Search Results (122)

All-inorganic halide perovskites have attracted significant interest in photodetector applications due to their remarkable photoresponse properties. However, the toxicity and instability of lead-based perovskites hinder their commercialization. In this work, we propose cubic Ba₃SbI₃ as a promising, environmentally friendly, lead-free material for next-generation photodetector applications. Ba₃SbI₃ shows good light absorption, low effective masses, and favorable elemental abundance and cost, making it a promising candidate compound for device applications. Its structural, mechanical, electronic, and optical properties were systematically investigated using density functional theory (DFT) with the Perdew–Burke–Ernzerhof (PBE) and hybrid HSE06 functionals. The material was found to be dynamically and mechanically stable, with a direct bandgap of 0.78 eV (PBE) and 1.602 eV (HSE06). Photodetector performance was then simulated in an Al/FTO/In₂S₃/Ba₃SbI₃/Sb₂S₃/Ni configuration using SCAPS-1D. To optimize device efficiency, the width, dopant level, and bulk concentration for each layer of the gadgets were systematically modified, while the effects of interface defects, operating temperature, and series and shunt resistances were also evaluated. The optimized device achieved an open-circuit voltage (Voc) of 1.047 V, short-circuit current density (Jsc) of 31.65 mA/cm², responsivity of 0.605 A W⁻¹, and detectivity of 1.05 × 10¹⁷ Jones. In contrast, in the absence of the Sb₂S₃ layer, the performance was reduced to a Voc of 0.83 V, Jsc of 26.8 mA/cm², responsivity of 0.51 A W⁻¹, and detectivity of 1.5 × 10¹⁵ Jones. These results highlight Ba₃SbI₃ as a promising platform for high-performance, cost-effective, and environmentally benign photodetectors. Full article

Perovskite materials have emerged as promising candidates for next-generation photodetectors (PDs) owing to their superior optoelectronic properties and compatibility with low-cost, low-temperature fabrication processes. Broad applicability of PDs spans diverse fields, including X-ray detection, wearable electronics, autonomous vehicles, artificial intelligence, imaging, optical communication, and biomedical sensing, offering advantages over conventional semiconductor PDs based on Si, Ge, InGaAs, and GaN. The integration of plasmonic nanostructures into perovskite-based devices has recently emerged as an effective strategy to enhance performance by amplifying light absorption near the perovskite layer. This review summarizes recent advances and design strategies for plasmonic-integrated perovskite photodetectors (Pe-PDs), with a particular emphasis on plasmonic nanopatterns and nanoparticles as viable approaches for solution-processable Pe-PDs. Full article

Ternary chalcogenide-based sulfide materials with distorted morphologies such as BaZrS₃, CaZrS₃, and SrZrS₃, have recently gained much attention in optoelectronics and photovoltaics due to their high structural and thermal stability and compatibility with low-cost, earth-abundant synthesis routes. However, their relatively large bandgaps often limit their suitability for near-infrared (NIR) photodetectors. Here, we conducted a comprehensive investigation of SrHfSe₃, a ternary chalcogenide with an orthorhombic crystal structure and distinctive needle-like morphology, as a promising candidate for NIR photodetection. SrHfSe₃ exhibits a direct bandgap of 1.02 eV, placing it well within the NIR range. Its robust structure, high temperature stability, phase stability and natural abundance make it a compelling material for next-generation, self-powered NIR photodetectors. An in-depth analysis of the SrHfSe₃-based photodetector was performed using SCAPS-1D simulations, focusing on key performance metrics such as J–V behavior, photoresponsivity, and specific detectivity. Device optimization was achieved by thoroughly altering each layer thickness, doping concentrations, and defect densities. Additionally, the influence of interface defects, absorber bandgap, and operating temperature was assessed to enhance the photoresponse. Under optimal conditions, the device achieved a short-circuit current density (Jsc) of 45.88 mA/cm², an open-circuit voltage (Voc) of 0.7152 V, a peak photoresponsivity of 0.85 AW⁻¹, and a detectivity of 2.26 × 10¹⁴ Jones at 1100 nm. A broad spectral response spanning 700–1200 nm confirms its efficacy in the NIR region. These results position SrHfSe₃ as a strong contender for future NIR photodetectors and provide a foundation for experimental validation in advanced optoelectronic applications. Full article

