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Keywords = microelectromechanical systems (MEMS) packaging

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39 pages, 9552 KB  
Review
Recent Progress of Structural Design, Fabrication Processes, and Applications of Flexible Acceleration Sensors
by Yuting Wang, Zhidi Chen, Peng Chen, Jie Mei, Jiayue Kuang, Chang Li, Zhijun Zhou and Xiaobo Long
Sensors 2026, 26(8), 2499; https://doi.org/10.3390/s26082499 - 17 Apr 2026
Viewed by 460
Abstract
Flexible acceleration sensors demonstrate revolutionary potential in healthcare, structural vibration monitoring, and consumer electronics owing to their unique conformal adhesion capability and mechanical adaptability. However, current academic research presents two distinct paradigms for realizing flexibility: one is the hybridly flexible sensor, which incorporates [...] Read more.
Flexible acceleration sensors demonstrate revolutionary potential in healthcare, structural vibration monitoring, and consumer electronics owing to their unique conformal adhesion capability and mechanical adaptability. However, current academic research presents two distinct paradigms for realizing flexibility: one is the hybridly flexible sensor, which incorporates traditional micro-electro-mechanical System (MEMS) acceleration sensor chips with flexible packaging/substrates; the other is the intrinsically flexible sensor, whose sensing unit and substrate are entirely composed of flexible materials enabled by microstructural design. This review first analyzes the fundamental differences and design challenges between these two flexible architectures. It then systematically elucidates five core sensing mechanisms—capacitive, piezoresistive, triboelectric, piezoelectric, and electromagnetic—comparing their working principles, material systems, structural designs, and performance metrics. Among these, piezoelectric and triboelectric types exhibit distinctive advantages in self-powering capability, whereas resistive and capacitive approaches offer greater ease of integration. Furthermore, the applications of intrinsically flexible acceleration sensors in structural health monitoring, wearable devices, automotive safety, and other fields are discussed, with particular emphasis on their unique strengths in real-time vibration monitoring. Finally, the review summarizes existing challenges, such as the trade-off between sensitivity and flexibility, and provides theoretical insights to guide future innovations in intrinsically flexible acceleration sensor technology. Full article
(This article belongs to the Special Issue 2D Materials for Advanced Sensing Technology)
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18 pages, 23292 KB  
Article
SOI-Structured Piezoresistive Pressure Sensor with Integration of Temperature Sensor for Downhole Applications
by José Mireles Jr., Abimael Jiménez and Ángel Sauceda
Sensors 2026, 26(7), 2076; https://doi.org/10.3390/s26072076 - 26 Mar 2026
Viewed by 2016
Abstract
Micro-electro-mechanical systems (MEMS) sensors offer the benefits of compact size, lightweight design, and low cost, which has led to widespread use in consumer electronics, vehicles, healthcare, defense, and communications. As their performance has improved, MEMS sensors have also found applications in oil exploration [...] Read more.
Micro-electro-mechanical systems (MEMS) sensors offer the benefits of compact size, lightweight design, and low cost, which has led to widespread use in consumer electronics, vehicles, healthcare, defense, and communications. As their performance has improved, MEMS sensors have also found applications in oil exploration and geophysical studies. Pressure and temperature measurements during hydraulic fracturing have long been employed to improve downhole conductivity during oil and gas extraction. Nevertheless, the development of high-precision MEMS sensors for oil exploration remains an active area of research. This paper presents the design, fabrication, packaging, and characterization of a silicon-on-insulator (SOI) MEMS piezoresistive pressure sensor integrated with a temperature sensor. It also describes the design of a chamber intended to emulate conditions at the bottom of oil exploration wells. The sensors were successfully designed and fabricated on the basis of physics-based simulations, deep reactive ion etching and anodic bonding. The pressure sensors, together with the signal-conditioning system, exhibited a linear response with a sensitivity of 0.0268 mV/V/MPa and maximum hysteresis of 5.3%. Full article
(This article belongs to the Section Physical Sensors)
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17 pages, 4195 KB  
Article
Design and Implementation of a Low-Noise Analog Front-End Circuit for MEMS Capacitive Accelerometers
by Keru Gong, Jiacheng Li, Xiaoyi Wang, Huiliang Cao and Huikai Xie
Micromachines 2026, 17(3), 378; https://doi.org/10.3390/mi17030378 - 20 Mar 2026
Viewed by 596
Abstract
This paper presents a low-noise analog front-end (AFE) integrated circuit (IC) circuit for capacitive micro-electromechanical system (MEMS) accelerometers that can be used for optical image stabilization (OIS) in various optical imaging systems. The AFE circuit design features a fully differential chopper stabilization technique [...] Read more.
