Search Results (168)

In this work, diamond/Si heterojunctions were fabricated by synthesizing a diamond layer directly on a monocrystalline n-type Si substrate. The diamond layers were characterized using micro-Raman spectroscopy, scanning electron microscopy (SEM), and X-ray diffraction (XRD). The current–voltage (I–V) characteristics of the heterojunctions were measured at room temperature. The heterojunctions exhibited rectifying behavior, confirming their diode-like nature. Based on thermionic emission theory, key electrical parameters of the heterojunction diodes—including the ideality factor (n) and carrier mobility (μ)—were estimated from the I–V characteristics. The I–V curves revealed large ideality factors ranging from 1.5 to 6.5, indicating the presence of deep trap states with densities between 2 × 10¹⁵ and 8 × 10¹⁶ eV⁻¹·cm⁻³. These variations were attributed to differences in the structural quality of the diamond layers and the effects of surface hydrogen termination. Full article

The use of molybdenum-based alloys as materials for components operating under high temperatures and significant mechanical loads is widely recognized due to their excellent mechanical properties. However, their low high-temperature resistance remains a critical limitation, which can be effectively mitigated by applying protective coatings. In this study, we investigate the influence of a two-step coating process on the properties and performance of the TZM molybdenum alloy. In the first step, pack cementation was performed. Simultaneous surface saturation with aluminum and silicon, a process known as aluminosiliconizing, was conducted at 1000 °C for 6 h. The saturating mixture comprised powders of aluminum, silicon, aluminum oxide, and ammonium chloride. The second step involved the application of a pre-ceramic coating based on polyhydrosiloxane modified with silicon and boron. This treatment effectively eliminated pores and cracks within the coating. Thermodynamic calculations were carried out to evaluate the likelihood of aluminizing and siliconizing reactions under the applied conditions. Aluminosiliconizing of the TZM alloy resulted in the formation of a protective layer 20–30 µm thick. The multiphase structure of this layer included intermetallics (Al₆₃Mo₃₇, MoAl₃), nitrides (Mo₂N, AlN, Si₃N₄), oxide (Al₂O₃), and a solid solution α-Mo(Al). Subsequent treatment with silicon- and boron-modified polyhydrosiloxane led to the development of a thicker surface layer, 130–160 µm in thickness, composed of crystalline Si, amorphous SiO₂, and likely amorphous boron. A transitional oxide layer ((Al,Si)₂O₃) 5–7 µm thick was also observed. The resulting coating demonstrated excellent structural integrity and chemical inertness in an argon atmosphere at temperatures up to 1100 °C. High-temperature stability at 800 °C was observed for both coating types: aluminosiliconizing, and aluminosiliconizing followed by the pre-ceramic coating. Moreover, additional oxide layers of SiO₂ and B₂O₃ formed on the two-step coated TZM alloy during heating at 800 °C for 24 h. These layers acted as an effective barrier, preventing the evaporation of the substrate material. Full article

In this study, high-conductivity W-doped Ga₂O₃ thin films were successfully fabricated by directly depositing a composition of Ga₂O₃ with 10.7 at% WO₃ (W:Ga = 12:100) using electron beam evaporation. The resulting thin films were found to be amorphous. Due to the ohmic contact behavior observed between the W-doped Ga₂O₃ film and platinum (Pt), Pt was used as the contact electrode. Current-voltage (J-V) measurements of the W-doped Ga₂O₃ thin films demonstrated that the samples exhibited significant current density even without any post-deposition annealing treatment. To further validate the excellent charge transport characteristics, Hall effect measurements were conducted. Compared to undoped Ga₂O₃ thin films, which showed non-conductive characteristics, the W-doped thin films showed an increased carrier concentration and enhanced electron mobility, along with a substantial decrease in resistivity. The measured Hall coefficient of the W-doped Ga₂O₃ thin films was negative, indicating that these thin films were n-type semiconductors. Energy-Dispersive X-ray Spectroscopy was employed to verify the elemental ratios of Ga, O, and W in the W-doped Ga₂O₃ thin films, while X-ray photoelectron spectroscopy analysis further confirmed these ratios and demonstrated their variation with the depth of the deposited thin films. Furthermore, the W-doped Ga₂O₃ thin films were deposited onto both p-type and heavily doped p⁺-type silicon (Si) substrates to fabricate heterojunction diodes. All resulting devices exhibited good rectifying behavior, highlighting the promising potential of W-doped Ga₂O₃ thin films for use in rectifying electronic components. Full article

