Search Results (12)

The development of artificial intelligence has resulted in significant challenges to conventional von Neumann architectures, including the separation of storage and computation, and power consumption bottlenecks. The new generation of brain-like devices is accelerating its evolution in the direction of high-density integration and integrated sensing, storage, and computing. The structural and information transmission similarity between memristors and biological synapses signifies their unique potential in sensing and memory. Therefore, memristors have become potential candidates for neural devices. In this paper, we have designed an optoelectronic memristor based on a ZnO/Cu₂O structure to achieve synaptic behavior through the modulation of electrical signals, demonstrating the recognition of a dataset by a neural network. Furthermore, the optical synaptic functions, such as short-term/long-term potentiation and learn-forget-relearn behavior, and advanced synaptic behavior of optoelectronic modulation, are successfully simulated. The mechanism of light-induced conductance enhancement is explained by the barrier change at the interface. This work explores a new pathway for constructing next-generation optoelectronic synaptic devices, which lays the foundation for future brain-like visual chips and intelligent perceptual devices. Full article

Visual adaptation is one of the most significant features that helps organisms process complicated image information in time-varying environments. Emulating this function is highly desirable for energy-efficient image perception. In this work, we demonstrate an yttrium oxide (Y₂O₃)-based optoelectronic memristor and emulate photopic adaptation behavior in a single device. Decay amplitude and photosensitivity are indexed to describe the time-dependent characteristics of photopic adaptation. An intensity-dependent characteristic, namely Weber’s law, is also investigated in this work. Photopic adaptation originates from the trapping of photogenerated carriers in oxygen vacancies. Based on photopic adaptation behavior, a neuromorphic vision system capable of adapting to environmental brightness is constructed using the proposed optoelectronic memristor array. Memristor arrays can emulate sensing and adaptation functions in order to enhance images against bright backgrounds. Our work provides a feasible pathway toward self-adaptive neuromorphic vision systems. Full article

This study presents the fabrication and characterization of a dual-functional Pt/Ga₂O₃/Pt optoelectronic synaptic device, capable of operating as both a memristor and a memcapacitor. We detail the optimized radio frequency (RF) sputtering parameters, including a base pressure of 8.7 × 10⁻⁷ Torr, RF power of 100 W, working pressure of 3 mTorr, and the use of high-purity Ga₂O₃ and Pt targets. These precisely controlled conditions facilitated the formation of an amorphous Ga₂O₃ thin film, as confirmed by XRD and AFM analyses, which demonstrated notable optical and electrical properties, including light absorption properties in the visible spectrum. The device demonstrated distinct resistive and capacitive switching behaviors, with memory characteristics highly dependent on the wavelength of the applied light. Ultraviolet (365 nm) exposure facilitated long-term memory retention, while visible light (660 nm) supported short-term memory behavior. Paired-pulse facilitation (PPF) measurements revealed that capacitance showed slower decay rates than EPSC, suggesting a more stable memory performance due to the dynamics of carrier trapping and detrapping at the insulator interface. Learning simulations further highlighted the efficiency of these devices, with improved memory retention upon repeated exposure to UV light pulses. Visual encoding simulations on a 3 × 3 pixel array also demonstrated effective multi-level memory storage using varying light intensities. These findings suggest that Ga₂O₃-based memristor and memcapacitor devices have significant potential for neuromorphic applications, offering tunable memory performance across various wavelengths from ultraviolet to red. Full article

Memristor devices for resistive-switching memory and artificial synapses have emerged as promising solutions for overcoming the technological challenges associated with the von Neumann bottleneck. Recently, due to their unique optoelectronic properties, solution processability, fast switching speeds, and low operating voltages, quantum dots (QDs) have drawn substantial research attention as candidate materials for memristors and artificial synapses. This review covers recent advancements in QD-based resistive random-access memory (RRAM) for resistive memory devices and artificial synapses. Following a brief introduction to QDs, the fundamental principles of the switching mechanism in RRAM are introduced. Then, the RRAM materials, synthesis techniques, and device performance are summarized for a relative comparison of RRAM materials. Finally, we introduce QD-based RRAM and discuss the challenges associated with its implementation in memristors and artificial synapses. Full article