This paper presents a low-noise analog front-end (AFE) integrated circuit (IC) circuit for capacitive micro-electromechanical system (MEMS) accelerometers that can be used for optical image stabilization (OIS) in various optical imaging systems. The AFE circuit design features a fully differential chopper stabilization technique that efficiently minimizes low-frequency 1/f noise and parasitic coupling. The AFE circuit chip is fabricated in a 0.18 μm complementary metal-oxide-semiconductor (CMOS) technology and co-packaged with an x-axis capacitive MEMS accelerometer based on a silicon-on-glass (SOG) process. The SOG accelerometer has a footprint of 1000 μm × 950 μm. The packaged system demonstrates a sensitivity of 342 mV/g and a nonlinearity of 1.1% between −1 g and +1 g, a dynamic range of 88 dB, and an equivalent noise floor of 14 μg/Hz. Full article
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11 pages, 2292 KB  
Article
Experimental Study on Laser-Controlled Explosive Welding of Microscale Metallic Foils Driven by Energetic Materials
by Xiaojun Ye, Dongxian Ye, Yanshu Fu, Penglong Zhao, Xianfeng Xiao, Daomin Shi and Rui Zhang
Materials 2026, 19(3), 527; https://doi.org/10.3390/ma19030527 - 28 Jan 2026
Viewed by 871
Abstract
In response to the challenge of achieving highly reliable interface fabrication in the fields of microelectronics and micro-electromechanical system (MEMS) packaging, this study harnesses the superior characteristics of solid-state bonding inherent in explosive welding (EXW) technology. This study investigates the precise EXW of [...] Read more.
In response to the challenge of achieving highly reliable interface fabrication in the fields of microelectronics and micro-electromechanical system (MEMS) packaging, this study harnesses the superior characteristics of solid-state bonding inherent in explosive welding (EXW) technology. This study investigates the precise EXW of milligram-scale metallic foils by employing focused laser energy to control the explosion behavior of liquid energetic materials, thereby generating shockwaves that induce high-velocity oblique collisions between metallic foils and base plates. Laser-focused energy was utilized to regulate energetic materials for conducting precision EXW experiments on Al/Cu couples. The technical feasibility and interfacial quality of this method for fabricating Al/Cu bonding interfaces were systematically evaluated through in situ observation of the dynamic welding process, comprehensive analysis of interfacial microstructures, and numerical simulations. The results reveal distinct Al/Cu elemental diffusion at the bonding interface, confirming the technical viability of the approach. However, an unloading rebound phenomenon is observed at the interface, which is inherently associated with the dynamic impact process, indicating the need for further optimization in the precise control of impact loading. Full article
(This article belongs to the Section Metals and Alloys)
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29 pages, 9470 KB  
Review
Millimeter-Wave Antennas for 5G Wireless Communications: Technologies, Challenges, and Future Trends
by Yutao Yang, Minmin Mao, Junran Xu, Huan Liu, Jianhua Wang and Kaixin Song
Sensors 2025, 25(17), 5424; https://doi.org/10.3390/s25175424 - 2 Sep 2025
Cited by 15 | Viewed by 9528
Abstract
With the rapid evolution of 5G wireless communications, millimeter-wave (mmWave) technology has become a crucial enabler for high-speed, low-latency, and large-scale connectivity. As the critical interface for signal transmission, mmWave antennas directly affect system performance, reliability, and application scope. This paper reviews the [...] Read more.