In this study, we investigate the improvement of physical and electrical characteristics in 4H-silicon carbide (SiC) MOS capacitors using Aluminum Oxynitride (AlON) thin films fabricated via Plasma-Enhanced Atomic Layer Deposition (PEALD). AlON thin films are grown on SiC substrates using a high ratio of NH₃ and O₂ as nitrogen and oxygen sources through PEALD technology, with improved material properties and electrical performance. The AlON films exhibited excellent thickness uniformity, with a minimal error of only 0.14%, a high refractive index of 1.90, and a low surface roughness of 0.912 nm, demonstrating the precision of the PEALD process. Through XPS depth profiling and electrical characterization, it was found that the AlON/SiC interface showed a smooth transition from Al-N and Al-O at the surface to Al-O-Si at the interface, ensuring robust bonding. Electrical measurements indicated that the SiC/AlON MOS capacitors demonstrated Type I band alignment with a valence band offset of 1.68 eV and a conduction band offset of 1.16 eV. Additionally, the device demonstrated a low interface state density (D_it) of 7.6 × 10¹¹ cm⁻²·eV⁻¹ with a high breakdown field strength of 10.4 MV/cm. The results highlight AlON’s potential for enhancing the performance of high-voltage, high-power SiC devices. Full article

Trap states in 2D transition metal dichalcogenides significantly affect the responsivity and response time of photodetectors, and previous ReS₂/Si-based heterojunction photodetectors have struggled to simultaneously achieve high responsivity and fast response. To address this issue, we developed a n-type ReS₂/p-type Si heterojunction photodetector through interface engineering. Specifically, the silicon substrate with a silicon dioxide dielectric layer was treated with inductively coupled soft plasma to adjust the thickness and surface states of the dielectric layer. This treatment created a multilayered heterostructure, which increased carrier concentration, effectively passivated sulfur-vacancy-induced defects, and thereby improved responsivity. Experimental results showed that the silicon-based n-type ReS₂ photodetector achieved a responsivity of 0.88 A W⁻¹ with a rapid response rise time of 2.5 s, a significant improvement from the intrinsic values of 12 mA W⁻¹ responsivity and 6 s rise time. Additionally, due to the defect-tunable nature of this pretreatment technique, the device exhibited enhanced Raman peaks and intensified photoluminescence (PL) absorption features, confirming the effectiveness of the interface engineering in optimizing device performance. Full article

In this study, tin oxide (SnO₂) resistive random-access memory (RRAM) thin films were fabricated using the thermal evaporation and radiofrequency and dc frequency sputtering techniques for metal–insulator–metal (MIM) structures. The fabrication process began with the deposition of a silicon dioxide (SiO₂) layer onto a silicon (Si) substrate, followed by the deposition of a titanium nitride (TiN) layer to serve as the bottom electrode. Subsequently, the tin oxide (SnO₂) layer was deposited as the resistive switching insulator. Two types of top electrodes were developed to investigate the influence of different oxygen concentrations on the bipolar switching, electrical characteristics, and performance of memory devices. An aluminum (Al) top electrode was deposited using thermal evaporation, while a platinum (Pt) top electrode was deposited via dc sputtering. As a result, two distinct metal–insulator–metal (MIM) memory RRAM device structures were formed, i.e., Al/SnO₂/TiN/SiO₂/Si and Pt/SnO₂/TiN/SiO₂/Si. In addition, the symmetry bipolar switching characteristics, electrical conduction mechanism, and oxygen concentration factor of the tin oxide-based memory devices using rapid thermal annealing and different top electrodes were determined and investigated by ohmic, space-charge-limit-current, Schottky, and Poole–Frenkel conduction equations in this study. Full article