We have conducted a first-time investigation into the multiferroic properties and band gap behavior of ${\mathrm{CuFeO}}_2$ doped with Al, Ga, and In ions at the Fe site, employing a microscopic model and Green’s function formalism. The tunability of the band gap across a broad energy spectrum highlights the potential of perovskite materials for advanced applications, including photovoltaics, photodetectors, lasers, light-emitting diodes, and high-energy particle sensors. The disparity in ionic radii between the dopant and host ions introduces local lattice distortions, leading to modifications in the exchange interaction parameters. As a result, the influence of ion doping on various properties of ${\mathrm{CuFeO}}_2$ has been elucidated at microscopic level. Our findings indicate that Al doping enhances magnetization and reduces the band gap energy. In contrast, doping with Ga or In results in a decrease in magnetization and an increase in band gap energy. Additionally, it is demonstrated that ferroelectric polarization can be induced either via external magnetic fields or by Al substitution at the Fe site. The theoretical results show good qualitative agreement with experimental data, confirming the validity of the proposed model and method. Full article

In this study, a UVC photodetector (PD) was fabricated by incorporating CsI into a conventional double-cation perovskite (FAMAPbI₃) to enhance its stability. The device utilized a methylammonium iodide post-treatment solution to fabricate CsFAMAPbI₃ perovskite thin films, which functioned as the primary light-absorbing layer in an NIP structure composed of n-type SnO₂ and p-type spiro-OMeTAD. Perovskite films were fabricated and analyzed as a function of the Cs concentration to optimize the Cs content. The results demonstrated that Cs doping improved the crystallinity and phase stability of the films, leading to their enhanced electron mobility and photodetection performance. The UVC PD with an optimum Cs concentration exhibited a responsivity of 58.2 mA/W and a detectivity of 3.52 × 10¹⁴ Jones, representing an approximately 7% improvement over conventional structures. Full article

Two-dimensional (2D) hybrid organic–inorganic perovskites (HOIPs) have attracted considerable attention in optoelectronic applications, owing to their remarkable characteristics. Nevertheless, the application of 2D HOIPs encounters inherent challenges due to the presence of insulating organic spacers, which create barriers for efficient interlayer charge transport (CT). To tackle this issue, we propose a BA₂MAPb₂I₇/PEA₂MA₂Pb₃I₁₀ bilayer heterostructure, where efficient interlayer energy transfer (ET) facilitates compensation for the restricted charge transport across the organic spacer. Our findings reveal that under 532 nm light illumination, the BA₂MAPb₂I₇/PEA₂MA₂Pb₃I₁₀ heterostructure photodetector exhibits a significant photocurrent enhancement compared with that of the pure PEA₂MA₂Pb₃I₁₀ device, mainly due to the contribution of the ET process. In contrast, under 600 nm light illumination, where ET is absent, the enhancement is rather limited, emphasizing the critical role of ET in boosting device performance. The overlap of the PL emission peak of BA₂MAPb₂I₇ with the absorption spectra of PEA₂MA₂Pb₃I₁₀, alongside the PL quenching of BA₂MAPb₂I₇ and the enhanced emission of PEA₂MA₂Pb₃I₁₀ provide confirmation of the existence of ET in the BA₂MAPb₂I₇/PEA₂MA₂Pb₃I₁₀ heterostructure. Furthermore, the PL enhancement factor followed a 1/d² relationship with the thickness of the hBN layer, indicating that ET originates from 2D-to-2D dipole–dipole coupling. This study not only highlights the potential of leveraging ET mechanisms to overcome the limitations of interlayer CT, but also contributes to the fundamental understanding required for engineering advanced 2D HOIP optoelectronic systems. Full article

Perovskite bionic eyes have emerged as highly promising candidates for photodetection applications to their wide-angle imaging capabilities, high external quantum efficiency(EQE), and low-cost fabrication and integration. Since their initial exploration in 2015, significant advancements have been achieved in this field, with their EQE reaching 27%. Nevertheless, intrinsic challenges such as the oxidation susceptibility of perovskites and difficulties in curved surface growth hinder their further development. Addressing these issues necessitates a comprehensive and systematic understanding of the preparation mechanisms for hemispherical perovskite, as well as the development of effective mitigation strategies. In this review, a review published provides a detailed overview of the research progress in hemispherical perovskite photodetectors, with a particular focus on the fundamental properties and fabrication pathways of hemispherical perovskites. Furthermore, various strategies to enhance the performance of hemispherical perovskite and overcome preparation challenges are thoroughly discussed. Finally, existing challenges and perspectives are presented to further advance the development of eco-friendly hemispherical perovskite. Full article