With the rapid evolution of 5G wireless communications, millimeter-wave (mmWave) technology has become a crucial enabler for high-speed, low-latency, and large-scale connectivity. As the critical interface for signal transmission, mmWave antennas directly affect system performance, reliability, and application scope. This paper reviews the current state of mmWave antenna technologies in 5G systems, focusing on antenna types, design considerations, and integration strategies. We discuss how the multiple-input multiple-output (MIMO) architectures and advanced beamforming techniques enhance system capacity and link robustness. State-of-the-art integration methods, such as antenna-in-package (AiP) and chip-level integration, are examined for their importance in achieving compact and high-performance mmWave systems. Material selection and fabrication technologies—including low-loss substrates like polytetrafluoroethylene (PTFE), hydrocarbon-based materials, liquid crystal polymer (LCP), and microwave dielectric ceramics, as well as emerging processes such as low-temperature co-fired ceramics (LTCC), 3D printing, and micro-electro-mechanical systems (MEMS)—are also analyzed. Key challenges include propagation path limitations, power consumption and thermal management in highly integrated systems, cost–performance trade-offs for mass production, and interoperability standardization across vendors. Finally, we outline future research directions, including intelligent beam management, reconfigurable antennas, AI-driven designs, and hybrid mmWave–sub-6 GHz systems, highlighting the vital role of mmWave antennas in shaping next-generation wireless networks. Full article
(This article belongs to the Special Issue Millimeter-Wave Antennas for 5G)
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29 pages, 12480 KB  
Review
Advances of Welding Technology of Glass for Electrical Applications
by Dejun Yan, Lili Ma, Jiaqi Lu, Dasen Wang and Xiaopeng Li
Materials 2025, 18(17), 4096; https://doi.org/10.3390/ma18174096 - 1 Sep 2025
Cited by 3 | Viewed by 5054 | Correction
Abstract
Glass, as an amorphous material with excellent optical transparency and chemical stability, plays an irreplaceable role in modern engineering and technology fields such as semiconductor manufacturing and micro-electro-mechanical systems (MEMS). For example, borosilicate glass, with a coefficient of thermal expansion (CTE) that is [...] Read more.
Glass, as an amorphous material with excellent optical transparency and chemical stability, plays an irreplaceable role in modern engineering and technology fields such as semiconductor manufacturing and micro-electro-mechanical systems (MEMS). For example, borosilicate glass, with a coefficient of thermal expansion (CTE) that is close to having good thermal shock resistance and chemical stability, can be applied to MEMS packaging and aerospace fields. SiO2 glass exhibits excellent thermal stability, extremely low optical absorption, and high light transmittance, while also possessing strong chemical stability and extremely low dielectric loss. It is widely used in semiconductors, photolithography, and micro-optical devices. However, the stress sensitivity of traditional mechanical joints and the poor weather resistance of adhesive bonding make conventional methods unsuitable for glass joining. Welding technology, with its advantages of high joint strength, structural integrity, and scalability for mass production, has emerged as a key approach for precision glass joining. In the field of glass welding, technologies such as glass brazing, ultrasonic welding, anodic bonding, and laser welding are being widely studied and applied. With the advancement of laser technology, laser welding has emerged as a key solution to overcoming the bottlenecks of conventional processes. This paper, along with the application cases for these technologies, includes an in-depth study of common issues in glass welding, such as residual stress management and interface compatibility design, as well as prospects for the future development of glass welding technology. Full article
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23 pages, 4929 KB  
Article
Low Phase Noise, Dual-Frequency Pierce MEMS Oscillators with Direct Print Additively Manufactured Amplifier Circuits
by Liguan Li, Di Lan, Xu Han, Tinghung Liu, Julio Dewdney, Adnan Zaman, Ugur Guneroglu, Carlos Molina Martinez and Jing Wang
Micromachines 2025, 16(7), 755; https://doi.org/10.3390/mi16070755 - 26 Jun 2025
Cited by 3 | Viewed by 2387
Abstract
This paper presents the first demonstration and comparison of two identical oscillator circuits employing piezoelectric zinc oxide (ZnO) microelectromechanical systems (MEMS) resonators, implemented on conventional printed-circuit-board (PCB) and three-dimensional (3D)-printed acrylonitrile butadiene styrene (ABS) substrates. Both oscillators operate simultaneously at dual frequencies (260 [...] Read more.
