 × 10⁹ Jones (λ = 1060 nm), respectively. The device also demonstrated external quantum efficiency (EQE) values of approximately 8.77 × 10⁵% (λ = 520 nm) and 8.41 × 10⁴% (λ = 1060 nm). This work achieves visible and infrared detection based on mixed-dimensional heterostructures and provides a new option for optoelectronic devices based on low-dimensional materials. Full article