In the first part of this study, Y₂O₃-doped copper thiocyanate (CuSCN) with different x wt% (named CuSCN-xY, x = 0, 1, 2, and 3) films were synthesized onto ITO substrates using the spin coating method. UV-vis, SEM, AFM, EDS, and cyclic voltammetry were used to investigate the material properties of the proposed films. The conductivity and carrier mobility of the films increased with additional yttrium doping. It was found that the films with 2% Y₂O₃ (CuSCN-2Y) have the smallest valence band edges (5.28 eV). Meanwhile, CuSCN-2Y films demonstrated the densest surface morphology and the smallest surface roughness (22.8 nm), along with the highest conductivity value of 764 S cm⁻¹. Then, P-I-N self-powered UV photodetectors (PDs) were fabricated using the ITO substrate/ZnO seed layer/ZnO nanorod/CsPbBr₃/CuSCN-xY/Ag structure, and the characteristics of the devices were measured. In terms of response time, the rise time and fall time were reduced from 26 ms/22 ms to 9 ms/5 ms; the responsivity was increased from 243 mA/W to 534 mA/W, and the on/off ratio was increased to 2.47 × 10⁶. The results showed that Y₂O₃ doping also helped improve the P-I-N photodetector’s device performance, and the mechanisms were investigated. Compared with other published P-I-N self-powered photodetectors, our proposed devices show a fairly high on/off ratio, quick response times, and high responsivity and detectivity. Full article

Perovskite, as a promising class of photodetection material, demonstrates considerable potential in replacing conventional bulk light-detection materials such as silicon, III–V, or II–VI compound semiconductors and has been widely applied in various special light detection. Relying solely on the intrinsic photoelectric properties of perovskite gradually fails to meet the evolving requirements attributed to the escalating demand for low-cost, lightweight, flexible, and highly integrated photodetection. Direct manipulation of electrons and photons with differentiation of local electronic field through predesigned optical nanostructures is a promising strategy to reinforce the detectivity. This review provides a concise overview of the optical manipulation strategy in perovskite photodetector through various optical nanostructures, such as isolated metallic nanoparticles and continuous metallic gratings. Furthermore, the special light detection techniques involving more intricate nanostructure designs have been summarized and discussed. Reviewing these optical manipulation strategies could be beneficial to the next design of perovskite photodetector with high performance and special light recognition. Full article

This study aims to enhance optoelectronic properties of all-inorganic perovskite photodetectors (PDs) by incorporating a bilayer electron transport layer (ETL). The bilayer ETL composed of SnO₂ and ZnO effectively optimizes energy level alignment at the interface, facilitating efficient electron extraction from the CsPbI₂Br perovskite layer while suppressing shunt pathways. Additionally, it enhances interfacial properties by mitigating defects and minimizing dark current leakage, thereby improving overall device performance. As a result, the bilayer ETL-based PDs exhibit broadband photoresponsivity in 300 to 700 nm with a responsivity of 0.45 A W⁻¹ and a specific detectivity of 9 × 10¹³ Jones, outperforming the single-ETL devices. Additionally, they demonstrate stable cyclic photoresponsivity with fast response times (14 μs for turn-on and 32 μs for turn-off). The bilayer ETL also improves long-term reliability and thermal stability, highlighting its potential for high performance, reliability, and practical applications of all-inorganic perovskite PDs. Full article

The increasing spread of infectious diseases caused by pathogenic microorganisms underscores the urgent need for highly sensitive, portable, and rapid nucleic acid detection technologies to facilitate early diagnosis and effective prevention. In this study, we developed a fluorescence-based nucleic acid detection platform that integrates a microfluidic chip with an all-inorganic perovskite photodetector. The system enables integrated operation of nucleic acid extraction, purification, and amplification on a microfluidic chip, combined with real-time electrical signal readout via a CsPbBr₃ perovskite photodetector. Experimental results indicate that the photodetector exhibits high responsivity at 530 nm, aligning well with the primary emission peak of FAM. The system demonstrates a strong linear correlation between photocurrent and FAM concentration over the range of 0.01–0.4 μM (R² = 0.928), with a low detection limit of 0.01 μM and excellent reproducibility across multiple measurements. Validation using FAM standard solutions and Escherichia coli samples confirmed the system’s reliable linearity and signal stability. This platform demonstrates strong potential for rapid pathogen screening and point-of-care diagnostic applications. Full article