This paper presents the first demonstration and comparison of two identical oscillator circuits employing piezoelectric zinc oxide (ZnO) microelectromechanical systems (MEMS) resonators, implemented on conventional printed-circuit-board (PCB) and three-dimensional (3D)-printed acrylonitrile butadiene styrene (ABS) substrates. Both oscillators operate simultaneously at dual frequencies (260 MHz and 437 MHz) without the need for additional circuitry. The MEMS resonators, fabricated on silicon-on-insulator (SOI) wafers, exhibit high-quality factors (Q), ensuring superior phase noise performance. Experimental results indicate that the oscillator packaged using 3D-printed chip-carrier assembly achieves a 2–3 dB improvement in phase noise compared to the PCB-based oscillator, attributed to the ABS substrate’s lower dielectric loss and reduced parasitic effects at radio frequency (RF). Specifically, phase noise values between −84 and −77 dBc/Hz at 1 kHz offset and a noise floor of −163 dBc/Hz at far-from-carrier offset were achieved. Additionally, the 3D-printed ABS-based oscillator delivers notably higher output power (4.575 dBm at 260 MHz and 0.147 dBm at 437 MHz). To facilitate modular characterization, advanced packaging techniques leveraging precise 3D-printed encapsulation with sub-100 μm lateral interconnects were employed. These ensured robust packaging integrity without compromising oscillator performance. Furthermore, a comparison between two transistor technologies—a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) and an enhancement-mode pseudomorphic high-electron-mobility transistor (E-pHEMT)—demonstrated that SiGe HBT transistors provide superior phase noise characteristics at close-to-carrier offset frequencies, with a significant 11 dB improvement observed at 1 kHz offset. These results highlight the promising potential of 3D-printed chip-carrier packaging techniques in high-performance MEMS oscillator applications. Full article
(This article belongs to the Section E:Engineering and Technology)
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23 pages, 1475 KB  
Article
Learning Online MEMS Calibration with Time-Varying and Memory-Efficient Gaussian Neural Topologies
by Danilo Pietro Pau, Simone Tognocchi and Marco Marcon
Sensors 2025, 25(12), 3679; https://doi.org/10.3390/s25123679 - 12 Jun 2025
Cited by 4 | Viewed by 5083
Abstract
This work devised an on-device learning approach to self-calibrate Micro-Electro-Mechanical Systems-based Inertial Measurement Units (MEMS-IMUs), integrating a digital signal processor (DSP), an accelerometer, and a gyroscope in the same package. The accelerometer and gyroscope stream their data in real time to the DSP, [...] Read more.
This work devised an on-device learning approach to self-calibrate Micro-Electro-Mechanical Systems-based Inertial Measurement Units (MEMS-IMUs), integrating a digital signal processor (DSP), an accelerometer, and a gyroscope in the same package. The accelerometer and gyroscope stream their data in real time to the DSP, which runs artificial intelligence (AI) workloads. The real-time sensor data are subject to errors, such as time-varying bias and thermal stress. To compensate for these drifts, the traditional calibration method based on a linear model is applicable, and unfortunately, it does not work with nonlinear errors. The algorithm devised by this study to reduce such errors adopts Radial Basis Function Neural Networks (RBF-NNs). This method does not rely on the classical adoption of the backpropagation algorithm. Due to its low complexity, it is deployable using kibyte memory and in software runs on the DSP, thus performing interleaved in-sensor learning and inference by itself. This avoids using any off-package computing processor. The learning process is performed periodically to achieve consistent sensor recalibration over time. The devised solution was implemented in both 32-bit floating-point data representation and 16-bit quantized integer version. Both of these were deployed into the Intelligent Sensor Processing Unit (ISPU), integrated into the LSM6DSO16IS Inertial Measurement Unit (IMU), which is a programmable 5–10 MHz DSP on which the programmer can compile and execute AI models. It integrates 32 KiB of program RAM and 8 KiB of data RAM. No permanent memory is integrated into the package. The two (fp32 and int16) RBF-NN models occupied less than 21 KiB out of the 40 available, working in real-time and independently in the sensor package. The models, respectively, compensated between 46% and 95% of the accelerometer measurement error and between 32% and 88% of the gyroscope measurement error. Finally, it has also been used for attitude estimation of a micro aerial vehicle (MAV), achieving an error of only 2.84°. Full article
(This article belongs to the Special Issue Sensors and IoT Technologies for the Smart Industry)
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10 pages, 3090 KB  
Article
A Method for Fabricating Cavity-SOI and Its Verification Using Resonant Pressure Sensors
by Han Xue, Xingyu Li, Yulan Lu, Bo Xie, Deyong Chen, Junbo Wang and Jian Chen
Micromachines 2025, 16(3), 297; https://doi.org/10.3390/mi16030297 - 28 Feb 2025
Cited by 5 | Viewed by 2176
Abstract
Cavity silicon on insulator (Cavity-SOI) offers significant design flexibility for microelectromechanical systems (MEMS). Notably, the shape and depth of the cavity can be tailored to specific requirements, facilitating the realization of intricate multi-layer structural designs. The novelty of the proposed fabrication methodology is [...] Read more.