Tungsten disulfide (WS₂) is a promising material with excellent electrical, magnetic, optical, and mechanical properties. It is regarded as a key candidate for the development of optoelectronic devices due to its high carrier mobility, high absorption coefficient, large exciton binding energy, polarized light emission, high surface-to-volume ratio, and tunable band gap. These properties contribute to its excellent photoluminescence and high anisotropy. These characteristics render WS2 an advantageous material for applications in light-emitting devices, memristors, and numerous other devices. This article primarily reviews the most recent advancements in the field of optoelectronic devices based on two-dimensional (2D) nano-WS₂. A variety of advanced devices have been considered, including light-emitting diodes (LEDs), sensors, field-effect transistors (FETs), photodetectors, field emission devices, and non-volatile memory. This review provides a guide for improving the application of 2D WS₂ through improved methods, such as introducing defects and doping processes. Moreover, it is of great significance for the development of transition-metal oxides in optoelectronic applications. Full article

Compared with purely electrical neuromorphic devices, those stimulated by optical signals have gained increasing attention due to their realistic sensory simulation. In this work, an optoelectronic neuromorphic device based on a photoelectric memristor with a Bi₂FeCrO₆/Al-doped ZnO (BFCO/AZO) heterostructure is fabricated that can respond to both electrical and optical signals and successfully simulate a variety of synaptic behaviors, such as STP, LTP, and PPF. In addition, the photomemory mechanism was identified by analyzing the energy band structures of AZO and BFCO. A convolutional neural network (CNN) architecture for pattern classification at the Mixed National Institute of Standards and Technology (MNIST) was used and improved the recognition accuracy of the MNIST and Fashion-MNIST datasets to 95.21% and 74.19%, respectively, by implementing an improved stochastic adaptive algorithm. These results provide a feasible approach for future implementation of optoelectronic synapses. Full article

Quantum dots (QDs) are emerging as promising candidates for innovative memristive materials, owing to their distinct surface, quantum size, and edge effects. Recent research has focused on tailoring QDs with specific organic molecules to fine-tune charge transfer states between the host and grafted species, as well as enhancing their dispersibility and processability. Violet phosphorus (VP), a newly discovered two-dimensional phosphorus allotrope, offers excellent carrier dynamics, predictable modifiability, and superior oxidation resistance, making it a promising contender in this domain. In this study, we synthesized a rich azobenzene-containing star-shaped polymer diazonium salt (AzoSPD) to functionalize violet phosphorus quantum dots (VPQDs), with the dual objectives of enhancing organic dispersibility and introducing photo-switching capabilities. The synthesized AzoSPD–VPQDs exhibit intramolecular charge transfer characteristics under electrical stimuli of ambient conditions, displaying significant non-volatile rewriteable memory properties and a substantial switching ratio exceeding 2 × 10³. Furthermore, the high resistance state (HRS) current can be enhanced by nearly 40 times under 465 nm illumination, enabling optoelectronic information sensing and storage within a single device. This work not only provides insights into enhancing the optoelectronic properties of QDs through functional organic molecular modification but also represents a pioneering exploration of the potential applications of VPQDs in novel memristors. Full article

For the CH₃NH₃PbI₃-based optoelectronic memristor, the high ion-migration randomness induces high fluctuation in the resistive switching (RS) parameters. Grain boundaries (GBs) are well known as the ion-migration sites due to their low energy barrier. Herein, a polyacrylonitrile (PAN) passivation method is developed to reduce GBs of the CH₃NH₃PbI₃ film and improve the switching uniformity of the memristor. The crystal grain size of CH₃NH₃PbI₃ increases with the addition of PAN, and the corresponding number of GBs is consequently reduced. The fluctuations of the RS parameters of the memristor device are significantly reduced. With the memristor, nonvolatile image sensing, image memory, and image Boolean operations are demonstrated. This work proposes a strategy for developing high-performance CH₃NH₃PbI₃ optoelectronic memristors. Full article