Silicon carbide (SiC), a wide-bandgap semiconductor, is renowned for its exceptional performance in power electronics and extreme-temperature environments. However, precision low-loss laser slicing of SiC is impeded by energy divergence and crack delamination induced by refractive-index-mismatch interfacial aberrations. This study presents an integrated laser slicing system based on a liquid crystal on silicon spatial light modulator (LCOS-SLM) to address aberration-induced focal elongation and energy inhomogeneity. Through dynamic modulation of the laser wavefront via an inverse ray-tracing algorithm, the system corrects spherical aberrations from refractive index mismatch, thus achieving precise energy concentration at wanted depths. A laser power attenuation model based on interface reflection and the Lambert–Beer law is established to calculate the required laser power at varying processing depths. Experimental results demonstrate that aberration correction reduces focal depth to approximately one-third (from 45 μm to 15 μm) and enhances energy concentration, eliminating multi-layer damage and increasing crack propagation length. Post-correction critical power measurements across depths are consistent with model predictions, with maximum error decreasing from >50% to 8.4%. Verification on a 6-inch N-type SiC ingot shows 90 μm damage thickness, confirming system feasibility for SiC laser slicing. The integrated aberration-correction approach provides a novel solution for high-precision SiC substrate processing. Full article

In this study we report on the structural, mechanical, and electrical characterization of different structures of vertically aligned zinc oxide (ZnO) nanowires (NWs) synthesized using hydrothermal methods. By optimizing the growth conditions, scanning electron microscopy (SEM) micrographs show that the ZnO NWs could reach an astounding 51.9 ± 0.82 µm in length, 0.7 ± 0.08 µm in diameter, and 3.3 ± 2.1 µm⁻² density of the number of NWs per area within 24 h of growth time, compared with a reported value of ~26.8 µm in length for the same period. The indentation modulus of the as-grown ZnO NWs was determined using contact resonance (CR) measurements using atomic force microscopy (AFM). An indentation modulus of 122.2 ± 2.3 GPa for the NW array sample with an average diameter of ~690 nm was found to be close to the reference bulk ZnO value of 125 GPa. Furthermore, the measurement of the piezoelectric coefficient (d₃₃) using the traceable ESPY33 tool under cyclic compressive stress gave a value of 1.6 ± 0.4 pC/N at 0.02 N with ZnO NWs of 100 ± 10 nm and 2.69 ± 0.05 µm in diameter and length, respectively, which were embedded in an S1818 polymer. Current–voltage (I-V) measurements of the ZnO NWs fabricated on an n-type silicon (Si) substrate utilizing a micromanipulator integrated with a tungsten (W) probe exhibits Ohmic behavior, revealing an important phenomenon which can be attributed to the generated electric field by the tungsten probe, dielectric residue, or conductive material. Full article

Epitaxial growth of β-Ga₂O₃ nanowires on silicon substrates was realized by the low-pressure chemical vapor deposition (LPCVD) method. The as-grown Si/Ga₂O₃ heterojunctions were employed in the Underwater DUV detection. It is found that the carrier type as well as the carrier concentration of the silicon substrate significantly affect the performance of the Si/Ga₂O₃ heterojunction. The p-Si/β-Ga₂O₃ (2.68 × 10¹⁵ cm⁻³) devices exhibit a responsivity of up to 205.1 mA/W, which is twice the performance of the devices on the n-type substrate (responsivity of 93.69 mA/W). Moreover, the devices’ performance is enhanced with the increase in the carrier concentration of the p-type silicon substrates; the corresponding device on the high carrier concentration substrate (6.48 × 10¹⁷ cm⁻³) achieves a superior responsivity of 845.3 mA/W. The performance enhancement is mainly attributed to the built-in electric field at the p-Si/n-Ga₂O₃ heterojunction and the reduction in the Schottky barrier under high carrier concentration. These findings would provide a strategy for optimizing carrier transport and interface engineering in solar-blind UV photodetectors, advancing the practical use of high-performance solar-blind photodetectors for underwater application. Full article