Cavity silicon on insulator (Cavity-SOI) offers significant design flexibility for microelectromechanical systems (MEMS). Notably, the shape and depth of the cavity can be tailored to specific requirements, facilitating the realization of intricate multi-layer structural designs. The novelty of the proposed fabrication methodology is manifested in its employment of a micromachining process flow, which integrates dry etching, wafer level Au–Si eutectic bonding, and chemical mechanical polishing (CMP) to create Cavity-SOI. This innovative approach substantially mitigates the complexity of fabrication, and the implementation of wafer-level gold–silicon eutectic bonding and vacuum packaging can be achieved, representing a distinct advantage over conventional methods. To evaluate the technical viability, a MEMS resonant pressure sensor (RPS) was designed. Experimental findings demonstrate that during the formation of Cavity-SOI, dry etching can accurately fabricate cavities of predefined dimensions, wafer-level Au–Si eutectic bonding can achieve efficient sealing, and CMP can precisely regulate the depth of cavities, thus validating the feasibility of the Cavity-SOI formation process. Additionally, when implementing Cavity-SOI in the fabrication of MEMS RPS, it enables the spontaneous release of resonators, effectively circumventing the undercut and adhesion issues commonly encountered with hydrofluoric acid (HF) release. The sensors fabricated using Cavity-SOI exhibit a sensitivity of 100.695 Hz/kPa, a working temperature range spanning from −10–60 °C, a pressure range of 1–120 kPa, and a maximum error of less than 0.012% full scale (FS). The developed micromachining process for Cavity-SOI not only streamlines the fabrication process but also addresses several challenges inherent in traditional MEMS fabrication. The successful fabrication and performance validation of the MEMS RPS confirm the effectiveness and practicality of the proposed method. This breakthrough paves the way for the development of high-performance MEMS devices, opening up new possibilities for various applications in different industries. Full article
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15 pages, 7450 KB  
Article
A Wafer-Level Fabricated Heating–Vacuum Micro-Platform with Resonant MEMS Monolithically Integrated
by Kaixuan He, Rui Feng, Yu Zheng, Lijian Guo, Qichao Liao, Dongfang Song, Yuan Xiang and Xinxin Li
Micromachines 2025, 16(2), 214; https://doi.org/10.3390/mi16020214 - 13 Feb 2025
Viewed by 2228
Abstract
This paper presents a silicon-based wafer-level vacuum packaging platform with a monolithically integrated micro-oven. This system provides vacuum and constant temperature operating conditions to improve the performance of resonant micro-electro-mechanical systems (MEMS) devices. Based on a three-layer wafer-level vacuum packaging process, the platform [...] Read more.
This paper presents a silicon-based wafer-level vacuum packaging platform with a monolithically integrated micro-oven. This system provides vacuum and constant temperature operating conditions to improve the performance of resonant micro-electro-mechanical systems (MEMS) devices. Based on a three-layer wafer-level vacuum packaging process, the platform integrates a silicon thermistor, a thermal isolation structure, and a heater with the addition of a mask and an additional silicon wafer. This wafer-level vacuum-packaging platform achieved a vacuum level of approximately 6 mTorr. Due to the micro-oven, the temperature coefficient of the resonant frequency for the MEMS resonator was reduced by 48 times, and the temperature coefficient of the quality factor was reduced 19 times within the temperature range of −40 °C to 80 °C. The heater of the micro-oven consumed about 364 mW of power when the ambient temperature was −40 °C and the temperature controlled by the micro-oven was 100 °C. This method enables the wafer-level integration of the thermistor, thermal isolation structure, heater, and vacuum-packaged resonator, offering advantages such as low cost, efficient batch production, and high performance. Full article
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14 pages, 7150 KB  
Article
The Effect of Metal Shielding Layer on Electrostatic Attraction Issue in Glass–Silicon Anodic Bonding
by Wenqi Yang, Yong Ruan and Zhiqiang Song
Micromachines 2025, 16(1), 31; https://doi.org/10.3390/mi16010031 - 28 Dec 2024
Cited by 1 | Viewed by 4904
Abstract
Silicon–glass anode bonding is the key technology in the process of wafer-level packaging for MEMS sensors. During the anodic bonding process, the device may experience adhesion failure due to the influence of electric field forces. A common solution is to add a metal [...] Read more.