Memristors have been proved effective in intelligent computing systems owing to the advantages of non-volatility, nanometer size, low power consumption, compatibility with traditional CMOS technology, and rapid resistance transformation. In recent years, considerable work has been devoted to the question of how to design and optimize memristor models with different structures and physical mechanisms. Despite the fact that the optoelectronic effect inevitably makes the modelling process more complex and challenging, relatively few research works are dedicated to optoelectronic memristor modelling. Based on this, this paper develops an optoelectronic memristor model (containing mathematical model and circuit model). Moreover, the composite memristor circuit (series- and parallel-connected configuration) with a rotation mechanism is discussed. Further, a multi-valued logic circuit is designed, which is capable of performing multiple logic functions from 0–1, verifying the validity and effectiveness of the established memristor model, as well as opening up a new path for the circuit implementation of fuzzy logic. Full article

Layered two-dimensional (2D) and quasi-zero-dimensional (0D) materials effectively absorb radiation in the wide ultraviolet, visible, infrared, and terahertz ranges. Photomemristive structures made of such low-dimensional materials are of great interest for creating optoelectronic platforms for energy-efficient storage and processing of data and optical signals in real time. Here, photosensor and memristor structures based on graphene, graphene oxide, bismuth oxyselenide, and transition metal dichalcogenides are reviewed from the point of view of application in broadband image recognition in artificial intelligence systems for autonomous unmanned vehicles, as well as the compatibility of the formation of layered neuromorphic structures with CMOS technology. Full article

Two-dimensional (2D) van der Waals (vdW) layered transition metal dichalcogenides (TMDs) materials have been receiving a huge interest due to atomically thin thickness, excellent optoelectronic properties, and free dangling bonds. Especially the metallic TMDs, such as MoTe₂ (1T’ phase), NbS_2, or NbSe_2, have shown fascinating physical properties through various applications, such as superconductor and charge density wave. However, carrier transport of metallic TMDs would be degraded due to the poor stability in ambient conditions. To date, achieving both high device performance and long-term stability is still a huge challenge. Thus, an alternative way to develop both unavoidable native oxide and metallic TMDs is under consideration for new era research. In this respect, 2D metallic TMD materials have attracted high attention due to their great potential in neuromorphic-based devices with metal-insulator-metal structures, making it possible to produce scalable, flexible, and transparent memory devices. Herein, we experimentally demonstrated a synthesized metallic NbSe₂ by a chemical vapor deposition method with a highly uniform, good shape distribution and layer controller ranging from 2–10 layers. Together, for the first time, we proposed the NbO_x/NbSe₂ heterostructure memristor device based on the native NbO_x oxide on the interface of multi-layer NbSe₂ flakes. The ultra-thin native NbO_x oxide of 3 nm was formed after a period of oxidation time under air condition, which acts as a memristive surface in the Au-NbO_x-Au lateral memristor device, in which oxygen vacancies form a conductive filament. Our NbO_x/NbSe₂ hetero-tructured memristor exhibits a stable memory window, a low-resistance-state/high-resistance-state ratio of 20, and stable endurance properties over 20 cycles at a low working voltage of 1 V. Furthermore, by the retention property test, non-volatile characteristics were confirmed after over 3000 s in our best data. Through a systematic study of the NbO_x/NbSe₂ heterostructured memristor device, this report will open new opportunities for next-generation memory devices application. Full article

Methylammonium lead halide perovskites have attracted extensive attention for optoelectronic applications. Carrier transport in perovskites is obscured by vacancy-mediated ion migration, resulting in anomalous electronic behavior and deteriorated reliability of the devices. In this communication, we demonstrate that ion migration can be significantly enhanced by doping additional mobile I^- ions into the perovskite bulk. Ionic confinement structures of vertical metal oxide semiconductor (MOS) and lateral metal semiconductor metal (MSM) diodes designed to decouple ion-migration/accumulation and electronic transport are fabricated and characterized. Measurement conditions (electric-field history, scan rate and sweep frequency) are shown to affect the electronic transport in perovskite films, through a mechanism involving ion migration and accumulation at the block interfaces. Prominent zero-point drifts of dark current-voltage curves in both vertical and lateral diode are presented, and further varied with the perovskite film containingthe different iodine-lead atomic ratio. The doped perovskite has a large ion current at grain boundaries, offering a large ion hysteresis loopand zero drift value. The results confirmthat the intrinsic behavior of perovskite film is responsible for the hysteresisof the optoelectronic devices, but also paves the way for potential applications in many types of devices including memristors and solid electrolyte batteries by doping the native species (I⁻ ions) in perovskite film. Full article