This paper investigates 6.5 kV SiC trench gate p-channel IGBTs using Sentaurus TCAD simulations. The proposed superjunction structure is compared to conventional designs to highlight its advantages. The p-IGBT, fabricated on an n-type substrate, offers notable commercial advantages over n-IGBTs on p-type substrates. The n-shield can effectively protect the trench gate oxide in the corners of SiC. The n-shield and n-pillar can be either floating or grounded, with the floating shield condition significantly enhancing injection and improving forward conduction performance. The superjunction floating shield p-IGBT (SJFS-p-IGBT) improves forward conduction voltage (V_F) by 47% and 15% compared to conventional planar gate p-IGBT (CP-p-IGBT) and grounded shield p-IGBT (CGS-p-IGBT), respectively. For switching characteristics, the superjunction grounded shield p-IGBT (SJGS-p-IGBT) improves turn-off time (t_off) by 15% compared to the conventional floating shield p-IGBT (CFS-p-IGBT). The trade-off between V_F and turn-off energy (E_off) is analyzed, showing that the SJFS-p-IGBT offers a better trade-off. A negative temperature coefficient is observed at high buffer layer doping concentration and elevated temperatures, leading to an increase in V_F. This provides design guidance for devices operating in parallel at high temperatures. These results demonstrate the SJ’s potential to enhance efficiency and performance for ultra-high voltage applications. Full article

This work presents the improvement of the electro-optical response of n-type crystalline silicon via dip-coated graphene oxide (GO) thin films. GO was deposited on Si/SiO₂ by immersion, and the resulting heterostructures were characterized by cyclic voltammetry measurements and Raman spectroscopy. Raman analysis revealed a slight but measurable broadening (~0.7 cm⁻¹) of the Si TO phonon mode at 514 cm⁻¹, indicating local interfacial strain. Cyclic voltammetry measurements showed a substantial increase in photocurrent in comparison to pristine silicon substrates. These effects are attributed to a GO-induced p-type inversion layer and enhanced interfacial charge transfer. The results suggest that GO can serve as a functional interfacial layer for improving silicon-based optoelectronic and photoelectrochemical devices. Full article

4H-silicon carbide (4H-SiC) is a cornerstone for next-generation optoelectronic and power devices owing to its unparalleled thermal, electrical, and optical properties. However, its chemical inertness and low dopant diffusivity for most dopants have historically impeded effective doping. This study unveils a transformative laser-assisted boron doping technique for n-type 4H-SiC, employing a pulsed Nd:YAG laser (λ = 1064 nm) with a liquid-phase boron precursor. By leveraging a heat-transfer model to optimize laser process parameters, we achieved dopant incorporation while preserving the crystalline integrity of the substrate. A novel optical characterization framework was developed to probe laser-induced alterations in the optical constants—refraction index ($\mathrm{n}$) and attenuation index ($\mathrm{k}$)—across the MIDIR spectrum (λ = 3–5 µm). The optical properties pre- and post-laser doping were measured using Fourier-transform infrared spectrometry, and the corresponding complex refraction indices were extracted by solving a coupled system of nonlinear equations derived from single- and multi-layer absorption models. These models accounted for the angular dependence in the incident beam, enabling a more accurate determination of $\mathrm{n}$ and $\mathrm{k}$ values than conventional normal-incidence methods. Our findings indicate the formation of a boron-acceptor energy level at 0.29 eV above the 4H-SiC valence band, which corresponds to λ = 4.3 µm. This impurity level modulated the optical response of 4H-SiC, revealing a reduction in the refraction index from 2.857 (as-received) to 2.485 (doped) at λ = 4.3 µm. Structural characterization using Raman spectroscopy confirmed the retention of crystalline integrity post-doping, while secondary ion mass spectrometry exhibited a peak boron concentration of 1.29 × 10¹⁹ cm⁻³ and a junction depth of 450 nm. The laser-fabricated p–n junction diode demonstrated a reverse-breakdown voltage of 1668 V. These results validate the efficacy of laser doping in enabling MIDIR tunability through optical modulation and functional device fabrication in 4H-SiC. The absorption models and doping methodology together offer a comprehensive platform for paving the way for transformative advances in optoelectronics and infrared materials engineering. Full article