Silicon–glass anode bonding is the key technology in the process of wafer-level packaging for MEMS sensors. During the anodic bonding process, the device may experience adhesion failure due to the influence of electric field forces. A common solution is to add a metal shielding layer between the glass substrate and the device. In order to solve the problem of device failure caused by the electrostatic attraction phenomenon, this paper designed a double-ended solidly supported cantilever beam parallel plate capacitor structure, focusing on the study of the critical size of the window opening in the metal layer for the electric field shielding effect. The metal shield consists of 400 Å of Cr and 3400 Å of Au. Based on theoretical calculations, simulation analysis, and experimental testing, it was determined that the critical size for an individual opening in the metal layer is 180 μm × 180 μm, with the movable part positioned 5 μm from the bottom, which does not lead to failure caused by stiction due to electrostatic pull-in of the detection structure. It was proven that the metal shielding layer is effective in avoiding suction problems in secondary anode bonding. Full article
(This article belongs to the Special Issue Recent Advances in Silicon-Based MEMS Sensors and Actuators)
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26 pages, 1397 KB  
Article
Inertial Measurement Unit Self-Calibration by Quantization-Aware and Memory-Parsimonious Neural Networks
by Matteo Cardoni, Danilo Pietro Pau, Kiarash Rezaei and Camilla Mura
Electronics 2024, 13(21), 4278; https://doi.org/10.3390/electronics13214278 - 31 Oct 2024
Cited by 4 | Viewed by 5429
Abstract
This paper introduces a methodology to compensate inertial Micro-Electro-Mechanical System (IMU-MEMS) time-varying calibration loss, induced by stress and aging. The approach relies on a periodic assessment of the sensor through specific stimuli, producing outputs which are compared with the response of a high-precision [...] Read more.
This paper introduces a methodology to compensate inertial Micro-Electro-Mechanical System (IMU-MEMS) time-varying calibration loss, induced by stress and aging. The approach relies on a periodic assessment of the sensor through specific stimuli, producing outputs which are compared with the response of a high-precision sensor, used as ground truth. At any re-calibration iteration, differences with respect to the ground truth are approximated by quantization-aware trained tiny neural networks, allowing calibration-loss compensations. Due to the unavailability of aging IMU-MEMS datasets, a synthetic dataset has been produced, taking into account aging effects with both linear and nonlinear calibration loss. Also, field-collected data in conditions of thermal stress have been used. A model relying on Dense and 1D Convolution layers was devised and compensated for an average of 1.97 g and a variance of 1.07 g2, with only 903 represented with 16 bit parameters. The proposed model can be executed on an intelligent signal processing inertial sensor in 126.4 ms. This work represents a step forward toward in-sensor machine learning computing through integrating the computing capabilities into the sensor package that hosts the accelerometer and gyroscope sensing elements. Full article
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16 pages, 16370 KB  
Article
Research on Multiphysics-Driven MEMS Safety and Arming Devices
by Xinyu Fan, Tengjiang Hu, Yifei Wang, Yulong Zhao, Zhongwang Tian and Wei Xue
Micromachines 2024, 15(10), 1194; https://doi.org/10.3390/mi15101194 - 26 Sep 2024
Cited by 4 | Viewed by 5319
Abstract
As the core component of energy transfer in weapon system, safety and arming (S&A) devices affect the safety, reliability, and damage ability of the weapon. Micro-electromechanical systems (MEMS) S&A devices have been widely investigated for their smaller structure size, higher functional integration, and [...] Read more.