To meet the demands for functional layers in inverted flexible perovskite solar cells, high-performance formamidinium-based perovskite solar cells, and high-performance photodetectors in future applications, it is crucial to appropriately reduce the bandgap of third-generation wide-bandgap semiconductor materials. In this study, we first optimized doping sites through Ag-Cl and Ag-S configurations to establish stable substitution patterns, followed by density functional theory (DFT) calculations using the Generalized Gradient Approximation with the Perdew–Burke–Ernzerhof (GGA-PBE) functional, implemented in the Vienna Ab initio Simulation Package (VASP). A plane-wave basis set with a cutoff energy of 450 eV and a 3 × 4 × 3 Γ-centered k-mesh were adopted to investigate the effects of Mg-Cl, Mg-S, Zn-Cl, and Zn-S co-doping on the structural stability, electronic properties, and optical characteristics of β-Ga₂O₃. Based on structural symmetry, six doping sites were considered, with Ag-S/Cl systems revealing preferential occupation at octahedral Ga(1) sites through site formation energy analysis. The results demonstrate that Mg-Cl, Mg-S, Zn-Cl, and Zn-S co-doped systems exhibit thermodynamic stability. The bandgap of pristine β-Ga₂O₃ was calculated to be 2.08 eV. Notably, Zn-Cl co-doping achieves the lowest bandgap reduction to 1.81 eV. Importantly, all co-doping configurations, including Mg-Cl, Mg-S, Zn-Cl, and Zn-S, effectively reduce the bandgap of β-Ga₂O₃. Furthermore, the co-doped systems show enhanced visible light absorption (30% increase at 500 nm) and improved optical storage performance compared to the pristine material. Full article

Due to high responsivity and wide spectral sensitivity, metal halide perovskite photodiodes have a wide range of applications in the fields of visible light and near-infrared photodetection. Specific detectivity is an important quality factor for high-performance perovskite-based photodiodes, while one of the keys to achieving high detectivity is to reduce dark current. Here, 3-fluoro phenethylammonium iodide (3F-PEAI) was used to passivate the perovskite surface and form the two-dimensional (2D) perovskite on the three-dimensional (3D) perovskite surface. The as-fabricated passivated perovskite photodiodes with 2D/3D hybrid-dimensional perovskite heterojunctions showed two orders of magnitude smaller dark current, larger open circuit voltage and faster photoresponse, when compared to the control perovskite photodiodes. Meanwhile, it maintained almost identical photocurrent, achieving a high specific detectivity up to 2.4 × 10¹² Jones and over the visible-near-infrared broadband photodetection. Notably, the champion photoresponsivity value of 0.45 A W⁻¹ was achieved at 760 nm. It was verified that the 2D capping layers were able to suppress trap states and accelerate photocarrier collection. This work demonstrates strategic passivation of surface iodine vacancies, offering a promising pathway for developing ultrasensitive and low-power consumption photodetectors based on metal halide perovskites. Full article

Recent advancements in metal/perovskite photodetectors have leveraged plasmonic effects to enhance the efficiency of photogenerated carrier separation. In this work, we present an innovative approach to designing heterostructure photodetectors that involved integrating a perovskite film with a plasmonic metasurface. Using finite-difference time-domain (FDTD) simulations, we investigated the formation of hybrid photonic–plasmonic modes and examined their quality factors in relation to loss mechanisms. Our results demonstrate that these hybrid modes facilitated strong light confinement within the perovskite layer, with significant intensity enhancement at the metal–perovskite interface—an ideal condition for efficient charge carrier generation. We also propose the use of low-bandgap perovskites for direct infrared passive detection and explore the potential of highly Stokes-shifted perovskites for active detection applications, including ultraviolet and X-ray radiation. Full article

The variable bandgap and high absorption coefficient of all-inorganic halide perovskite quantum dots (QDs), particularly CsPbBr₂I make them highly promising for photodetector applications. However, their high defect density and poor stability limit their performance. To overcome these problems, Mn²⁺-doped CsPbBr₂I QDs with varying concentrations were synthesized via the one-pot method in this work. By replacing Pb²⁺ ions, moderate Mn²⁺ doping caused lattice contraction and improved crystallinity. At the same time, Mn²⁺-doping effectively passivated surface defects, reducing the defect density by 33%, and suppressed non-radiative recombination, thereby improving photoluminescence (PL) intensity and carrier mobility. The optimized Mn:CsPbBr₂I QDs-based photodetector exhibited superior performance, with a dark current of 1.19 × 10⁻¹⁰ A, a photocurrent of 1.29 × 10⁻⁵ A, a responsivity (R) of 0.83 A/W, a specific detectivity (D*) of 3.91 × 10¹² Jones, an on/off ratio up to 10⁵, and the response time reduced to less than 10 ms, all outperforming undoped CsPbBr₂I QDs devices. Stability tests demonstrated enhanced durability, retaining 80% of the initial photocurrent after 200 s of cycling (compared to 50% for undoped devices) and stable operation over 20 days. This work offers a workable strategy for rational doping and structural optimization in the construction of high-performance perovskite optoelectronic devices. Full article