AlCrN and AlCrSiN coatings were deposited via reactive magnetron sputtering. This study investigates the effects of radio frequency (RF) substrate bias, ranging from 0 V to 200 V, on the chemical composition, microstructure, and mechanical properties of the coatings. All crystalline coatings exhibited a single wurtzite-type hexagonal close-packed (hcp) structure. At a 0 V substrate bias, the AlCrN coating consisted of porous V-shaped columnar crystallites, while the AlCrSiN coating exhibited a porous, fiber-like amorphous structure. As the substrate bias increased, crystal growth was promoted, void density decreased, and the surface morphology transitioned from a textured to a more rounded appearance. Additionally, the preferred orientation shifted toward the (101) direction. However, at excessively high substrate bias, re-nucleation occurred, leading to grain refinement and increased film densification, which in turn caused a further shift in the preferred orientation toward the (002) plane. Due to its multi-element composition and the low solubility of Si in nitrides, AlCrSiN coatings tend to exhibit an amorphous growth tendency during sputtering. As a result, their microstructure is more sensitive to substrate bias. This sensitivity results in the formation of a highly dense structure with an optimal crystallite size at a substrate bias of 100 V, leading to a hardness of 22.6 GPa—surpassing that of the AlCrN coating. Full article

Three-dimensional flexible solar fabrics based on hydrogenated amorphous silicon (a-Si:H) thin film solar cells were prepared and characterized. A glass fiber fabric with a polytetrafluoroethylene (PTFE) coating proved to be a suitable textile substrate. Interwoven metal wires enable an integrated electrical interconnection. An array of solar cells consisting of an a-Si:H layer stack with a highly p-type/intrinsic/highly n-type doping profile was deposited onto it. Silver was used as the back contact with indium tin oxide (ITO) as the front contact. The best solar cells show an efficiency of 3.9% with an open-circuit voltage of 876 mV and a short-circuit current density of 11.4 mA/cm². The high series resistance limits the fill factor to 39%. The potential of the textile solar cells is shown by the achieved pseudo fill factor of 79% when neglecting the series resistance, resulting in a pseudo efficiency of 7.6%. With four textile solar cells connected in a series, an open-circuit voltage of about 3 V is achieved. Full article

Hydrogenated amorphous silicon (a-Si:H) devices on flexible substrates are currently being studied for application in dosimetry and beam flux measurements. The necessity of in vivo dosimetry requires thin devices with maximal transparency and flexibility. For this reason, a thin (<10 µm) a-Si:H device deposited on a thin polyimide sheet is a very valid option for this application. Furthermore, a-Si:H is a material that has an intrinsically high radiation hardness. In order to develop these devices, the HASPIDE (Hydrogenated Amorphous Silicon Pixel Detectors) collaboration has implemented two different device configurations: n-i-p type diodes and charge-selective contact devices.Charge-selective contact-based devices have been studied for solar cell applications and, recently, the above-mentioned collaboration has tested these devices for X-ray dose measurements. In this paper, the HASPIDE collaboration has studied the X-ray and proton response of charge-selective contact devices deposited on Polyimide. The linearity of the photocurrent response to X-ray versus dose-rate has been assessed at various bias voltages. The sensitivity to protons has also been studied at various bias voltages and the wide range linearity has been tested for fluxes in the range from 8.3 × 10⁷ to 2.49 × 10¹⁰ p/(cm² s). Full article