As the core component of energy transfer in weapon system, safety and arming (S&A) devices affect the safety, reliability, and damage ability of the weapon. Micro-electromechanical systems (MEMS) S&A devices have been widely investigated for their smaller structure size, higher functional integration, and better smart functionality. This paper proposes the design of a multi-physics field-driven MEMS S&A device. The S&A mechanism is composed of a setback mechanism, a spin mechanism, and an electrothermal mechanism, achieving multiphysics-arming. With the coordination of the three mechanisms, the S&A device can produce a 1 mm displacement. The displacement generated allows the S&A device to switch between safety status and arming status. The unlock conditions and overload resistance of each mechanism are obtained by finite element simulation. Based on SOI wafers and silicon oxide wafers, the chips were fabricated and packaged. Several tests were carried out to verify the working condition and overload resistance of the S&A device. The result shows that under a voltage of 11 V and a rotation speed of 8000 r/min, with a size no more than 10 mm × 10 mm × 1.5 mm, the device works smoothly and can withstand an overload of 25,000 g. Full article
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30 pages, 6129 KB  
Review
Comprehensive Review of RF MEMS Switches in Satellite Communications
by Bingqian Shao, Chengjian Lu, Yinjie Xiang, Feixiong Li and Mingxin Song
Sensors 2024, 24(10), 3135; https://doi.org/10.3390/s24103135 - 15 May 2024
Cited by 39 | Viewed by 9559
Abstract
The miniaturization and low power consumption characteristics of RF MEMS (Radio Frequency Microelectromechanical System) switches provide new possibilities for the development of microsatellites and nanosatellites, which will play an increasingly important role in future space missions. This paper provides a comprehensive review of [...] Read more.
The miniaturization and low power consumption characteristics of RF MEMS (Radio Frequency Microelectromechanical System) switches provide new possibilities for the development of microsatellites and nanosatellites, which will play an increasingly important role in future space missions. This paper provides a comprehensive review of RF MEMS switches in satellite communication, detailing their working mechanisms, performance optimization strategies, and applications in reconfigurable antennas. It explores various driving mechanisms (electrostatic, piezoelectric, electromagnetic, thermoelectric) and contact mechanisms (capacitive, ohmic), highlighting their advantages, challenges, and advancements. The paper emphasizes strategies to enhance switch reliability and RF performance, including minimizing the impact of shocks, reducing driving voltage, improving contacts, and appropriate packaging. Finally, it discusses the enormous potential of RF MEMS switches in future satellite communications, addressing their technical advantages, challenges, and the necessity for further research to optimize design and manufacturing for broader applications and increased efficiency in space missions. The research findings of this review can serve as a reference for further design and improvement of RF MEMS switches, which are expected to play a more important role in future aerospace communication systems. Full article
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15 pages, 5398 KB  
Article
Fabrication and Characterization of Monolithic Integrated Three-Axis Acceleration/Pressure/Magnetic Field Sensors
by Ying Wang, Yu Xiao, Xiaofeng Zhao and Dianzhong Wen
Micromachines 2024, 15(3), 412; https://doi.org/10.3390/mi15030412 - 19 Mar 2024
Cited by 6 | Viewed by 2603
Abstract
In order to realize the measurement of three-axis acceleration, pressure, and magnetic field, monolithic integrated three-axis acceleration/pressure/magnetic field sensors are proposed in this paper. The proposed sensors were constructed with an acceleration sensor consisting of four L-shaped double beams, two masses, middle double-beams, [...] Read more.
In order to realize the measurement of three-axis acceleration, pressure, and magnetic field, monolithic integrated three-axis acceleration/pressure/magnetic field sensors are proposed in this paper. The proposed sensors were constructed with an acceleration sensor consisting of four L-shaped double beams, two masses, middle double-beams, and twelve piezoresistors, a pressure sensor made of a square silicon membrane, and four piezoresistors, as well as a magnetic field sensor composed of five Hall elements. COMSOL software and TCAD-Atlas software were used to simulate characteristics of integrated sensors, and analyze the working principles of the sensors in measuring acceleration, pressure, and magnetic field. The integrated sensors were fabricated by using micro-electro-mechanical systems (MEMS) technology and packaged by using inner lead bonding technology. When applying a working voltage of 5 V at room temperature, it is possible for the proposed sensors to achieve the acceleration sensitivities of 3.58 mV/g, 2.68 mV/g, and 9.45 mV/g along the x-axis, y-axis, and z-axis (through an amplifying circuit), and the sensitivities towards pressure and magnetic field are 0.28 mV/kPa and 22.44 mV/T, respectively. It is shown that the proposed sensors can measure three-axis acceleration, pressure, and magnetic field. Full article
(This article belongs to the Special Issue Multifunctional-Nanomaterials-Based Semiconductor Devices and Sensors)
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